电子工程世界电子工程世界电子工程世界

产品描述

搜索
 

TISP3070T3

器件型号:TISP3070T3
厂商名称:Bourns
厂商官网:http://www.bourns.com
下载文档

器件描述

Overvoltage Protector Series

文档预览

oH
VE S CO
AV R M
AI SIO PL
LA N IA
BL S NT
E
TISP3070T3BJ THRU TISP3395T3BJ
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP3xxxT3BJ Overvoltage Protector Series
Dual High Current Protectors in a Space Efficient
Package
- 2 x 100 A 10/560 Current Rating
- Modified 3-pin SMB (DO-214AA) Package
50 % Space Saving over Two SMBs
- Y Configurations with Two SMB Packages
2 x 80 A, 10/1000 . . . .TISP3xxxT3BJ + TISP4xxxJ1BJ
2 x 100 A, 10/700 . . . .TISP3xxxT3BJ + TISP4xxxH3BJ
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
Device
TISP3070T3
TISP3080T3
TISP3095T3
TISP3115T3
TISP3125T3
TISP3145T3
TISP3165T3
TISP3180T3
TISP3200T3
TISP3219T3
TISP3250T3
TISP3290T3
TISP3350T3
TISP3395T3
V
DRM
V
58
65
75
90
100
120
135
145
155
180
190
220
275
320
V
(BO)
V
70
80
95
115
125
145
165
180
200
219
250
290
350
395
2
(G)
SD3TA A
SMB Package (Top View)
1
2
3
MDXXCJA
Device Symbol
1
(T or R)
3
(T or R)
Rated for International Surge Wave Shapes
Wave Shape
2/10
8/20
10/160
10/700
10/560
Standard
GR-1089-CORE
IEC 61000-4-5
TIA/EIA-IS-968 (FCC Part 68)
ITU-T K.20/.21/.45
TIA/EIA-IS-968 (FCC Part 68)
GR-1089-CORE
I
PPSM
A
250
250
150
120
100
80
.......................................UL Recognized Component
10/1000
Description
These dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages on the
telecom line. The TISP3xxxT3BJ is available in a wide range of voltages and has an 80 A 10/1000 current rating. These protectors have
been specified mindful of the following standards and recommendations: GR-1089-CORE, TIA/EIA-IS-968, UL 60950, EN 60950, IEC
60950, ITU-T K.20, K.21 and K.45. The TISP3350T3BJ meets the FCC Part 68 “B” ringer voltage requirement (V
DRM
= ±275 V). Housed
in a 3-pin modified SMB (DO-214AA) package, the TISP3xxxT3BJ range is space efficient solution for protection designs of 80 A or less
which use multiple SMBs.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, V
DRM
, see Figure 1. Voltages above
V
DRM
are limited and will not exceed the breakover voltage, V
(BO)
, level. If sufficient current flows due to the overvoltage, the device
switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted cur-
rent falls below the holding current, I
H
, level the device switches off and restores normal system operation.
How To Order
For Standard
Termination Finish
Order As
TISP3xxxT3BJR
Device
TISP3xxxT3BJ
Package
BJ (3-pin modified SMB/DO-214AA J-Bend)
Carrier
R (Embossed Tape Reeled)
For Lead Free
Termination Finish
Order As
TISP3xxxT3BJR-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
’3070
’3080
’3095
’3115
’3125
’3145
Repetitive peak off-state voltage, (terminals 1-2 and 3-2)
’3165
’3180
’3200
’3219
’3250
’3290
’3350
’3395
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
8/20 (IEC 61000-4-5, combinat ion wave generator, 1.2/50 voltage wave shape)
10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160
µs
voltage wave shape)
5/310 (ITU-T K.44, 10/700
µs
voltage wave shape used in K.20/.45/.21)
5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720
µs
voltage wave shape)
10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560
µs
voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current (see Notes 1 and 2)
50 Hz, 1 cycle
60 Hz, 1 cycle
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-s tate current, Linear current ramp, Maximum ramp value < 50 A
Junction temperature
Storage temperature range
di
T
/dt
T
J
T
stg
I
TSM
2x25
2x30
2x1.2
500
-40 to +150
-65 to +150
A/µs
°C
°C
A
I
PPSM
2x250
2x250
2x150
2x120
2x120
2x100
2x80
A
V
DRM
Symbol
Value
±58
±65
±75
±90
±100
±120
±135
±145
±155
±180
±190
±220
±275
±320
V
Unit
NOTES: 1. Initially, the device must be in thermal equilibrium with T
J
= 25
°C.
2. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and
3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). The
surge may be repeated after the device returns to its initial conditions.
Recommended Operating Conditions
Component
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for ITU-T recommendation K. 20/.45/.21 (coordination with 400 V GDT at 4 kV)
R1, R2 Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 9/720 survival
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/560 survival
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/160 survival
Min
5
6.4
0
0
2.5
Typ
Max
Unit
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25
°C
Parameter
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
Test Conditions
T
A
= 25
°C
T
A
= 85
°C
’3070
’3080
’3095
’3115
’3125
’3145
V
(BO)
AC breakover voltage
dv/dt =
±250
V/ms, R
SOURCE
= 300
’3165
’3180
’3200
’3219
’3250
’3290
’3350
’3395
’3070
’3080
’3095
’3115
’3125
dv/dt
±1000
V/µs, Linear voltage ramp,
V
(BO)
Ramp breakover
voltage
Maximum ramp value =
±500
V
di/dt =
±20
A/µs, Linear current ramp,
Maximum ramp value =
±10
A
’3145
’3165
’3180
’3200
’3219
’3250
’3290
’3350
’3395
I
(BO)
I
H
dv/dt
I
D
Breakover current
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt =
±250
V/ms, R
SOURCE
= 300
I
T
=
±5
A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
=
±50
V
T
A
= 85
°C
±150
±5
±10
Min
Typ
Max
±5
±10
±70
±80
±95
±115
±125
±145
±165
±180
±200
±219
±250
±290
±350
±395
±81
±91
±107
±128
±138
±159
±179
±195
±215
±234
±265
±304
±361
±403
±800
mA
mA
kV/µs
µA
V
V
Unit
µA
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25
°C
(Continued)
Parameter
Test Conditions
f = 1 MHz, Vd = 1 V rms, V
D
= 0,
‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
f = 1 MHz, Vd = 1 V rms, V
D
= -1 V
‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
C
off
Off-state capacitance
f = 1 MHz, Vd = 1 V rms, V
D
= -2 V
‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
f = 1 MHz, Vd = 1 V rms, V
D
= -50 V
‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
f = 1 MHz, Vd = 1 V rms, V
D
= -100 V
(see Note 3)
NOTE
‘3250 thru ‘3395
Min
Typ
95
69
51
90
63
46
83
59
42
43
29
20
16
Max
114
83
62
108
76
55
100
70
51
51
35
24
19
pF
Unit
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
third terminal is connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
R
θJA
NOTE
Junction to free air thermal resistance
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
°C,
(see Note 4)
Min
Typ
Max
90
Unit
°C/W
4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
I
PPSM
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
V
(BO)
-v
I
DRM
V
DRM
V
D
I
D
I
D
V
D
V
DRM
I
DRM
+v
I
H
V
(BO)
V
T
I
T
I
Quadrant III
Switching
Characteristic
I
PPSM
-i
PM4XAE
I
TSM
Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2
All Measurements are Referenced to Terminal 2
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
小广播

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
搜索索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区知春路23号集成电路设计园量子银座1305 电话:(010)82350740 邮编:100191

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2021 EEWORLD.com.cn, Inc. All rights reserved