器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
2SC4669 | SHINDENGEN | Switching Power Transistor(10A NPN) | 下载 |
2SC4669-4061 | SHINDENGEN | Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, EPACK-3 | 下载 |
2SC4669-4071 | SHINDENGEN | Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, EPACK-3 | 下载 |
2SC4669-4101 | SHINDENGEN | Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
2SC4669-4101 、 2SC4669-4101 | 下载文档 |
2SC4669-4061 、 2SC4669-4071 | 下载文档 |
2SC4669 | 下载文档 |
型号 | 2SC4669-4061 | 2SC4669-4071 |
---|---|---|
描述 | Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, EPACK-3 | Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, EPACK-3 |
包装说明 | EPACK-3 | EPACK-3 |
针数 | 3 | 3 |
Reach Compliance Code | unknow | unknow |
ECCN代码 | EAR99 | EAR99 |
外壳连接 | COLLECTOR | COLLECTOR |
最大集电极电流 (IC) | 10 A | 10 A |
集电极-发射极最大电压 | 40 V | 40 V |
配置 | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 70 | 70 |
JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 |
元件数量 | 1 | 1 |
端子数量 | 2 | 2 |
最高工作温度 | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | NPN | NPN |
认证状态 | Not Qualified | Not Qualified |
表面贴装 | YES | YES |
端子形式 | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE |
晶体管元件材料 | SILICON | SILICON |
标称过渡频率 (fT) | 50 MHz | 50 MHz |
Base Number Matches | 1 | 1 |
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