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2N7002

器件型号:2N7002
器件类别:分立半导体    MOS(场效应管)   
厂商名称:KEXIN
厂商官网:http://www.kexin.com.cn/html/index.htm
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SMD Type
N-Channel Enhancement
MOSFET
2N7002
SOT-23
MOSFET
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Features
High density cell design for low R
DS(ON)
+0.1
2.4
-0.1
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
3.collector
3 DRAIN
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source voltage
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
DS
I
D
P
D
T
J
T
stg
Rating
60
115
225
150
-55 to 150
Unit
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-threshold voltage
Drain-source on-resistance
On-state drain current
Forward tran conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on Time
Turn-off Time
Drain-source on-voltage
Diode forward voltage
Symbol
V
DSS
I
DSS
l
GSS
V
GS(th)
r
DS(0n)
I
D(on)
g
ts
C
iss
C
OSS
C
rSS
t
d(0n)
t
d(off)
V
DS(on)
V
SD
V
DD
=25 V, R
L
=50
I
D
=500 mA,V
GEN
=10 V
R
G
=25
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
I
S
=115 mA, V
GS
=0 V
0.55
V
DS
=25 V, V
GS
=0 V, f=1 MHz
Testcondit ions
V
GS
=0 V, I
D
=10 0 μA
V
DS
=60 V, V
GS
=0 V
V
DS
=0 V, V
GS
= 25 V
V
DS
=V
GS
, I
D
=250 μA
V
GS
=10 V, I
D
=500 mA
V
GS
=5 V, I
D
=50 mA
V
GS
=10 V, V
DS
=7 V
V
DS
=10 V, I
D
=200 mA
500
80
50
25
5
20
ns
40
3.75
0.375
1.2
V
V
V
pF
1
Min
60
80
80
2.5
7.5
7.5
mA
ms
Typ
Max
Unit
V
nA
nA
V
Marking
Marking
702.
+0.1
0.38
-0.1
0-0.1
www.kexin.com.cn
1
SMD Type
N-Channel Enhancement
MOSFET
2N7002
Typical Characterisitics
Output Characteristics
1.0
MOSFET
Transfer Characteristics
1.0
T
a
=25
Pulsed
0.8
V
GS
=10V,9V,8V,7V,6V,5V
T
a
=25
Pulsed
0.8
(A)
D
D
(A)
0.6
0.6
I
DRAIN CURRENT
DRAIN CURRENT
V
GS
=4V
0.4
I
V
GS
=3V
V
GS
=2V
0
1
2
3
4
5
0.4
0.2
0.2
0.0
0.0
0
2
4
6
8
10
DRAIN TO SOURCE
VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
—— I
D
N
8
6
R
DS(ON)
——
T
a
=25
Pulsed
V
GS
T
a
=25
Pulsed
(
)
6
(
)
DS(ON)
DS(ON)
4
I =500mA
D
R
V
GS
=5V
4
ON-RESISTANCE
ON-RESISTANCE
R
I =50mA
D
2
V
GS
=10V
2
0
0.0
0
0.2
0.4
0.6
0.8
1.0
0
6
12
18
GS
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
(V)
I
S
—— V
SD
1
T
a
=25
Pulsed
(A)
I
SOURCE CURRENT
S
0.3
0.1
0.03
0.01
0.0
0.4
0.8
1.2
1.6
SOURCE TO DRAIN
VOLTAGE
V
SD
(V)
2
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