电子工程世界电子工程世界电子工程世界

产品描述

搜索
 

SK2306

器件型号:SK2306
器件类别:分立半导体    MOS(场效应管)   
厂商:SHIKUES(时科)
时科,源自台湾,全球知名的半导体分立元器件厂商之一,主要提供工程师与设计人员各种半导体产品与软件,为汽车、通信、计算机、消费电子、工业、LED照明、医疗、航空及电源应用等产品带来更优质的感知体验。自创办以来,在“让产品拥有良芯”的核心理念指导下,以安全、低能耗、高性能为宗旨,时科半导体的研发战略从来没有动摇过,近四分之一的员工在研发与产品设计领域工作,每年研发费用占总收入的22%左右,加之年轻的、充满梦想和激情的员工的艰苦奋斗,时科迅速发展,产品远销到北美、欧洲和亚太地区,被认为是半导体行业最具创新力的公司之一。时科将会在安全、能耗和性能方面不断优化,更加灵活地满足设计工程师和不断变化的市场需要,从概念设计到生产制造,我们将提供全程支持。展望未来,我们将立足创新,不断为客户、员工和全社会创造价值,通过降低能耗、改善安全,提升性能,重点关注如何利用技术研发改善公众生活品质,我们将全力以赴,践行承诺。
厂商官网:http://www.shike.tw
下载文档

器件描述

漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):3.6A 栅源极阈值电压:2.2V @ 250uA 漏源导通电阻:58mΩ @ 3.6A,10A 最大功率耗散(Ta=25°C):1.7W 类型:N沟道 2306场效应管,N沟道,30V,3.6A,58mΩ@10V,性价比高

参数
参数名称属性值
属性参数值
漏源电压(Vdss)30V
连续漏极电流(Id)(25°C 时)3.6A
栅源极阈值电压2.2V @ 250uA
漏源导通电阻58mΩ @ 3.6A,10A
最大功率耗散(Ta=25°C)1.7W
类型N沟道

SK2306产品介绍

SK2306
N-Channel
Enhancement Mode Power MOSFET
Description
The
SK
2306 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge .This device is suitable
for use as a load switch or in PWM applications.
D
General Features
V
DS
= 30V,I
D
= 3.6A
R
DS(ON)
< 73mΩ @ V
GS
=4.5V R
DS(ON)
<58mΩ @ V
GS
=10V
High power and current handing capability
Lead free product is acquired
Surface mount package
G
S
Schematic diagram
SOT-23 top view
Marking and pin assignment
Application
Battery protection
Load switch
Power management
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
Limit
30
±20
3.6
15
1.7
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
73.5
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=30V,V
GS
=0V
30
-
33
-
-
1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
1 of 5
SK2306
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=2.7A
-
-
0.8
-
1.2
1.6
V
A
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=15V,I
D
=3.6A,
V
GS
=10V
V
DD
=10V,I
D
=3.6A
V
GS
=4.5V,R
GEN
=6Ω
-
-
-
-
-
-
-
10
50
10
20
4.0
0.75
0.65
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=15V,V
GS
=0V,
F=1.0MHz
-
-
-
230
40
17
-
-
-
PF
PF
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=3.1A
V
GS
=10V, I
D
=3.6A
V
DS
=5V,I
D
=3.6A
1.2
-
-
-
1.5
58
40
11
2.2
73
58
-
V
mΩ
mΩ
S
I
GSS
V
GS
=±20V,V
DS
=0V
-
-
±100
nA
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
10 sec.
3.
Pulse Test: Pulse Width
300μs, Duty Cycle
2%.
4.
Guaranteed by design, not subject to production
2 of 5
SK2306
Typical Electrical and Thermal Characteristics
Vdd
Rl
D
G
S
Vout
t
d(on)
t
on
t
r
90%
t
d(off)
t
off
t
f
90%
Vin
Vgs
Rgen
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
I
D
- Drain Current (A)
P
D
Power(W)
T
J
-Junction Temperature(℃)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
I
D
- Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
3 of 5
SK2306
Normalized On-Resistance
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(Ω)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
4 of 5
SK2306
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13
r(t),Normalized Effective
Transient Thermal Impedance
Safe Operation Area
Square Wave
Pluse
Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
5 of 5
小广播

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区知春路23号集成电路设计园量子银座1305 电话:(010)82350740 邮编:100191

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2021 EEWORLD.com.cn, Inc. All rights reserved