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UNR5118G0L

器件型号:UNR5118G0L
器件类别:半导体    分立半导体   
厂商名称:Panasonic
厂商官网:http://www.panasonic.co.jp/semicon/e-index.html
标准:
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器件描述

TRANS PREBIAS PNP 150MW SMINI3

参数
参数名称属性值
晶体管类型PNP - 预偏压
电流 - 集电极(Ic)(最大值)100mA
电压 - 集射极击穿(最大值)50V
电阻器 - 基底(R1)510 Ohms
电阻器 - 发射极基底(R2)5.1 kOhms
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)20 @ 5mA,10V
不同 Ib,Ic 时的 Vce 饱和值(最大值)250mV @ 300µA,10mA
电流 - 集电极截止(最大值)500nA
频率 - 跃迁80MHz
功率 - 最大值150mW
安装类型表面贴装
封装/外壳SC-85
供应商器件封装S迷你型3-F2

文档预览

This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR511xG Series
Silicon PNP epitaxial planar type
For digital circuits
Features
Package
Resistance by Part Number
UNR5110G
UNR5111G
UNR5112G
UNR5113G
UNR5114G
UNR5115G
UNR5116G
UNR5117G
UNR5118G
UNR5119G
UNR511DG
UNR511EG
UNR511FG
UNR511HG
UNR511LG
UNR511MG
UNR511NG
UNR511TG
UNR511VG
UNR511ZG
Ma
int
en
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
an
ce
Marking symbol
6L
6A
6B
6C
6D
6E
6F
6H
6I
6K
6M
6N
6O
6P
6Q
EI
EW
EY
FC
FE
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.
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
M
ain
Di
sc te
on na
tin nc
ue e/
d
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through the tape/
magazine packing
Code
SMini3-F2
Pin Name
1: Base
2: Emitter
3: Collector
R
1
B
R
2
Internal Connection
C
E
/D
isc
on
tin
ue
Rating
−50
−50
150
150
Unit
V
V
−100
mA
°C
°C
mW
−55
to
+150
Publication date: July 2007
SJH00196AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR511xG Series
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR5110G/5115G/5116G/5117G
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
−50
−50
0.1
0.5
0.01
0.1
0.2
0.4
0.5
−1.0
−1.5
20
Typ
Max
Unit
V
V
µA
µA
mA
UNR511FG/511HG
UNR5119G
UNR5118G/511LG/511VG
Forward current UNR511VG
transfer ratio
h
FE
UNR5118G/511LG
UNR5119G/511DG/511FG/511HG
UNR5111G
UNR5112/511EG
UNR511ZG
UNR5113/5114/511MG
UNR511N/511TG
UNR5110G
5116G
*
/5117G
*
*
/5115G
*
/
Collector-emitter saturation voltage
UNR511VG
V
CE(sat)
V
OH
V
OL
ue
Output voltage high-level
Output voltage low-level
isc
UNR5113G
/D
UNR511DG
UNR511EG
Transition frequency
Input
resistance
f
T
UNR5118G
UNR5119G
R
1
UNR511HG/511MG/511VG
UNR5116G/511FG/511LG
511NG/511ZG
UNR5111G/5114G/5115G
UNR5112G/5117G/511TG
UNR5110G/5113G/511DG/511EG
Resistance
ratio
UNR511MG
UNR511NG
UNR5118G/5119G
UNR511ZG
R
1
/R
2
0.08
2
d
pla inc
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cy
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.
−2.0
V
CE
=
−10
V, I
C
=
−5
mA
6
20
30
35
60
60
200
80
80
400
160
460
I
C
= −10
mA, I
B
= −
0.3 mA
0.25
V
I
C
= −10
mA, I
B
= −1.5
mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
−4.9
V
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −10
V, R
L
=
1 kΩ
0.2
V
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −6
V, R
L
=
1 kΩ
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
80
MHz
kΩ
−30%
0.51
1.0
+30%
2.2
4.7
10
22
47
0.047
0.1
0.10
0.21
0.12
SJH00196AED
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
cutoff current UNR5113G
(Collector open) UNR5112G/5114G/511DG/
511EG/511MG/511NG/511TG
UNR511ZG
UNR5111G
on
tin
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR511xG Series
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Resistance
ratio
UNR5114G
UNR511HG
UNR511TG
UNR511FG
UNR511VG
UNR5111G/5112G/5113G/511LG
UNR511EG
0.8
0.37
Symbol
Conditions
Min
0.17
0.17
Typ
0.21
0.22
0.47
0.47
1.0
1.0
2.14
4.7
1.2
2.60
5.7
0.57
Max
0.25
0.27
Unit
Rank
h
FE
Q
160 to 260
210 to 340
Common characteristics chart
P
T
T
a
250
200
150
100
50
0
−10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
T
a
=
25°C
I
B
= −1.0
mA
0.9 mA
−100
0.8 mA
0.7 mA
0.6 mA
0.5 mA
−80
0.4 mA
0.3 mA
−60
0.2 mA
0.1 mA
−20
Collector-emitter saturation voltage V
CE(sat)
(V)
−120
Ma
int
en
I
C
V
CE
an
Characteristics charts of UNR5110G
ce
/D
isc
Ambient temperature T
a
(
°C
)
on
0
40
80
120
160
−100
−40
0.1
−25°C
0
0
−2
−4
−6
−8
−10
−12
0.01
−0.1
Collector-emitter voltage V
CE
(V)
d
pla inc
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cy
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.
R
S
No-rank
290 to 460
160 to 460
M
ain
Di
sc te
on na
tin nc
ue e/
d
1.70
3.7
UNR511DG
Total power dissipation P
T
(mW)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
tin
ue
V
CE(sat)
I
C
h
FE
I
C
I
C
/ I
B
=
10
400
V
CE
=
–10 V
300
T
a
=
75°C
−1
T
a
=
75°C
25°C
200
25°C
−25°C
100
−1
−10
−100
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00196AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR511xG Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
4
I
O
V
IN
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
0
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Characteristics charts of UNR5111G
I
C
V
CE
I
B
= −1.0
mA
−160
T
a
=
25°C
0.9 mA
Collector current I
C
(mA)
−120
0.8 mA
0.7 mA
0.6 mA
−80
0.5 mA
0.4 mA
0.3 mA
−40
0.2 mA
ue
0.1 mA
−10
0
tin
0
−2
−4
−6
−8
−12
0.01
0.1
ce
C
ob
V
CB
/D
isc
on
Collector-emitter voltage V
CE
(V)
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
5
Ma
int
en
f
=
1 MHz
I
E
=
0
T
a
=
25°C
4
Output current I
O
(
µA
)
Input voltage V
IN
(V)
3
2
1
0.01
0.1
0
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
4
d
pla inc
Pl
ea
ne lud
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pla m d m es
ne ain ain foll
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d d te te ow
p:/ fo
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co L a d t ty
du
n.p bo yp pe
ct
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life
an ut
d
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cy
on es
cle
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sta
co fo
ge
.jp rm
.
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.
−1
0.4
0.6
0.8
−1.0
−1.2
−1.4
0.01
0.1
−1
−10
M
ain
Di
sc te
on na
tin nc
ue e/
d
2
−10
0.1
1
−100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
160
V
CE
= −10
V
T
a
=
75°C
Forward current transfer ratio h
FE
25°C
−10
120
−25°C
−1
80
25°C
T
a
=
75°C
0.1
40
−25°C
−1
−10
−100
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
an
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
O
= −
0.2 V
T
a
=
25°C
−10
3
−10
−10
2
−1
−10
0.1
−1
0.4
0.6
0.8
−1.0
−1.2
−1.4
−1
−10
−100
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00196AED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR511xG Series
Characteristics charts of UNR5112G
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
−80
0.4 mA
0.3 mA
0.2 mA
0.1 mA
T
a
=
25°C
−100
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
M
ain
Di
sc te
on na
tin nc
ue e/
d
200
−1
T
a
= 75°C
25°C
−25°C
25°C
T
a
= 75°C
−40
0.1
100
−25°C
0
0
−2
−4
−6
−8
−10
−12
Collector-emitter voltage V
CE
(V)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
4
3
2
1
−1
−10
−100
ue
0
0.1
Collector-base voltage V
CB
(V)
I
B
= −1.0
mA
T
a
=
25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
Ma
int
en
an
I
C
V
CE
ce
Characteristics charts of UNR5113G
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
−80
0.4 mA
0.3 mA
−40
0.2 mA
0.1 mA
0
0
−2
−4
−6
−8
−10
−12
Collector-emitter voltage V
CE
(V)
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
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ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0.01
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
−10
4
V
O
=
−5
V
T
a
= 25°C
−100
V
O
= −
0.2 V
T
a
= 25°C
Output current I
O
(µA)
Input voltage V
IN
(V)
−10
3
−10
−10
2
−1
−10
0.1
−1
0.4
0.6
0.8
−1.0
−1.2
−1.4
0.01
0.1
−1
−10
−100
tin
Input voltage V
IN
(V)
/D
isc
on
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
−100
I
C
/ I
B
=
10
400
V
CE
= −10
V
T
a
=
75°C
−10
300
25°C
−1
T
a
=
75°C
200
−25°C
25°C
0.1
−25°C
100
0.01
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00196AED
5
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