电子工程世界电子工程世界电子工程世界

产品描述

搜索
 

RGP15A

器件型号:RGP15A
器件类别:半导体    分立半导体   
厂商名称:BILIN
厂商官网:http://www.galaxycn.com/
下载文档

器件描述

1.5 A, SILICON, RECTIFIER DIODE, DO-15

文档预览

BL
FEATURES
Low cost
GALAXY ELECTRICAL
RGP15A(Z) - - - RGP15M(Z)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
FAST RECOVERY RECTIFIER
DO - 15
Diffused juncton
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.014ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RGP
15A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
RGP
15B
100
70
100
RGP
15D
200
140
200
RGP
15G
400
280
400
1.5
RGP
15J
600
420
600
RGP
15K
800
560
800
RGP
15M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
50.0
A
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
5.0
200.0
250
18
45
- 55---- +150
- 55---- + 150
500
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261010
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
RGP15A(Z)---RGP15M(Z)
FIG.2 --PEAK FORWARD SURGE CURRENT
1.50
1.25
50
1.00
40
T
J
=125
8.3m Single Half
s
Sine-W
ave
(JED M
EC ETHO )
D
AMPERES
0.75
30
0.50
20
Single Phase
Half W 60H
Z
ave
0.25
Resistive or
Inductive Load
0
0
25
50
75
100
125
150
175
10
0
1
10
100
AMBIENT TEMPERATURE,
FIG.3 --TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
AMPERES
NUMBER OF CYCLES AT 60Hz
FIG.4--TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
100
10
T
J
=25
Pulse Width=300
µ
S
200
100
60
40
20
10
6
4
2
1
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T
J
=25
f=1.0MH
Z
.1
.2
.4
1.0
2
4
10
20
40
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
FIG.5--REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
N.1.
10
N.1.
t
rr
1cm
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
( - )
0
PULSE
GENERATOR
(NOTE2)
1
N.1.
OSCILLOSCOPE
(NOTE 1)
( + )
-0.25A
-1.0A
N TE 1. R TIM = 7ns M IN U IM E AN E= 1M . 22pF
O S:
ISE E
AX. P T P D C
2. R TIM = 10ns M SO R EIM E AN E= 50
ISE E
AX. U C P D C
SE TIM BASE FO 50/100 ns /cm
T E
R
www.galaxycn.com
Document Number 0261010
BL
GALAXY ELECTRICAL
2.
小广播

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
搜索索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区知春路23号集成电路设计园量子银座1305 电话:(010)82350740 邮编:100191

电子工程世界版权所有 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2021 EEWORLD.com.cn, Inc. All rights reserved