器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
2SJ255 | SANYO | Power Field-Effect Transistor, 10A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN | 下载 |
2SJ255-RA | SANYO | Power Field-Effect Transistor, 10A I(D), 30V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
2SJ255-RB | SANYO | Power Field-Effect Transistor, 10A I(D), 30V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
2SJ255-YA | SANYO | Power Field-Effect Transistor, 10A I(D), 30V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
2SJ255-YB | SANYO | Power Field-Effect Transistor, 10A I(D), 30V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
型号 | 2SJ255-YB | 2SJ255-RA | 2SJ255-RB | 2SJ255-YA |
---|---|---|---|---|
描述 | Power Field-Effect Transistor, 10A I(D), 30V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 10A I(D), 30V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 10A I(D), 30V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 10A I(D), 30V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
Objectid | 1412362691 | 1412362683 | 1412362686 | 1412362688 |
零件包装代码 | SFM | SFM | SFM | SFM |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
配置 | SINGLE | SINGLE | SINGLE | SINGLE |
最小漏源击穿电压 | 30 V | 30 V | 30 V | 30 V |
最大漏极电流 (ID) | 10 A | 10 A | 10 A | 10 A |
最大漏源导通电阻 | 0.095 Ω | 0.095 Ω | 0.095 Ω | 0.095 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
功耗环境最大值 | 25 W | 25 W | 25 W | 25 W |
最大脉冲漏极电流 (IDM) | 40 A | 40 A | 40 A | 40 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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