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WPM1481-6/TR

器件型号:WPM1481-6/TR
器件类别:分立半导体    MOS(场效应管)   
厂商:WILLSEMI(韦尔)

韦尔半导体将为数字世界提供开关器件、信号放大器件、系统电源及控制方案、系统保护方案、电磁干扰滤波方案、分立器件 。我们目前有8条产品线:模拟开关,音频功放,电源管理包括单片直流 - 直流转换器、线性稳压器,电磁干扰滤波器,静电放电( ESD )保护电路, MOSFET,二极管,功率三级管 。 

上海韦尔半导体有限公司是一家以自主研发、销售服务为主体的半导体器件设计和销售公司,公司成立于2007年5月,总部坐落于有“中国硅谷”之称的上海张江高科技园区,在深圳、台湾、香港等地设立办事处。公司主营产品包括保护器件 (TVS、TSS)、功率器件 (MOSFET、Schottky Diode、Transistor)、电源管理器件 (Charger、LDO、Buck、Boost、Backlight LED Driver、Flash LED Driver)、模拟开关等四条产品线,700多个产品型号,产品在手机、电脑、电视、通讯、安防、车载、穿戴、医疗等领域得到广泛应用,公司业绩连续多年保持稳定增长。

随着公司发展,公司逐步引进大量人才,重点加强研发、品质等方面人才储备,同时建立了先进的可靠性实验室、EMC实验室,在产品的研发、试产、量产过程中,对产品质量层层把关,并为合作伙伴提供大量的EMC测试,在得到合作伙伴认可的同时,韦尔半导体正逐步成为国际知名的半导体器件厂商。

保护器件(100),小功率保护器件(83),大功率保护器件(10),SCR固体放电管(7),气体放电管(0);肖特基二极管(35);场效应晶体管(81);双极型晶体管(8);电源管理(48);线性稳压器(13);开关稳压器(9);白光驱动(10);过压保护(4);电池充电(5);负载开关(7);模拟开关(14);数据(7);音频(7)

产品应用:移动电话,平板电脑,机顶盒,IP 摄像头,穿戴设备,蓝牙音箱,移动支付

厂商官网:http://www.willsemi.com/
下载文档

器件描述

漏源电压(Vdss):12V 连续漏极电流(Id)(25°C 时):4.3A 栅源极阈值电压:900mV @ 250uA 漏源导通电阻:28mΩ @ 5.5A,4.5V 最大功率耗散(Ta=25°C):1.4W 类型:P沟道

参数
参数名称属性值
属性参数值
商品目录MOS(场效应管)
漏源电压(Vdss)12V
连续漏极电流(Id)(25°C 时)4.3A
栅源极阈值电压900mV @ 250uA
漏源导通电阻28mΩ @ 5.5A,4.5V
最大功率耗散(Ta=25°C)1.4W
类型P沟道

WPM1481-6/TR产品介绍

WPM1481
WPM1481
Single P-Channel, -12V, -5.1A, Power MOSFET
V
DS
(V)
-12
Typical Rds(on) (Ω)
0.024@ VGS= - 4.5V
0.032@ VGS= - 2.5V
0.047@ VGS= - 1.8V
I
D
(A)
-5.5
-4.0
-2.5
DFN2*2-6L
Http://www.sh-willsemi.com
Descriptions
The WPM1481 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM1481 is Pb-free.
D
6
D
5
D
S
4
S
1
D
2
D
3
G
Pin configuration (Top view)
Features
6
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package
DFN2*2-6L
C
Y
WW
1
WLSI
5
4
WLSI
CYWW
2
3
= Company Code
= Device Code
= Year
= Week
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Device
WPM1481- 6/TR
Marking
Order information
Package
DFN2*2-6L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1
2017/08/05- Rev.1.5
WPM1481
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
ad
Symbol
V
DS
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
10 S
Steady State
-12
±
12
Unit
V
-5.1
-4.0
1.9
1.2
-3.7
-3.0
1.0
0.6
-24
-55~150
260
-55 ~150
-4.3
-3.4
1.4
0.9
-3.0
-2.4
0.6
0.4
A
Maximum Power Dissipation
bd
ad
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
P
D
W
Continuous Drain Current
I
D
A
Maximum Power Dissipation
Pulsed Drain Current
c
bd
T
A
=25°
C
T
A
=70°
C
P
D
I
DM
T
J
T
L
T
stg
W
A
°
C
°
C
°
C
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
a
Symbol
t ≤ 10 s
Steady State
b
Typical
49
66
84
125
32
Maximum
64
88
118
180
42
Unit
R
θJA
R
θJA
R
θJC
t ≤ 10 s
Steady State
Steady State
°
C/W
a
b
c
d
e
Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR-4 board using minimum pad size, 1oz copper
Pulse width<380µs, Single pulse
Maximum junction temperature T
J
=150°
C.
Pulse test: Pulse width <380 us duty cycle <2%.
Will Semiconductor Ltd.
2
2017/08/05- Rev.1.5
WPM1481
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250uA
VGS = -4.5V, ID = -5.5A
Drain-to-source On-resistance
b, e
Symbol
Test Conditions
Min
Typ
Max
Unit
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= -250uA
V
DS
=
-10V,
V
GS
= 0V
V
DS
= 0 V, V
GS
10V
-12
-1
±
100
V
uA
nA
-0.4
24
26
32
47
23
-0.9
28
30
40
61
V
R
DS(on)
VGS = -4.0V, ID = -4.0A
VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.5A
mΩ
Forward Transconductance
e
g
FS
V
DS
=-5.0V, I
D
= -5.5A
S
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 1.0A
-0.76
-1.5
V
td
(ON)
tr
td
(OFF)
tf
V
GS
= -4.5 V,
V
DS
= -6 V,
R
L
=3 Ω,
R
G
=6 Ω
33.6
35.6
50
63
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= -4.5 V,
V
DS
= -10 V,
I
D
= -5.5A
V
GS
= 0 V,
f = 1.0 MHz,
V
DS
= -10 V
1880
437
413
44.5
3.5
1.7
9.25
nC
pF
Will Semiconductor Ltd.
3
2017/08/05- Rev.1.5
WPM1481
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
20
V
GS
=-4.5V
15
V
GS
=-2.5V
10
V
GS
=-1.8V
V
GS
=-3.7V
20
V
DS
=-5V
15
T=25 C
0
- I
DS
-Drain to Source Current(A)
-I
D
-Drain-to-Source Current(A)
10
T=125
0
C
5
T=-55
0
C
5
V
GS
=-1.5V
0
0.0
0.5
1.0
1.5
0
0.0
0.5
1.0
1.5
2.0
2.5
-V
DS
-Drain-to-Source Voltage(V)
-V
GS
-Gate to Source Voltage(V)
Output characteristics
80
70
60
50
R
DS(ON)
- n-Resist
40
30
20
10
0
5
10
15
20
-V
DS
-Drain-to-Source Voltage(V)
V =-4.5V
GS
20
1.5
2.0
V =-2.5V
GS
R
DS(ON)
-On-Resistance(m )
V
GS
=-1.8V
m
120
Transfer characteristics
I =-5.5A
D
80
60
40
2.5
3.0
3.5
4.0
4.5
-V
GS
-Gate-to-Source Voltage(V)
On-Resistance vs. Drain current
1.5
I
1.4
n-Resistance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
Normalized Gate Threshold Voltage
D
On-Resistance vs. Gate-to-Source voltage
1.3
= -5.5A
V
GS
= -4.5V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
0
50
Temperature ( C)
o
I =-250uA
D
Normalized
0
50
Temperature( C)
0
100
150
100
150
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
2017/08/05- Rev.1.5
WPM1481
3600
3200
2800
C-Capactance (pF)
2400
2000
1600
1200
800
400
0
2
4
6
8
10
f=1MHZ
V
GS
=0V
Crss
Coss
Ciss
2.0
1.8
T=25 C
O
T=150 C
O
-I
SD
-Source to Drain Current(A)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
-V
DS
-Drain-to-Source Voltage(V)
-V
SD
-Source-to Drain Voltage(V)
Capacitance
40
T
J(Max)
=150 C
30
-I
DS
-Drain to Source Current(A)
0
Body diode forward voltage
100
T
A
=25 C
0
Limited by R
DS(on)
10
100us
1ms
1
DC
0.1
T
A
= 25 C
0
Power (W)
20
10ms
100ms
1s
10s
BVDSS Limited
1
10
100
10
Single Pulse
0
1E-3
0.01
0.1
1
Time (s)
10
100
1000
0.01
0.1
-V
DS
- Drain-to-Source Voltage (V)
Single pulse power
5
V
DS
= -10V
4
-V
GS
-Gate Voltage (V)
I
D
= -5.5A
Safe operating power
3
2
1
0
0
5
10
15
Qg(nC)
20
25
30
Gate Charge Characteristics
Will Semiconductor Ltd.
5
2017/08/05- Rev.1.5
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