器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
EL7104CN | ELANTEC (Renesas ) | 4 A BUF OR INV BASED MOSFET DRIVER, PDIP8 | 下载 |
EL7104CN | Intersil ( Renesas ) | Gate Drivers SINGLE MSFT DRVR | 下载 |
EL7104CN | Renesas(瑞萨电子) | Buffer/Inverter Based MOSFET Driver | 下载 |
EL7104CNZ | Intersil ( Renesas ) | 4 A BUF OR INV BASED MOSFET DRIVER, PDIP8 | 下载 |
EL7104CNZ | Renesas(瑞萨电子) | High Speed, Single Channel, Power MOSFET Driver; PDIP8, SOIC8; Temp Range: -40° to 85°C | 下载 |
型号 | EL7104CNZ | EL7104CN | EL7104CNZ |
---|---|---|---|
描述 | High Speed, Single Channel, Power MOSFET Driver; PDIP8, SOIC8; Temp Range: -40° to 85°C | Buffer/Inverter Based MOSFET Driver | 4 A BUF OR INV BASED MOSFET DRIVER, PDIP8 |
功能数量 | 1 | 1 | 1 |
端子数量 | 8 | 8 | 8 |
温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | DUAL | DUAL | DUAL |
厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | - |
包装说明 | DIP, DIP8,.3 | DIP, | - |
Reach Compliance Code | compliant | unknown | - |
ECCN代码 | EAR99 | EAR99 | - |
高边驱动器 | YES | NO | - |
接口集成电路类型 | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | - |
JESD-30 代码 | R-PDIP-T8 | R-PDIP-T8 | - |
长度 | 9.525 mm | 9.525 mm | - |
最高工作温度 | 85 °C | 85 °C | - |
最低工作温度 | -40 °C | -40 °C | - |
标称输出峰值电流 | 4 A | 4 A | - |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
封装代码 | DIP | DIP | - |
封装形状 | RECTANGULAR | RECTANGULAR | - |
封装形式 | IN-LINE | IN-LINE | - |
峰值回流温度(摄氏度) | NOT APPLICABLE | NOT SPECIFIED | - |
座面最大高度 | 5.334 mm | 5.334 mm | - |
最大供电电压 | 16 V | 16 V | - |
最小供电电压 | 4.5 V | 4.5 V | - |
标称供电电压 | 15 V | 15 V | - |
表面贴装 | NO | NO | - |
端子节距 | 2.54 mm | 2.54 mm | - |
处于峰值回流温度下的最长时间 | NOT APPLICABLE | NOT SPECIFIED | - |
断开时间 | 0.025 µs | 25 µs | - |
接通时间 | 0.025 µs | 25 µs | - |
宽度 | 7.62 mm | 7.62 mm | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved