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AO3401

器件型号:AO3401
器件类别:分立半导体    MOS(场效应管)   
厂商名称:KEXIN
厂商官网:http://www.kexin.com.cn/html/index.htm
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器件描述

漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):4.2A 栅源极阈值电压:1.3V @ 250uA 漏源导通电阻:50mΩ @ 4.2A,10V 最大功率耗散(Ta=25°C):1.4W 类型:P沟道 P沟道,-30V -4.2A

参数
参数名称属性值
属性参数值
商品目录MOS(场效应管)
漏源电压(Vdss)30V
连续漏极电流(Id)(25°C 时)4.2A
栅源极阈值电压1.3V @ 250uA
漏源导通电阻50mΩ @ 4.2A,10V
最大功率耗散(Ta=25°C)1.4W
类型P沟道

文档预览

SMD Type
P-Channel Enhancement
MOSFET
AO3401
(KO3401)
SOT-23
MOSFET
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
V
DS (V)
=-30V
+0.1
2.4
-0.1
I
D
=-4.2 A (V
GS
=-10V)
R
DS(ON)
50mΩ (V
GS
=-10V)
R
DS(ON)
65mΩ (V
GS
=-4.5V)
R
DS(ON)
120mΩ (V
GS
=-2.5V)
D
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
Features
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
0-0.1
S
+0.1
0.38
-0.1
G
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t
10s
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Junction and Storage Temperature Range
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
T
stg
Rating
-30
±12
-4.2
-3.5
-30
1.4
1
90
125
60
150
-55 to 150
℃/W
W
A
Unit
V
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1
SMD Type
P-Channel Enhancement
MOSFET
AO3401
(KO3401)
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-4.2A
Static Drain-Source On-Resistance
R
DS(O
n
)
V
GS
=-10V, I
D
=-4.2A
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-1A
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=-1A,V
GS
=0V
I
F
=-4A, d
I
/d
t
=100A/μs
I
F
=5A, d
I
/d
t
=100A/μs
V
GS
=-10V, V
DS
=-15V, R
L
=3.6Ω,R
GEN
=6Ω
V
GS
=-4.5V, V
DS
=-15V, I
D
=-4A
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=-4.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-5A
-25
7
T
J
=125℃
-0.4
Min
-30
MOSFET
Typ
Max
-1
-5
±100
-1.3
50
75
65
120
Unit
V
μA
nA
V
A
11
954
115
77
6
9.4
2
3
6.3
3.2
38.3
12
20.2
11.2
-2.2
-0.75
-1
nC
A
V
ns
nC
Ω
pF
S
Marking
Marking
A1*
2
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SMD Type
P-Channel Enhancement
MOSFET
AO3401
(KO3401)
Typical Characterisitics
25.00
-10V
20.00
15.00
10.00
5.00
0.00
0.00
-2.5V
-4.5V
-3V
-I
D
(A)
6
-I
D
(A)
125°C
8
10
V
DS
=-5V
MOSFET
4
V
GS
=-2V
2
25°C
0
1.00
2.00
3.00
4.00
5.00
0
0.5
1
1.5
2
2.5
3
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.8
Normalized On-Resistance
1.6
1.4
1.2
1
0.8
2.00
4.00
6.00
8.00
10.00
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
I
D
=-2A
-I
S
(A)
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
1.0E-06
25°C
V
GS
=-2.5V
I
D
=-1A
I
D
=-3.5A, V
GS
=-4.5V
I
D
=-3.5A, V
GS
=-10V
120
100
R
DS(ON)
(m
)
80
60
40
V
GS
=-10V
20
0.00
V
GS
=-2.5V
V
GS
=-4.5V
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
170
150
R
DS(ON)
(m
)
130
110
90
70
50
30
10
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
125°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
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3
SMD Type
P-Channel Enhancement
MOSFET
AO3401
(KO3401)
Typical Characterisitics
5
4
-V
GS
(Volts)
3
2
1
200
0
0
2
4
6
8
10
12
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
V
DS
=-15V
I
D
=-4A
Capacitance (pF)
1400
1200
1000
800
600
400
C
oss
C
rss
C
iss
MOSFET
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
T
J(Max)
=150°C
T
A
=25°C
40
10
µs
Power (W)
100
µs
1ms
0.1s
10ms
30
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
R
DS(ON)
10.0 limited
20
1.0
1s
10s
DC
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
.
Operating Area (Note E)
10
100
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
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