器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
DMN6075S | Diodes | N-CHANNEL ENHANCEMENT MODE MOSFET | 下载 |
DMN6075S-13 | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF | 下载 |
DMN6075S-13 | Diodes | N-CHANNEL ENHANCEMENT MODE MOSFET | 下载 |
DMN6075S_15 | Diodes | 60V N-CHANNEL ENHANCEMENT MODE MOSFET | 下载 |
DMN6075S_17 | Diodes | N-CHANNEL ENHANCEMENT MODE MOSFET | 下载 |
DMN6075S-7 | Diodes | 漏源电压(Vdss):60V 连续漏极电流(Id)(25°C 时):2A 栅源极阈值电压:3V @ 250uA 漏源导通电阻:85mΩ @ 3.2A,10V 最大功率耗散(Ta=25°C):800mW 类型:N沟道 N沟道,60V,2A,85mΩ@10V | 下载 |
MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Diodes Incorporated |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SOT-23-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 2.5 A |
Rds On - Drain-Source Resistance | 120 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1 V, 1 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 12.3 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd-功率耗散 Pd - Power Dissipation | 1.15 W |
Channel Mode | Enhancement |
系列 Packaging | Cut Tape |
系列 Packaging | MouseReel |
系列 Packaging | Reel |
高度 Height | 1 mm |
长度 Length | 3 mm |
产品 Product | Enhancement Mode MOSFET |
Transistor Type | 1 N-Channel |
类型 Type | Enhancement Mode MOSFET |
宽度 Width | 1.4 mm |
Fall Time | 11 ns |
Rise Time | 4.1 ns |
工厂包装数量 Factory Pack Quantity | 10000 |
Typical Turn-Off Delay Time | 35 ns |
Typical Turn-On Delay Time | 3.5 ns |
单位重量 Unit Weight | 0.000282 oz |
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