器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
2SK2685 | Hitachi (Renesas ) | GaAs HEMT | 下载 |
2SK2685 | Renesas(瑞萨电子) | TRANSISTOR,HEMT,N-CHAN,6V V(BR)DSS,35MA I(DSS),SOT-343R | 下载 |
2SK2685ZT | Hitachi (Renesas ) | RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel, CMPAK-4 | 下载 |
2SK2685ZT-TL | Hitachi (Renesas ) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CMPAK-4 | 下载 |
2SK2685ZT-TR | Hitachi (Renesas ) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CMPAK-4 | 下载 |
2SK2685ZT-UL | Hitachi (Renesas ) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CMPAK-4 | 下载 |
2SK2685ZT-UR | Hitachi (Renesas ) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CMPAK-4 | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
2SK2685ZT-TL 、 2SK2685ZT-TR 、 2SK2685ZT-UL 、 2SK2685ZT-UR | 下载文档 |
2SK2685ZT | 下载文档 |
2SK2685 | 下载文档 |
2SK2685 | 下载文档 |
型号 | 2SK2685ZT-UR | 2SK2685ZT-TL | 2SK2685ZT-TR | 2SK2685ZT-UL |
---|---|---|---|---|
描述 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CMPAK-4 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CMPAK-4 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CMPAK-4 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CMPAK-4 |
包装说明 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
针数 | 4 | 4 | 4 | 4 |
Reach Compliance Code | unknow | unknow | unknow | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
外壳连接 | SOURCE | SOURCE | SOURCE | SOURCE |
配置 | SINGLE | SINGLE | SINGLE | SINGLE |
最小漏源击穿电压 | 6 V | 6 V | 6 V | 6 V |
最大漏极电流 (ID) | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
FET 技术 | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY |
最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 4 | 4 | 4 | 4 |
工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最小功率增益 (Gp) | 16 dB | 16 dB | 16 dB | 16 dB |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
Base Number Matches | 1 | 1 | 1 | 1 |
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