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MM3Z6V8CW

器件型号:MM3Z6V8CW
器件类别:分立半导体    稳压二极管   
厂商:德昌
1976年,德昌企业公司于香港正式注册成立,主力从事电子产品国际贸易。为配合业务不断发展,于1985年更名为德昌电子有限公司。经不断努力,公司逐步将业务扩展至半导体制造领域。为融合制造业务的扩展及集团化的发展方针,于1997年更名为德昌电子(集团)有限公司,成为一家集生产和贸易为一体的综合性国际企业,全资附属机构包括汕尾德昌电子有限公司和德昌半导体有限公司。
厂商官网:http://www.takcheong.com
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器件描述

精度:±5% 稳压值(典型值):6.8V 反向漏电流:1.8uA @ 4V 最大功率:200mW 6.8V,200mW

参数
参数名称属性值
属性参数值
商品目录稳压二极管
精度±5%
稳压值(典型值)6.8V
反向漏电流1.8uA @ 4V
最大功率200mW

MM3Z6V8CW产品介绍

TAK CHEONG
®
SEMICONDUCTOR
200mW SOD-323 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
Zener Voltage Regulators
Absolute Maximum Ratings
Symbol
P
D
T
STG
T
OPR
Power Dissipation
Storage Temperature Range
Operating Temperature Range
T
A
= 25°C unless otherwise noted
Value
200
-65 to +150
-65 to +150
Units
mW
°C
°C
SOD-323 Flat Lead
Green Product
Parameter
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Wide Zener Voltage Range Selection, 2.0V to 75V
VZ Tolerance Selection of ±5% (C Series)
Flat Lead SOD-323 Small Outline Plastic Package
Surface Device Type Mounting
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Band Indicates Cathode
ELECTRICAL SYMBOL
Cathode
Anode
Electrical Characteristics
Device
Type
MM3Z2V0CW
MM3Z2V2CW
MM3Z2V4CW
MM3Z2V7CW
MM3Z3V0CW
MM3Z3V3CW
MM3Z3V6CW
MM3Z3V9CW
MM3Z4V3CW
MM3Z4V7CW
MM3Z5V1CW
MM3Z5V6CW
MM3Z6V2CW
MM3Z6V8CW
MM3Z7V5CW
MM3Z8V2CW
MM3Z9V1CW
MM3Z10VCW
MM3Z11VCW
MM3Z12VCW
Device
Marking
Z+
Z⊥
Z0
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
ZA
ZB
ZC
ZD
ZE
ZF
ZG
ZH
T
A
= 25°C unless otherwise noted
V
Z
@ I
ZT
(Volts)
Min
1.90
2.09
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.11
7.79
8.65
9.50
10.45
11.40
Nom
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
Max
2.10
2.31
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.86
8.61
9.56
10.50
11.55
12.60
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Z
ZT
@ I
ZT
(Ω)
Max
100
100
100
100
100
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Z
ZK
@ I
ZK
(Ω)
Max
564
564
564
564
564
564
564
564
564
470
451
376
141
75
75
75
94
141
141
141
I
R
@ V
R
(μA)
Max
120
120
45
18
9
4.5
4.5
2.7
2.7
2.7
1.8
0.9
2.7
1.8
0.9
0.63
0.45
0.18
0.09
0.09
V
R
(Volts)
0.5
0.7
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
Number: DB-087
January 2013, Revision E
Page 1
MM3Z2V0CW through MM3Z75VCW
TAK CHEONG
Electrical Characteristics
Device
Type
MM3Z13VCW
MM3Z15VCW
MM3Z16VCW
MM3Z18VCW
MM3Z20VCW
MM3Z22VCW
MM3Z24VCW
MM3Z27VCW
MM3Z30VCW
MM3Z33VCW
MM3Z36VCW
MM3Z39VCW
MM3Z43VCW
MM3Z47VCW
MM3Z51VCW
MM3Z56VCW
MM3Z62VCW
MM3Z68VCW
MM3Z75VCW
Device
Marking
ZJ
ZK
ZL
ZM
ZN
ZP
ZR
ZS
ZT
ZU
ZV
ZW
ZX
ZY
Z−
Z=
Z≡
Z>
Z<
®
SEMICONDUCTOR
T
A
= 25°C unless otherwise noted
V
Z
@ I
ZT
(Volts)
Min
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
Nom
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Max
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
I
ZT
(mA)
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Z
ZT
@ I
ZT
(Ω)
Max
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
I
ZK
(mA)
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
160
188
188
212
212
235
235
282
282
306
329
329
353
353
376
400
423
447
470
I
R
@ V
R
(μA)
Max
0.09
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
V
R
(Volts)
8
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.0
25.2
27.3
30.1
33.0
35.7
39.2
43.4
47.6
52.5
V
F
Forward Voltage = 1 V Maximum @
I
F
= 10 mA for all types
Notes:
1.
2.
3.
4.
The Zener Voltage (V
Z
) is tested under pulse condition of 10mS.
The device numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter
voltage tolerances, contact your nearest Tak Cheong Electronics representative.
The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to
10% of the dc zener current (I
ZT
or
I
ZK
) is superimposed to
I
ZT
or
I
ZK.
Number: DB-087
January 2013, Revision E
Page 2
TAK CHEONG
®
SEMICONDUCTOR
RATING AND CHARACTERISTIC CURVES
Fig.1 TYPICAL FORWARD VOLTAGE
Fig.2
EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
250
POWER PASSIPATION,mW
200
150
100
50
0
0
25
50
75
100
125
150
175
200
TEMPERATURE [
]
Fig.3 POWER DISSIPATION VS. AMBIENT TEMP.
Fig.4
TYPICAL CAPACITANCE
Fig.5 ZENER BREAKDOWN CHARACTERISTICS
Number: DB-087
January 2013, Revision E
Fig.6 ZENER BREAKDOWN CHARACTERISTICS
Page 3
TAK CHEONG
®
SEMICONDUCTOR
Fig.7 TYPICAL LEAKGE CURRENT
SOD-323 Package Outline
NOTES:
1. The above package outline is similar to JEITA SC-90.
2. Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions.
Number: DB-087
January 2013, Revision E
Page 4
TAK CHEONG
®
DISC LA I MER NOTIC E
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website
http://www.takcheong.com,
or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
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