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TSFF5400-AS12

产品描述Infrared LED, 870nm
产品类别光电子/LED    光电   
文件大小132KB,共7页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数

TSFF5400-AS12概述

Infrared LED, 870nm

TSFF5400-AS12规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
Reach Compliance Codeunknown
最大正向电流0.1 A
最大正向电压3 V
安装特点THROUGH HOLE MOUNT
最高工作温度85 °C
最低工作温度-25 °C
峰值波长870 nm
最大反向电压5 V
半导体材料GaAlAs
光谱带宽4e-8 m
表面贴装NO
视角44 deg

TSFF5400-AS12文档预览

TSFF5400
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
TSFF5400 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
The new technology combines the high speed of DH-
GaAlAs with the efficiency of standard GaAlAs and
the low forward voltage of the standard GaAs technol-
ogy.
94 8390
Features
High modulation bandwidth (35 MHz)
Extra high radiant power and radiant intensity
Low forward voltage
Suitable for high pulse current operation
Standard T-1¾ (∅ 5 mm) package
Angle of half intensity
ϕ
= ± 22°
Peak wavelength
λ
p
= 870 nm
High reliability
Good spectral matching to Si photodetectors
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared video data transmission between Camcorder
and TV set.
Free air data transmission systems with high modu-
lation frequencies or high data transmission rate
requirements.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Forward current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
t
5 sec, 2 mm from case
t
p
/T = 0.5, t
p
= 100
µs
t
p
= 100
µs
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
300
1
250
100
- 25 to + 85
- 25 to + 85
260
300
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81016
Rev. 1.8, 08-Mar-05
www.vishay.com
1
TSFF5400
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Temp. Coefficient of V
F
Reverse Current
Junction capacitance
Test condition
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
µs
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
Symbol
V
F
V
F
TK
VF
I
R
C
j
160
Min
Typ.
1.45
2.5
-2.4
10
Max
1.6
3.0
VISHAY
Unit
V
V
mV/K
µA
pF
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Radiant Intensity
Radiant Power
Temp. Coefficient of
φ
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
λ
p
Rise Time
Fall Time
Cut-Off Frequency
Virtual Source Diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
Test condition
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
µs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
Symbol
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
∆λ
TKλ
p
t
r
t
f
f
c
Min
35
350
Typ.
60
600
40
-0.5
±22
870
40
0.2
10
10
35
2.1
Max
175
Unit
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
250
P
V
-
Power Dissipation ( mW )
250
I
F
- Forward Current ( mA )
200
200
150
R
thJA
100
150
100
R
thJA
50
0
50
0
0
20
40
60
80
100
0
94 8879
20
40
60
80
100
94 7957
T
amb
- Ambient Temperature (
°C
)
T
amb
- Ambient Temperature (
°C
)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.com
2
Document Number 81016
Rev. 1.8, 08-Mar-05
VISHAY
TSFF5400
Vishay Semiconductors
1000
I
F
-Forward Current ( mA )
t
p
/ T= 0.01
0.02
T
amb
<
50°
0.05
0.1
1000.0
I
e
- Radiant Intensity ( mW/sr )
100.0
10.0
0.2
0.5
1.0
100
0.01
16031
0.1
0.1
1.0
10
100
18220
1
10
100
1000
t
p
- Pulse Duration ( ms )
I
F
- Forward Current ( mA )
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
1000
1000
I
F
- Forward Current ( mA )
Φ
e
- Radiant Power ( mW )
100
100
10
10
1
1
0.1
0
16030
0.1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
F
- Forward Voltage ( V )
16033
1
10
100
1000
I
F
- Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Radiant Power vs. Forward Current
1.2
V
Frel
- Relative Forward Voltage
1.4
1.1
I
F
= 10 mA
I
e rel
;
Φ
e rel
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I
F
= 20 mA
1.0
0.9
0.8
0.7
0
20
40
60
80
100
16034
0
10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (
°C
)
94 7990
T
amb
- Ambient Temperature (
°
C )
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
Document Number 81016
Rev. 1.8, 08-Mar-05
www.vishay.com
3
TSFF5400
Vishay Semiconductors
VISHAY
1.25
Φ
e, rel
- Relative Radiant Power
1.0
0.75
0.5
0.25
0
780
880
λ
Wavelength ( nm )
980
95 9886
Figure 9. Relative Radiant Power vs. Wavelength
0
°
I
e rel
- Relative Radiant Intensity
10
°
20
°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8883
Figure 10. Relative Radiant Intensity vs. Angular Displacement
1
0
-1
-2
-3
-4
-5
10
14256
Φ
e,
I
e
-Attenuation (dB)
I
FDC
= 70mA
I
FAC
= 30mA pp
100
1000
10000
100000
f - Frequency ( kHz )
Figure 11. Attenuation vs. Frequency
www.vishay.com
4
Document Number 81016
Rev. 1.8, 08-Mar-05
VISHAY
Package Dimensions in mm
TSFF5400
Vishay Semiconductors
95 1
1260
Document Number 81016
Rev. 1.8, 08-Mar-05
www.vishay.com
5
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