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TISP4070J1

器件型号:TISP4070J1
厂商名称:Bourns
厂商官网:http://www.bourns.com
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器件描述

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

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oH
S
CO
M
PL
IA
TISP4070J1BJ THRU TISP4395J1BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
NT
TISP4xxxJ1BJ Overvoltage Protector Series
Ground Return Element of Y Configuration
-2x Current Capability of Y Upper Elements
-Available in a Wide Range of Voltages
-Enables Symmetrical and Asymmetrical Y Designs
-SMB (DO-214AA) Package
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
-Low Voltage Overshoot Under Surge
Device
TISP4070J1
TISP4080J1
TISP4095J1
TISP4115J1
TISP4125J1
TISP4145J1
TISP4165J1
TISP4180J1
TISP4200J1
TISP4219J1
TISP4250J1
TISP4290J1
TISP4350J1
TISP4395J1
V
DRM
V
58
65
75
90
100
120
135
145
155
180
190
220
275
320
V
(BO)
V
70
80
95
115
125
145
165
180
200
219
250
290
350
395
2/10
8/20
10/160
10/700
10/560
GR-1089-CORE
IEC 61000-4-5
TIA/EIA-IS-968 (FCC Part 68)
ITU-T K.20/21/45
TIA/EIA-IS-968 (FCC Part 68)
GR-1089-CORE
SMB Package (Top View)
MT1
1
2
MT2
MD4JAA
Device Symbol
MT2
MT1
SD4JAA
Rated for International Surge Wave Shapes
Wave Shape
Standard
I
PPSM
A
1000
800
400
350
250
200
............................................ UL Recognized Components
10/1000
Description
The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element
of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example,
the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using
the TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the
TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the
Applications Information section. These SMB package combinations are often more space efficient than single package Y protection
multi-chip integrations.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, V
DRM
, see Figure 1. Voltages above V
DRM
are
limited and will not exceed the breakover voltage, V
(BO)
, level. If sufficient current flows due to the overvoltage, the device switches into a low-
voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, I
H
, level the devices switches off and restores normal system operation.
How to Order
Device
TISP4xxxJ1BJ
Package
BJ (SMB/DO-214AA J-Bend)
Carrier
R (Embossed Tape Reeled)
Order As
TISP4xxxJ1BJR-S
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
Rating
’4070
’4080
’4095
’4115
’4125
’4145
Repetitive peak off-state voltage
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 volt age wave shape)
10/160 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
5/310 (ITU-T K.20/21, 10/700 volt age wave shape, single)
5/320 (TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 voltage wave shape, single)
10/560 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current (see Notes 1 and 2)
50 Hz, 1 cycle
60 Hz, 1 cycle
Initial rate of rise of on-s tate current,
Junction temperature
Storage temperature range
Linear current ramp, Maximum ramp value < 50 A
di
T
/dt
T
J
T
stg
I
TSM
80
100
800
-40 to +150
-65 to +150
A/µs
°C
°C
A
I
PPSM
1000
800
400
370
350
350
250
200
A
V
DRM
Symbol
Value
±58
±65
±75
±90
±100
±120
±135
±145
±155
±180
±190
±220
±275
±320
V
Unit
NOTES: 1. Initially, the device must be in thermal equilibrium with T
J
= 25
°C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Recommended Operating Conditions
Component
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for ITU-T recommendation K. 20/K.45/K.21 (Basic coordi nation with 400 V GDT)
R1, R2 Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 survival
Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 survival
Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 survival
Min
0
6.5
0
0
0
Typ
Max
Unit
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
I
DRM
Repetitive peak off-
state current
V
D
=
±V
DRM
Test Conditions
T
A
= 25
°C
T
A
= 85
°C
4070
’4080
’4095
’4115
’4125
’4145
V
(BO)
AC breakover voltage
dv/dt =
±250
V/ms, R
SOURCE
= 300
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
4070
’4080
’4095
’4115
’4125
dv/dt
≤±1000
V/µs, Linear voltage ramp,
V
(BO)
Ramp breakover
voltage
Maximum ramp value =
±500
V
di/dt =
±20
A/µs, Linear current ramp,
Maximum ramp value =
±10
A
’4145
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
4070
’4080
’4095
’4115
’4125
’4145
V
(BO)
Impulse breakover
voltage
2/10 wave shape, I
PP
=
±1000
A, R
S
= 2.5
Ω,
(see Note 3)
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
±96
±101
±112
±130
±140
±161
±183
±199
±221
±242
±276
±320
±386
±434
V
Min
Typ
Max
±5
±10
±70
±80
±95
±115
±125
±145
±165
±180
±200
±219
±250
±290
±350
±395
±77
±88
±104
±125
±135
±156
±177
±192
±212
±231
±263
±303
±364
±409
V
V
Unit
µA
NOTE 3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency
noise.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted) (Continued)
Parameter
I
(BO)
I
H
dv/dt
I
D
Breakover current
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Test Conditions
dv/dt =
±250
V/ms, R
SOURCE
= 300
I
T
=
±5
A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85 V
DRM
V
D
=
±50
V
f = 1 MHz, Vd = 1 V rms, V
D
= 0,
T
A
= 85
°C
‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
f = 1 MHz, Vd = 1 V rms, V
D
= -1 V
‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
C
off
Off-state capacitance
f = 1 MHz, Vd = 1 V rms, V
D
= -2 V
‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
f = 1 MHz, Vd = 1 V rms, V
D
= -50 V
‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
f = 1 MHz, Vd = 1 V rms, V
D
= -100 V
(see Note 4)
NOTE 4: To avoid possible voltage clipping, the ‘4125 is tested with V
D
= -98 V
‘4125 thru ‘4219
‘4250 thru ‘4395
195
120
105
180
110
95
165
100
90
85
50
42
40
35
±20
±5
±10
235
145
125
215
132
115
200
120
105
100
60
50
50
40
pF
Min
Typ
Max
±600
Unit
mA
mA
kV/µs
µA
Thermal Characteristics
Parameter
R
θJA
Junction to free air thermal resistance
Test Condit ions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
°C,
(see Note 5)
Min
Typ
Max
90
Unit
°C/W
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Parameter Measurement Information
+i
I
PPSM
Quadrant I
Switching
Characteristic
I
TSM
V
(BO)
I
H
I
(BO)
-v
I
DRM
V
DRM
V
D
I
D
I
D
V
D
V
DRM
I
DRM
+v
I
(BO)
V
(BO)
I
H
I
TSM
Quadrant III
Switching
Characteristic
I
PPSM
-i
PM4XAF
Figure 1. Voltage-Current Characteristic for Terminals 1-2
All Measurements are Referenced to Terminal 2
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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