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KIA50N03AD

器件型号:KIA50N03AD
器件类别:分立半导体    MOS(场效应管)   
厂商:KIA 半导体
深圳市可易亚半导体科技有限公司是一家专业从事中、大功率场效应管、快速恢复二极管、三端稳压管开发设计,集研发、生产和销售为一体的国家高新技术企业。
厂商官网:http://www.kiaic.com/page/qiyejianjie.htm
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器件描述

漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):50A 栅源极阈值电压:3V @ 250uA 漏源导通电阻:9mΩ @ 30A,10V 最大功率耗散(Ta=25°C):60W 类型:N沟道 N沟道 场效应管 30V 50A

参数
参数名称属性值
属性参数值
漏源电压(Vdss)30V
连续漏极电流(Id)(25°C 时)50A
栅源极阈值电压3V @ 250uA
漏源导通电阻9mΩ @ 30A,10V
最大功率耗散(Ta=25°C)60W
类型N沟道

KIA50N03AD产品介绍

KIA
SEMICONDUCTORS
50 Amps, 30 Volts
N-CHANNEL MOSFET
50N03
1.Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Fully characterized avalanche voltage and current
2.Applications
V
DSS
=30V,R
DS(on)
=6.5mΩ,I
D
=50A
Vds=30V
R
DS(ON)
=6.5mΩ(Max.),VGS@10V,Ids@30A
R
DS(ON)
=9.5mΩ(Max.),VGS@4.5V,Ids@30A
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 3
Rev 1.0 JAN 2014
KIA
SEMICONDUCTORS
N-CHANNEL
ENHANCEMENT-MODE MOSFET
50N03
4.
Maximum ratings and thermal characteristics
Rating
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
1)
Maximum power dissipation
T
A
=25°C
T
A
=75°C
(Ta=25°C,unless otherwise notes)
Symbol
Value
Unit
V
DS
V
GS
I
D
I
DM
P
D
P
D
T
J
/T
STG
R
θJC
R
θJA
30
+20
50
200
60
23
-55 to 150
1.8
50
V
V
A
A
W
W
°C
°C/W
°C/W
Operating junction and storage temperature range
Junction-to-case thermal resistance
Junction-to ambient themal rasistance (PCB mount)
2)
Note:1.Repetitive rating:pulse width limited by the maximum junction temperation
2.1-in
2
2oz Cu PCB board
3.Guaranteed by design;not subject to production testing
5.
Ordering information
Part number
KIA50N03
Package
TO-251,TO-252,TO-220
6.
Typical application circuit
2 of 3
Rev 1.0 JAN 2014
KIA
SEMICONDUCTORS
N-CHANNEL
ENHANCEMENT-MODE MOSFET
50N03
7.
Electrical characteristics
(Ta=25°C,unless otherwise notes)
Min.
Typ.
Max.
Units
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
9.5
6.5
1.8
12
-
-
10
3.5
3
12
4
32
6
1180
270
145
-
13.0
9.0
3
-
1
+100
25
10
65
-
-
-
-
-
-
-
V
V
S
μA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Parameter
Static
Drain-source breakdown voltage
Drain-source on-state
rasistancem
Gate threshold voltage
Forward transconductance
Zero gate voltage drain current
Gate-source forward leakage
Dynamic
3)
Total gate charge
Gate-source charge
Gate-drain (“miller”)charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Test conditions
V
GS
=0V,I
D
=250μA
V
GS
=4.5V,I
D
=30A
V
GS
=10V,I
D
=30A
V
DS
=V
GS
,I
D
=-250μA
V
DS
=15V,I
D
=15A
V
DS
=25V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
Q
g
Q
gs
Q
gd
t
d(off)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
I
D
=35A
V
DS
=15V
V
GS
=10V
V
DD
=15V
I
D
=1A
R
G
=6Ω
R
L
=15Ω
V
GEN
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
Source-drain diode
Parameter
Diode forward voltage
Max.diode forward current
Symbol
V
SD
I
S
Test condition
I
S
=20A,V
GS
=0V
Min.
-
-
Typ.
0.87
-
Max.
1.5
20
Units
V
A
Notes:Pulse width<300μs,duty cycle<2%
3 of 3
Rev 1.0 JAN 2014
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