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BC857CW,135

器件型号:BC857CW,135
器件类别:晶体管   
厂商名称:Nexperia
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器件描述

BC856W; BC857W; BC858W - PNP general purpose transistors SC-70 3-Pin

参数
参数名称属性值
Brand NameNexperia
生命周期Active
厂商名称Nexperia
零件包装代码SC-70
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
制造商包装代码SOT323
Reach Compliance Codecompliant
ECCN代码EAR99
HTS代码8541.21.00.95
Is SamacsysN
最大集电极电流 (IC)0.1 A
基于收集器的最大容量5 pF
集电极-发射极最大电压45 V
配置SINGLE
最小直流电流增益 (hFE)420
JESD-30 代码R-PDSO-G3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型PNP
认证状态Not Qualified
表面贴装YES
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间40
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz
VCEsat-Max0.65 V
Base Number Matches1

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Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BC856W; BC857W; BC858W
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 12
2002 Feb 04
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC846W, BC847W and BC848W.
MARKING
TYPE NUMBER
BC856W
BC856AW
BC856BW
BC857W
BC857AW
BC857BW
BC857CW
BC858W
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
MARKING CODE
(1)
3D*
3A*
3B*
3H*
3E*
3F*
3G*
3M*
Fig.1
1
Top view
handbook, halfpage
BC856W; BC857W;
BC858W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
2
MAM048
Simplified outline (SOT323; SC70) and
symbol.
2002 Feb 04
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
BC856W
BC857W
BC858W
V
CEO
collector-emitter voltage
BC856W
BC857W
BC858W
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323 standard mounting conditions.
PARAMETER
thermal resistance from junction to
ambient
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
open base
PARAMETER
collector-base voltage
BC856W; BC857W; BC858W
CONDITIONS
open emitter
T
amb
25
°C;
note 1
MIN.
MAX.
−80
−50
−30
−65
−45
−30
−5
−100
−200
−200
200
+150
150
+150
V
V
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
−65
−65
CONDITIONS
in free air; note 1
VALUE
625
UNIT
K/W
2002 Feb 04
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
BC856W; BC857W; BC858W
CONDITIONS
V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
E
= 0;
T
j
= 150
°C
MIN.
125
125
125
220
420
TYP.
−1
−75
−250
−700
−850
−650
MAX.
−15
−4
−100
475
800
250
475
800
−300
−600
−750
−820
3
12
10
UNIT
nA
μA
nA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC856W
BC857W; BC858W
BC856AW; BC857AW
BC856BW; BC857BW
BC857CW
V
EB
=
−5
V; I
C
= 0
I
C
=
−2
mA; V
CE
=
−5
V
V
CEsat
collector-emitter saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA;
note 1
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA;
note 1
V
BE
C
c
C
e
f
T
F
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
V
CB
=
−10
V; I
E
= I
e
= 0;
f = 1 MHz
V
EB
=
−0.5
V; I
C
= I
c
= 0;
f = 1 MHz
V
CE
=
−5
V; I
C
=
−10
mA;
f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
−600
100
Note
1. Pulse test: t
p
300
μs; δ ≤
0.02.
2002 Feb 04
4
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