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PS2501-S

器件型号:PS2501-S
器件类别:光电子/LED    光耦   
厂商:UMW(友台半导体)
友台半导体有限公司是专业从事集成电路及半导体分立器件的设计、生产制造和销售的一体式高新科技企业。公司成立于2009年,是一家中台合资企业,生产基地位于深圳市坪山新区,一直专心致力于集成电路产业的发展,力求为客户提供性能优异和供需及时的产品。公司产品主要在电源管理IC,音频功放,LED驱动,低功耗LDO,三端稳压,MOS管,光耦,整流桥,马达驱动等 ;主要应用范围:机顶盒、便携式电子产品、音响及车载导航、电子称、LED照明、遥控玩具、安防产品、空气净化器、医疗器械、蓝牙产品、电动玩具、通讯产品和电池供电产品等各领域。公司始终坚持‘以诚待人,以信立企’,秉承“全面超越用户需求”的理念,不断努力为用户提供超满意性价比的产品和服务。
厂商官网:http://www.umw-ic.com/
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器件描述

-S代表贴片

参数
属性参数值

PS2501-S产品介绍

UMW
R
UMW PS2501
PHOTOCOUPLER
PS2501-1
HIGH ISOLATION VOLTAGE
SINGLE TRANSISTOR TYPE
MULTI PHOTOCOUPLER SERIES
DESCRIPTION
The PS2501-1, -2, -4 are optically coupled isolators
containing a GaAs light emitting diode and an
NPN silicon phototransistor.
FEATURES
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High collector to emitter voltage (V
CEO
= 80 V)
• High-speed switching (t
r
= 3
s
TYP., t
f
= 5
s
TYP.)
• UL approved: File No. E492440
PS2501-2
Unit: mm
PS2501-3
Weight: 0.31g
www.umw-ic.com
1
友台半导½有限公司
UMW
R
UMW PS2501
Ratings
Parameter
Symbol
PS2501-1,
PS2501-2,-4
Unit
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C,
unless otherwise specified)
Diode
Reverse Voltage
Forward Current (DC)
Power Dissipation Derating
Power Dissipation
Peak Forward Current
*1
V
R
I
F
P
D
/C
P
D
I
FP
V
CEO
V
ECO
I
C
P
C
/C
P
C
BV
T
A
T
stg
1.5
150
1.5
150
6
80
1.2
120
1
80
7
50
1.2
120
5 000
55
to +100
55
to +150
V
mA
mW/C
mW/ch
A
V
V
mA/ch
mW/C
mW/ch
Vr.m.s.
C
C
Transistor
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1
PW = 100
s,
Duty Cycle = 1 %
*2
AC voltage for 1 minute at T
A
= 25
C,
RH = 60 % between input and output
Product Naming System
Type of package used for shipment is denoted by a symbol suffix after a product number. The method of
classification is as below.
(Example)
UMW
PS
2501
-
X X X
−X
None - DIP
S - SMD
CTR RANK
1 - 4PIN
2 - 8PIN
3
- 12PIN
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2
友台半导½有限公司
UMW
Diode
R
UMW PS2501
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Symbol
V
F
I
R
C
t
I
CEO
CTR
V
CE (sat)
R
I-O
C
I-O
t
r
t
f
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1.0 MHz
V
CE
= 80 V, I
F
= 0 mA
I
F
= 5 mA, V
CE
= 5 V
I
F
= 10 mA, I
C
= 2 mA
V
I-O
= 1.0 kV
DC
V = 0 V, f = 1.0 MHz
V
CC
= 10 V, I
C
= 2 mA, R
L
= 100
10
11
0.5
3
5
80
300
50
100
600
0.3
Conditions
MIN.
TYP.
1.17
MAX.
1.4
5
Unit
V
A
pF
nA
%
V
pF
s
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
Transistor
Coupled
Collector to Emitter Dark
Current
Current Transfer Ratio
*1
(I
C
/I
F
)
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
*2
*2
*1
C
*2
Test circuit for switching time
Pulse Input
I
F
V
CC
PW = 100
s
Duty Cycle = 1/10
50
V
OUT
R
L
= 100
Current Transfer Ratio
Type
Classificatio
n (Note 1)
Current Transfer Ratio
(%) (I
C
/ I
F
)
I
F
= 5mA, V
CE
= 5V, Ta =
25°C
Min
Max
Marking of Classification
None
80
100
130
80
100
600
Blank
Rank
Q
Rank
W
Rank
H
200
260
160
300
240
400
600
_
Q
W
H
D
M
L
K
_
PS2501
Rank
D
Rank
M
Rank
L
Rank
K
Rank
80
200
300
_
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3
友台半导½有限公司
UMW
150
R
UMW PS2501
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
Transistor Power Dissipation P
C
(mW)
TYPICAL CHARACTERISTICS (T
A
= 25
C,
unless otherwise specified)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Diode Power Dissipation P
D
(mW)
PS2501-1
100
PS2501-2
PS2501-4
50
1.5 mW/˚C
PS2501-1
100
PS2501-2
PS2501-4
1.5 mW/˚C
1.2 mW/˚C
50
1.2 mW/˚C
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
50
Forward Current I
F
(mA)
T
A
= +100 ˚C
+60 ˚C
+25 ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
70
60
Collector Current I
C
(mA)
50
40
30
20
10
I
F
= 5 mA
10
5
1
0.5
0 ˚C
–25 ˚C
–55 ˚C
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
2
4
6
8
10
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
10 000
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
40
1 000
Collector Current I
C
(mA)
V
CE
= 80 V
40 V
24 V
10 V
5V
10
5
I
F
= 1 mA
1
0.5
100
10
1
– 50
–25
0
25
50
75
100
0.1
0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE(sat)
(V)
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4
友台半导½有限公司
UMW
Normalized Current Transfer Ratio CTR
1.2
1.0
/
0.8
0.6
0.4
0.2
0
R
UMW PS2501
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
450
//
Current Transfer Ratio CTR (%)
//// /////
//
400
350
300
250
200
150
100
50
0
0.05 0.1
0.5
1
5
10
50
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
///
//
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 5 mA, V
CE
= 5 V
–50
–25
0
25
50
75
100
Ambient Temperature T
A
(˚C)
Forward Current I
F
(mA)
SWITCHING TIME vs.
LOAD RESISTANCE
50
I
C
= 2 mA,
V
CC
= 10 V,
CTR = 290%
1 000
t
f
t
r
Switching Time t (
s)
100
SWITCHING TIME vs.
LOAD RESISTANCE
I
F
= 5 mA,
V
CC
= 5 V,
CTR = 290%
t
f
Switching Time t (
s)
10
t
s
t
d
t
s
1
10
t
r
0.1
10
50 100
500 1 k
5 k 10 k
1
100
t
d
500 1 k
5 k 10 k
50 k 100 k
Load Resistance R
L
()
Load Resistance R
L
()
FREQUENCY RESPONSE
I
F
= 5 mA,
V
CE
= 5 V
CTR (Relative Value)
1.2
LONG TERM CTR DEGRADATION
I
F
= 5 mA (TYP.)
1.0
0.8
0.6
0.4
0.2
T
A
= 60 ˚C
0
Normalized Gain G
V
–5
–10
–15
–20
T
A
= 25 ˚C
100
R
L
= 1 k
300
0.5 1
2
5
10 20
50 100 200 500
0
10
2
10
3
Time (Hr)
10
4
10
5
Frequency f (kHz)
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5
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