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TISP1XXXH3BJ

器件型号:TISP1XXXH3BJ
厂商名称:Bourns
厂商官网:http://www.bourns.com
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器件描述

Overvoltage Protector Series

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*R
oH
VE S CO
AV R M
AI SIO PL
LA N IA
BL S NT
E
TISP1070H3BJ THRU TISP1120H3BJ
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL
THYRISTOR OVERVOLTAGE PROTECTORS
TISP1xxxH3BJ Overvoltage Protector Series
Overvoltage Protection for Negative Rail SLICs
Dual High Current Protectors in a Space Efficient Package
- 2 x 100 A 10/1000 Current Rating
- SMB03 Package (3-pin Modified SMB/DO-214AA)
50 % Space Saving over Two SMBs
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
Device Name
TISP1070H3BJ
TISP1080H3BJ
TISP1095H3BJ
TISP1120H3BJ
V
DRM
V
-58
-65
-75
-95
V
(BO)
V
-70
-80
-95
-120
SMB03 Package (Top View)
1
2
3
MDXXCJA
Device Symbol
1
(T or R)
3
(R or T)
Rated for International Surge Wave Shapes
Wave Shape
2/10
8/20
10/160
10/700
10/560
10/1000
Standard
GR-1089-CORE
IEC 61000-4-5
TIA-968-A (FCC Part 68)
ITU-T K.20/21/45
TIA-968-A (FCC Part 68)
GR-1089-CORE
I
PPSM
A
500
300
200
150
120
100
2
(G)
SD1TAA
............................................... UL Recognized Component
Description
These dual unidirectional thyristor devices protect SLICs and ISDN power feeds in central office, access and customer premises equipment
against overvoltages on the telecom line. Each protector section consists of a voltage-triggered unidirectional thyristor with an anti-parallel
diode. In the negative polarity, the thyristor allows signal voltages, without clipping, up to the maximum off-state voltage value, V
DRM
, see
Figure 1. Voltages exceeding V
DRM
are limited and will not exceed the breakover voltage, V
(BO)
, level. If sufficient current flows due to the
overvoltage, the thyristor switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the thyristor.
When the diverted current falls below the holding current, I
H
, level the thyristor switches off and restores normal system operation. Positive
overvoltages are limited by the conduction of the anti-parallel diode.
The TISP1xxxH3BJ is available in four voltages and has a 100 A 10/1000 current rating. These protectors have been designed particularly for
use in equipment that must meet the following standards and recommendations: GR-1089-CORE, TIA-968-A (replaces FCC Part 68), ITU-T
K.20, K.21 and K.45. Housed in a SMB03 package (3-pin modified SMB/DO-214AA), these parts are space efficient to replace protection
designs of 100 A 10/1000 or less which use multiple SMBs or a 6-pin SMT package.
How to Order
For Standard
Termination Finish
Order As
For Lead Free
Termination Finish
Order As
TISP1xxxH3BJR-S
Device
Package
Carrier
Marking Code Std. Qty.
1xxxH3
3000
TISP1xxxH3BJ SMB03 (3-pin modified
SMB /DO-214AA)
Embossed Tape Reeled TISP1xxxH3BJR
Insert xxx value corresponding to device name.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JUNE 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
'1070
Repetitive peak off-state voltage, (Terminals 1-2 and 3-2) (see Note 1)
'1080
'1095
'1120
Non-repetitive peak on-state pulse current (see Notes 2 and 3)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (TIA-968-A (replaces FCC Part 68), 10/160
µs
voltage wave shape)
5/310 (ITU-T K.44, 10/700
µs
voltage wave shape used in K.20/45/21)
5/320 (TIA-968-A (replaces FCC Part 68), 9/720
µs
voltage wave shape)
10/560 (TIA-968-A (replaces FCC Part 68), 10/560
µs
voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current (see Notes 2 and 3)
50 Hz, 1 cycle
60 Hz, 1 cycle
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
Linear current ramp, Maximum ramp value < 50 A
di
T
/dt
T
J
T
stg
I
TSM
2x30
2x35
2x1.2
500
-40 to +150
-65 to +150
A/µs
°C
°C
A
I
PPSM
2x500
2x300
2x200
2x150
2x150
2x120
2x100
A
V
DRM
Symbol
Value
-58
-65
-75
-95
V
Unit
NOTES: 1. At -40
°C
derate linearly to 0.93 x V
DRM
(25
°C)
2. Initially the device must be in thermal equilibrium with T
J
= 25
°C.
3. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and
3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). The
surge may be repeated after the device returns to its initial conditions.
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25
°C
(Unless Otherwise Noted)
Parameter
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
Test Conditions
T
A
= 25
°C
T
A
= 85
°C
'1070
V
(BO)
AC breakover voltage
dv/dt = -250 V/ms,
R
SOURCE
= 300
'1080
'1095
'1120
I
(BO)
I
H
dv/dt
I
D
V
F
Breakover current
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Forward voltage
dv/dt = -250 V/ms,
R
SOURCE
= 300
-150
-5
T
A
= 85
°C
-10
3
Min
Typ
Max
-5
-10
-70
-80
-95
-120
-800
mA
mA
kV/µs
µA
V
V
Unit
µA
I
T
= -5 A, di/dt = +30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85 x V
DRM
V
D
= -50 V
I
F
= +5 A, t
W
= 500
µs
JUNE 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxH3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25
°C
(Unless Otherwise Noted)
Parameter
Test Conditions
'1070
f = 1 MHz,
C
off
Off-state capacitance
f = 1 MHz,
V
d
= 1 V rms, V
D
= -50 V
V
d
= 1 V rms, V
D
= -2 V
'1080
'1095
'1120
'1070
'1080
'1095
'1120
Min
Typ
161
152
139
116
58
55
50
42
pF
Max
Unit
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB,
T
A
= 25 °C, (see Note 4)
R
θJA
Junction to free air thermal resistance
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 °C
52
Min
Typ
Max
113
°C/W
Unit
NOTE 4: EIA/JESD51-2 environment and PCB have standard footprint dimensions connected with 5 A rated printed wiring track widths.
JUNE 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxH3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
I
PPSM
Quadrant I
Forward
Conduction
Characteristic
I
FSM
I
F
V
F
V
DRM
-v
I
DRM
V
D
I
D
+v
I
(BO)
I
H
V
(BO)
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
PPSM
-i
PMXXACd
Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2
All Measurements are Referenced to Terminal 2
+i
I
PPSM
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
I
(BO)
V
(BO)
-v
I
DRM
V
DRM
V
D
I
D
I
D
V
D
V
DRM
I
DRM
+v
I
(BO)
V
(BO)
I
H
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
PPSM
-i
PM4XAG
Figure 2. Voltage-Current Characteristic for Terminal Pair 1-3
All Measurements are Referenced to Terminal 3
JUNE 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxH3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC-TC3xx-001-a
1.10
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC-TC3xx-002-a
Normalized Breakover Voltage
150
10
I
D
- Off-State Current -
µA
1.05
1
0.1
1
V
D
= -50 V
0.01
1.00
0.001
-25
0
25
50
75
100 125
T
J
- Junction Temperature -
°C
0.95
-25
0
25
50
75
100 125
T
J
- Junction Temperature -
°C
150
Figure 3.
Figure 4.
ON-STATE AND FORWARD CURRENTS
vs
ON-STATE AND FORWARD VOLTAGES
I
T
, I
F
- On-State Current, Forward Current - A
200
150
100
70
50
40
30
20
15
10
7
5
4
3
2
1.5
1
0.7
1
1.5
2
3
4 5
7
10
V
T
, V
F
- On-State Voltage, Forward Voltage - V
V
F
V
T
2.0
T
A
= 25
°C
t
W
< 100
µs
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC-TC3xx-004-a
1.5
Normalized Holding Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0
25
50
75
100 125
T
J
- Junction Temperature -
°C
150
Figure 5.
JUNE 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Figure 6.
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