器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
2SD2375 | Panasonic(松下) | Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) | 下载 |
2SD23750P | Panasonic(松下) | TRANS NPN 60V 3A TO-220D | 下载 |
2SD2375A | Panasonic(松下) | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220D, 3 PIN | 下载 |
2SD2375P | Panasonic(松下) | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220D-A1, 3 PIN | 下载 |
2SD2375PQ | Panasonic(松下) | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220D, FULL PACK-3 | 下载 |
2SD2375Q | Panasonic(松下) | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220D-A1, 3 PIN | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
2SD2375P 、 2SD2375Q | 下载文档 |
2SD2375PQ | 下载文档 |
2SD2375A | 下载文档 |
2SD23750P | 下载文档 |
2SD2375 | 下载文档 |
型号 | 2SD2375Q | 2SD2375P |
---|---|---|
描述 | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220D-A1, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220D-A1, 3 PIN |
是否Rohs认证 | 符合 | 符合 |
零件包装代码 | TO-220AB | TO-220AB |
包装说明 | TO-220D-A1, 3 PIN | TO-220D-A1, 3 PIN |
针数 | 3 | 3 |
Reach Compliance Code | unknow | unknow |
ECCN代码 | EAR99 | EAR99 |
外壳连接 | ISOLATED | ISOLATED |
最大集电极电流 (IC) | 3 A | 3 A |
集电极-发射极最大电压 | 60 V | 60 V |
配置 | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 500 | 800 |
JEDEC-95代码 | TO-220AB | TO-220AB |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 |
端子数量 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | NPN | NPN |
最大功率耗散 (Abs) | 25 W | 25 W |
认证状态 | Not Qualified | Not Qualified |
表面贴装 | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON |
标称过渡频率 (fT) | 50 MHz | 50 MHz |
Base Number Matches | 1 | 1 |
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