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TISP4070L3

器件型号:TISP4070L3
器件类别:模拟混合信号IC    触发装置   
厂商名称:Bourns
厂商官网:http://www.bourns.com
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器件描述

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

参数
厂商名称Bourns
零件包装代码DO-92
包装说明CYLINDRICAL, O-PBCY-T2
针数2
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性UL RECOGNIZED
最大转折电压70 V
配置SINGLE
最大断态直流电压58 V
JEDEC-95代码DO-92
JESD-30 代码O-PBCY-T2
通态非重复峰值电流18 A
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置BOTTOM
触发设备类型SILICON SURGE PROTECTOR

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oH
V SC
AV ER OM
AI SIO PL
LA N IA
BL S NT
E
TISP4070L3LM, TISP4350L3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP4xx0L3LM Overvoltage Protector Series
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Device
‘4070
‘4350
V
DRM
V
58
275
V
(BO)
V
70
350
LM Package (Top View)
T(A)
NC
R(B)
1
2
3
MD4XATA
NC - No internal connection on pin 2
Ring-Tip Protection ............................................ TISP4350L3LM
Electronics Protection ....................................... TISP4070L3LM
Rated for UL 1950, ITU-T and TIA/EIA-IS-968
Surge
Type
A
B
Wave
Shape
10/160
10/560
9/720
10/700
I
TSP
A
50
30
40
Device Symbol
T
Standard
TIA/EIA-IS-968
(formerly FCC Part 68)
TIA/EIA-IS-968
UL 1950/ ITU-T K.21
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities.
After a Type A surge (200 A, 10/160, and 100 A, 10/560) the equipment is allowed to be non-operational or operational. For an operational
pass, series resistance must be added to reduce the Type A currents to within the TISP4xxxL3LM ratings (50 A, 10/160 and 30 A, 10/560).
Alternatively, a series fuse with an I
2
t greater than 0.45 A
2
s and less than 5.6 A
2
s could be used to give a non-operational pass. After a Type B
surge the equipment must be operational. As the TISP4xxxL3LM has a current rating of 40 A, will survive both Type B surges, metallic (25 A,
9/720) and longitudinal (37.5 A, 9/720), giving an operational pass to Type B surges.
For metallic protection, the TISP4350L3LM is connected between the Ring and Tip conductors. For longitudinal protection two TISP4350L3LM
protectors are used; one between the Ring conductor to ground and the other between the Tip conductor to ground. The FCC Part 68 B type
ringer has voltages of 56.5 V d.c. and up to 150 V rms a.c., giving a peak voltage of 269 V. The TISP4350L3LM will not clip the B type ringing
voltage as it has a high impedance up to 275 V.
The TISP4070L3LM should be connected after the hook switch to protect the following electronics. As the TISP4070L3LM has a high
impedance up to 58 V, it will switch off after a surge and not be triggered by the normal exchange battery voltage.
How To Order
For Standard
Termination Finish
Order As
TISP4070L3LM
TISP4350L3LM
Device
TISP4070L3
TISP4350L3
Package Type
LM (Straight Lead DO-92)
LM (Straight Lead DO-92)
Carrier
Bulk Pack
Bulk Pack
Quantity
2 000
2 000
For Lead Free
Termination Finish
Order As
TISP4070L3LM-S
TISP4350L3LM-S
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0L3LM Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/160 (TIA/EIA-IS-968 (formerly FCC Part 68), 10/160
µs
voltage wave shape)
5/310 (ITU-T K.21, 10/700 voltage wave shape)
5/320 (TIA/EIA-IS-968 (formerly FCC Part 68), 9/720
µs
voltage wave shape)
10/560 (TIA/EIA-IS-968 (formerly FCC Part 68), 10/560
µs
voltage wave shape)
Non-repetitive peak on-state current (see Notes 2 and 3)
50/60 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
I
TSP
‘4070
‘4350
Symbol
V
DRM
Value
±
58
±
275
50
40
40
30
4
250
-40 to +150
-65 to +150
Unit
V
A
I
TSM
di
T
/dt
T
J
T
stg
A
A/µs
°C
°C
NOTES: 1. Initially, the TISP4xxxL3LM must be in thermal equilibrium with T
J
= 25
°C
2. The surge may be repeated after the TISP4xxxL3LM returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25
°C.
Electrical Characteristics, TA = 25
°C
(Unless Otherwise Noted)
Parameter
I
DRM
V
(BO)
Repetitive peak off-
state current
Breakover voltage
V
D
= V
DRM
dv/dt =
±250
V/ms, R
SOURCE
= 300
dv/dt =
±1000
V/µs, Linear voltage ramp,
Maximum ramp value =
±500
V
di/dt =
±20
A/µs, Linear current ramp,
Maximum ramp value =
±10
A
dv/dt =
±250
V/ms, R
SOURCE
= 300
I
T
=
±5
A, t
W
= 100
µs
I
T
=
±5
A, di/dt = - /+ 30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85 V
DRM
V
D
=
±50
V
f = 100 kHz, V
d
= 1 V rms, V
D
= 0,
V
D
= 1 V,
V
D
= 5 V
rms, V
D
= 0,
f = 100 kHz, V
d
= 1 V
V
D
= 1 V,
V
D
= 5 V
T
A
= 85
°C
‘4070
40
38
31
26
24
20
Test Conditions
T
A
= 25
°C
T
A
= 85
°C
‘4070
‘4350
Min
Typ
Max
±5
±10
±70
±350
Unit
µA
V
V
(BO)
Breakover voltage
'4070
'4350
±40
±120
±5
±78
±359
±250
±3
±350
V
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
mA
V
mA
kV/µs
±10
50
48
39
33
30
25
µA
C
off
Off-state capacitance
‘4350
pF
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0L3LM Overvoltage Protector Series
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
°C,
(see Note 4)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25
°C
57
Min
Typ
Max
120
°C/W
Unit
R
Θ
JA
Junction to free air thermal resistance
NOTE 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0L3LM Overvoltage Protector Series
Parameter Measurement Information
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
V
(BO)
I
H
I
DRM
I
(BO)
-v
V
DRM
I
DRM
V
D
I
D
I
D
V
D
V
DRM
+v
I
(BO)
V
(BO)
I
H
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAJA
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0L3LM Overvoltage Protector Series
MECHANICAL DATA
Device Symbolization Code
Devices will be coded as below.
Symbolization
Code
4070L3
4350L3
Device
TISP4070L3
TISP4350L3
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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