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1H05

器件型号:1H05
器件类别:分立半导体    MOS(场效应管)   
厂商:HL(豪林)
深圳市豪林电子有限公司成立于2002年,公司成立之初为代理经销模式,同时也是长电品牌第一大代理经销商;专业肖特基、快恢复二极管、MOSFET、1300高压开关三极管、集成电路、用优质量,优单价,优服务,优速度,在华南地区赢取了代理经销的最佳业绩。
厂商官网:http://www.szhaolin.com
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器件描述

漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):5A 栅源极阈值电压:2.8V @ 250uA 漏源导通电阻:234mΩ @ 5A,10V 最大功率耗散(Ta=25°C):- 类型:N沟道 N沟道,100V,5A,234mΩ@10V

参数
参数名称属性值
属性参数值
商品目录MOS(场效应管)
漏源电压(Vdss)100V
连续漏极电流(Id)(25°C 时)5A
栅源极阈值电压2.8V @ 250uA
漏源导通电阻234mΩ @ 5A,10V
最大功率耗散(Ta=25°C)-
类型N沟道

1H05产品介绍

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
1H05
V
(BR)DSS
100
V
N-Channel MOSFET
R
DS(on)
MAX
 
234mΩ
@10V
 
247mΩ
@
6V 
258mΩ
@
4.5V 
 
5A
1. GATE
2. SOURCE
3. DRAIN
I
D
SOT-23
FEATURE
TrenchFET Power MOSFET
Low R
DS(ON)
Surface Mount Package
APPLICATION
DC/DC Converters
Load Switch
LED Backlighting in LCD TVs
MARKING
Equivalent Circuit
1H05
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating:Pluse width limited by junction temperature.
Symbol
V
DS
V
GS
I
D
I
DM
*
R
θJA
T
J
T
STG
T
L
Value
100
±20
5
8
357
150
-55~+150
260
Unit
V
V
A
A
℃/W
1
A-3,Apr,2015
MOSFET ELECTRICAL CHARACTERISTICS
T
a
=25
unless otherwise specified
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage(note
1)
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS
= 0V, I
D
=250µA
V
DS
=100V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=5A
Drain-source on-resistance
(note 1)
R
DS(on)
V
GS
=4.5V, I
D
=1A
V
GS
=10V,I
D
=1A
Forward tranconductance
(note 1)
Diode forward voltage
(note 1)
DYNAMIC PARAMETERS
(note2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING PARAMETERS
(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Notes :
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=50V,V
GS
=4.5V,I
D
=1.6A
0.75
1.4
V
DD
=50V,V
GEN
=4.5V
R
L
=39Ω,R
G
=1Ω,I
D
=1.3A
45
39
26
20
5.8
ns
ns
ns
ns
nC
nC
nC
C
iss
C
oss
C
rss
R
g
F=1MHz
0.3
V
DS
=50V,V
GS
=0V,f =1MHz
190
22
13
2.8
pF
pF
pF
g
FS
V
SD
V
DS
=20V, I
D
=2.5A
I
S
=1.3A, V
GS
= 0V
2
1.2
1.2
100
1
±100
2.8
234
257
220
V
µA
nA
V
mΩ
mΩ
mΩ
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
2
A-3,Apr,2015
Typical Characteristics
Output Characteristics
Pulsed
9
4.5
10
Transfer Characteristics
5.0
V
DS
=3V
Pulsed
V
GS
=8V,10V,12V
8
4.0
(A)
7
6
5
4
3
2
1
0
0
1
2
3
4
5
(A)
DRAIN CURRENT
V
GS
=3.8V
I
D
3.5
3.0
2.5
2.0
1.5
1.0
DRAIN CURRENT
I
D
V
GS
=3.5V
T
a
=100
T
a
=25
V
GS
=3V
0.5
0.0
0
1
2
3
4
5
6
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
280
R
DS(ON)
——
Ta=25
Pulsed
I
D
900
R
DS(ON)
——
V
GS
800
(mΩ)
260
(mΩ)
R
DS(ON)
240
700
R
DS(ON)
600
I
D
=0.8A
Ta=100
Pulsed
ON-RESISTANCE
220
ON-RESISTANCE
VGS=4.5V
500
400
200
300
VGS=10V
180
VGS=6V
200
Ta=25
Pulsed
100
160
0
1
2
3
4
5
0
0
2
4
6
8
10
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
6
I
S
—— V
SD
Threshold Voltage
2.1
2.0
(V)
THRESHOLD VOLTAGE
Ta=100
Pulsed
V
TH
Ta=25
Pulsed
1.9
1.8
1
SOURCE CURRENT
I
S
(A)
0.1
I
D
=250uA
1.7
0.01
1.6
1.5
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.4
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(mV)
JUNCTION TEMPERATURE
T
J
(
)
3
A-3,Apr,2015
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
SOT-23 Suggested Pad Layout
4
A-3,Apr,2015
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