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MAX6003EUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6004EUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6001EUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6041AEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6002EUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6023EBT25+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6023EBT45+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6030AEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6030BEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6021BEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6025BEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6050BEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6012BEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6045AEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6023EBT30+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6023EBT12+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6012AEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6050AEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6025AEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6021AEUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6005EUR+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
MAX6002EUR/V+T Maxim Integrated voltage references ref='/w_low.html'>low-power ref='/w_low.html'>low-drop voltage ref 下载
BSZ065N06LS5 Infineon Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. 下载
BSZ146N10LS5 Infineon Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. 下载
BSZ099N06LS5 Infineon Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. 下载
BSZ096N10LS5 Infineon Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. 下载
BSC065N06LS5 Infineon Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. 下载
BSZ070N08LS5 Infineon Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. 下载
BSC094N06LS5 Infineon Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. 下载
BSC027N06LS5 Infineon Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. 下载

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