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D260VG

器件型号:D260VG
器件类别:半导体    分立半导体   
厂商名称:BCD Semi(Diodes)
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器件描述

2 A, 60 V, SILICON, RECTIFIER DIODE, DO-41

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Preliminary Datasheet
SCHOTTKY BARRIER RECTIFIERS
Features
·
·
·
·
Low Forward Voltage Drop
Very Small Conduction Losses
High Surge Capability
Surge Overload Rating up to 50A Peak Value
APD260
Applications
·
·
·
·
Low Voltage High Frequency Inverters
DC-DC Converters
Free Wheeling
Polarity Protection
DO-41
DO-15
Figure 1. Package Types of APD260
Pin Configuration
VD/VG Package
(DO-41/DO-15)
Cathod
Anode
Figure 2. Pin Configuration of APD260
Jun. 2008 Rev. 1. 1
1
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet
SCHOTTKY BARRIER RECTIFIERS
Ordering Information
APD260
Circuit Type
-
E1: Lead Free
TR: Ammo
Blank: Bulk
APD260
Package
VD: DO-41
VG: DO-15
Package
DO-41
DO-15
Part Number
APD260VD-E1
APD260VDTR-E1
APD260VG-E1
APD260VGTR-E1
Marking ID
D260VD
D260VD
D260VG
D260VG
Packing Type
Bulk
Ammo
Bulk
Ammo
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted) (Note 1)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
Average Rectified Forward Current
0.375 " (9.5mm) Lead Length (See Figure 3)
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half Sine-Wave on Rated Load
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
DC
V
RMS
I
F(AV)
I
FSM
T
J
T
STG
Value
60
60
42
2.0
50
-65 to 125
-65 to 150
Unit
V
V
V
A
A
o
C
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Jun. 2008 Rev. 1. 1
2
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet
SCHOTTKY BARRIER RECTIFIERS
Thermal Characteristics
(T
A
=25
o
C, unless otherwise noted)
Parameter
Typical Thermal Resistance (Note 2)
Symbol
R
θ
JA
R
θ
JL
Values
52
14
Unit
o
C/W
APD260
Note 2: Thermal resistance from junction to lead, PCB mounted, 0.375" (9.5mm) lead length.
Electrical Characteristics
(T
A
=25
o
C, unless otherwise noted)
Parameter
Forward Voltage @ I
F
=2.0A
Reverse Current @ Rated V
R
(Note 3)
T
A
=25
o
C
T
A
=100
o
C
Symbol
V
F
I
R
Values
0.68
0.5
10
Unit
V
mA
Note 3: Pulse Test: 300
µS
pulse width, 1.0% duty cycle.
Typical Performance Characteristics
(T
A
=25
o
C, unless otherwise noted)
2.5
Average Forward Current (A)
2.0
Instantaneous Forward Current (A)
10
1.5
1
1.0
Resistive or Inductive Load
0.375''(9.5mm) Lead length
0.5
0.1
T
J
=25 C
o
T
J
=125 C
o
0.0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
o
Lead Temperature
(
C
)
Instantaneous Forward Voltage (V)
Figure 3. Forward Current Derating Curve
Figure 4. Typical Instantaneous Forward Characteristics
Jun. 2008 Rev. 1. 1
3
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet
SCHOTTKY BARRIER RECTIFIERS
Typical Performance Characteristics (Continued)
APD260
50
45
10
5
Instantanous Reverse Current (
µ
A)
Peak Forward Surge Current (A)
10
4
40
35
30
25
20
15
10
10
3
10
2
T
J
=25 C
T
J
=125 C
o
o
T
J
=T
J
(max)
Single Half Sine-Wave
10
1
10
100
10
0
Number of Cycles at 60Hz
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Maximum Non-Repetitive
Peak Forward Surge Current
Figure 6. Typical Reverse Characteristics
Junction Capacitance (pF)
TJ=25 C
f=1.0MHz
V
SIG
=50mVp-p
100
o
10
0.1
1
10
100
Reverse Voltage (V)
Figure 7. Typical Junction Capacitance
Jun. 2008 Rev. 1. 1
4
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet
SCHOTTKY BARRIER RECTIFIERS
Mechanical Dimensions
DO-41
Unit: mm(inch)
APD260
25.400(1.000) MIN
0.700(0.028)
0.900(0.035)
DIA.
4.200(0.165)
5.200(0.205)
2.000(0.080)
2.700(0.107)
DIA.
25.400(1.000) MIN
Jun. 2008 Rev. 1. 1
5
BCD Semiconductor Manufacturing Limited

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