器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
HGTG30N60B3 | Fairchild | 600 V, N-CHANNEL IGBT, TO-247 | 下载 |
HGTG30N60B3 | Intersil ( Renesas ) | 600 V, N-CHANNEL IGBT, TO-247 | 下载 |
HGTG30N60B3 | ON Semiconductor(安森美) | IGBT Transistors 600V N-Channel IGBT UFS Series | 下载 |
HGTG30N60B3 | Harris | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3 | 下载 |
HGTG30N60B3 | Renesas(瑞萨电子) | 600V, N-CHANNEL IGBT, TO-247, PLASTIC PACKAGE-3 | 下载 |
HGTG30N60B3D | Fairchild | 600 V, N-CHANNEL IGBT, TO-247 | 下载 |
HGTG30N60B3D | Intersil ( Renesas ) | 600 V, N-CHANNEL IGBT, TO-247 | 下载 |
HGTG30N60B3D | ON Semiconductor(安森美) | IGBT Transistors 600V IGBT UFS N-Channel | 下载 |
HGTG30N60B3D | Rochester Electronics | 60A, 600V, N-CHANNEL IGBT, TO-247, TO-247, 3 PIN | 下载 |
HGTG30N60B3D | Harris | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247 | 下载 |
HGTG30N60B3D | Renesas(瑞萨电子) | 600V, N-CHANNEL IGBT, TO-247 | 下载 |
HGTG30N60B3D_04 | Fairchild | 600 V, N-CHANNEL IGBT, TO-247 | 下载 |
HGTG30N60B3D_NL | Fairchild | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | 下载 |
HGTG30N60B3D_Q | Fairchild | IGBT Transistors 600V IGBT UFS N-Channel | 下载 |
HGTG30N60B3_NL | Fairchild | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
HGTG30N60B3D 、 HGTG30N60B3D_04 | 下载文档 |
HGTG30N60B3 、 HGTG30N60B3D | 下载文档 |
HGTG30N60B3D | 下载文档 |
HGTG30N60B3D | 下载文档 |
HGTG30N60B3D_NL | 下载文档 |
HGTG30N60B3D_Q | 下载文档 |
HGTG30N60B3D | 下载文档 |
HGTG30N60B3D | 下载文档 |
HGTG30N60B3 | 下载文档 |
HGTG30N60B3 | 下载文档 |
型号 | HGTG30N60B3 | HGTG30N60B3D |
---|---|---|
描述 | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3 | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247 |
是否Rohs认证 | 不符合 | 不符合 |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown | unknown |
最大集电极电流 (IC) | 60 A | 60 A |
集电极-发射极最大电压 | 600 V | 600 V |
配置 | SINGLE | SINGLE WITH BUILT-IN DIODE |
最大降落时间(tf) | 150 ns | 250 ns |
门极发射器阈值电压最大值 | 6 V | 6 V |
门极-发射极最大电压 | 20 V | 20 V |
JEDEC-95代码 | TO-247 | TO-247 |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 |
JESD-609代码 | e0 | e0 |
元件数量 | 1 | 1 |
端子数量 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 208 W | 208 W |
认证状态 | Not Qualified | Not Qualified |
表面贴装 | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE |
晶体管元件材料 | SILICON | SILICON |
Base Number Matches | 1 | 1 |
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