器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IPP086N10N3 | ISC | isc N-Channel MOSFET Transistor | 下载 |
IPP086N10N3G | Infineon(英飞凌) | 80 A, 100 V, 0.0086 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IPP086N10N3 G | Infineon(英飞凌) | mosFET N-kanal power mos | 下载 |
IPP086N10N3-G | Infineon(英飞凌) | Signal Conditioning 2.45GHz Balun Band Pass Filter | 下载 |
IPP086N10N3G_13 | Infineon(英飞凌) | N-channel, normal level | 下载 |
IPP086N10N3GHKSA1 | Infineon(英飞凌) | MOSFET N-Ch 100V 80A TO220-3 | 下载 |
IPP086N10N3GXKSA1 | Infineon(英飞凌) | MOSFET MV POWER MOS | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
IPP086N10N3-G 、 IPP086N10N3GHKSA1 、 IPP086N10N3GXKSA1 | 下载文档 |
IPP086N10N3G_13 | 下载文档 |
IPP086N10N3G | 下载文档 |
IPP086N10N3 G | 下载文档 |
型号 | IPP086N10N3GXKSA1 | IPP086N10N3-G | IPP086N10N3GHKSA1 |
---|---|---|---|
描述 | MOSFET MV POWER MOS | Signal Conditioning 2.45GHz Balun Band Pass Filter | MOSFET N-Ch 100V 80A TO220-3 |
产品种类 Product Category |
- | MOSFET | MOSFET |
制造商 Manufacturer |
- | Infineon(英飞凌) | Infineon(英飞凌) |
RoHS | - | Details | Details |
技术 Technology |
- | Si | Si |
安装风格 Mounting Style |
- | Through Hole | Through Hole |
封装 / 箱体 Package / Case |
- | TO-220-3 | TO-220-3 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds - Drain-Source Breakdown Voltage | - | 100 V | 100 V |
Id - Continuous Drain Current | - | 80 A | 80 A |
Rds On - Drain-Source Resistance | - | 8.2 mOhms | 8.2 mOhms |
Configuration | - | Single | Single |
系列 Packaging |
- | Tube | Tube |
高度 Height |
- | 15.65 mm | 15.65 mm |
长度 Length |
- | 10 mm | 10 mm |
工厂包装数量 Factory Pack Quantity |
- | 500 | 500 |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
宽度 Width |
- | 4.4 mm | 4.4 mm |
单位重量 Unit Weight |
- | 0.211644 oz | 0.211644 oz |
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