器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
FCP190N65S3R0 | ON Semiconductor(安森美) | MOSFET SUPERFET3 650V TO220 PKG | 下载 |
MOSFET SUPERFET3 650V TO220 PKG
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ON Semiconductor(安森美) |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-220-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 17 A |
Rds On - Drain-Source Resistance | 190 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Vgs - Gate-Source Voltage | 30 V |
Qg - Gate Charge | 33 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd-功率耗散 Pd - Power Dissipation | 144 W |
Channel Mode | Enhancement |
系列 Packaging | Tube |
Transistor Type | 1 N-Channel SuperFET III MOSFET |
Fall Time | 6 ns |
Rise Time | 16 ns |
工厂包装数量 Factory Pack Quantity | 800 |
Typical Turn-Off Delay Time | 42 ns |
Typical Turn-On Delay Time | 17 ns |
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