VISHAY
GSOT03 to GSOT36
Vishay Semiconductors
ESD Protection Diode
Features
• Transient protection for data lines as per
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000-4-5 (Lightning) see I
PPM
below
1
3
2
18078
Mechanical Data
Case:
SOT-23 Plastic Package
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight:
8 mg
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak power dissipation
1)
Forward surge current
1)
Test condition
8/20
µs
pulse
8.3 ms single half sine-wave
Symbol
P
PK
I
FSM
Value
300
7
Unit
W
A
Non-repetitive current pulse and derated above T
A
= 25 °C,
for GSOT03, GSOT04, the peak power dissipation is 270 W
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Operation and storage
temperature range
Test condition
Symbol
T
stg
, T
J
Value
- 55 to + 150
Unit
°C
Electrical Characteristics
Part Number
Device
Marking
Code
Rated
Stand-off
Voltage
V
WM
V
Minimum
Breakdown
Voltage
V
BR
V
@ 1 mA
GSOT03
GSOT04
GSOT05
GSOT08
GSOT12
GSOT15
GSOT24
GSOT36
1)
Maximum
Clamping
Voltage
V
C
V
@ I
P
= 1 A
1)
6.5
8.5
9.8
13.4
19.0
24.0
43.0
60.0
@ I
P
= 5 A
1)
7.5
10.5
12.5
15.0
28.0
35.0
60.0
75.0
Maximum
Pulse Peak
Current
t
p
= 8/20
µs
I
PPM
A
18
17
17
15
12
10
5
2
Maximum
Leakage
Current
I
D
µA
@ V
WM
125
125
100
10
2
1
1
1
Maximum
Capacitance
C
pF
@ 0 V, 1 MHz
800
800
550
400
185
140
83
80
03
04
05
08
12
15
24
36
3.3
4.0
5.0
8.0
12.0
15.0
24.0
36.0
4.0
5.0
6.0
8.5
13.3
16.7
26.7
40
8/20
µs
waveform used (see figure 2)
Document Number 85807
Rev. 2, 02-Jun-03
www.vishay.com
1
GSOT03 to GSOT36
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
10000
VISHAY
P
PPM
- Peak Pulse Power (W)
1000
300W, 8/20
µ
s waveshape
100
10
0.1
1.0
17476
td - Pulse Duration (
µ
s )
10
100
1000
10000
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
110
I
PPM
- Peak Pulse Current, % I
RSM
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
t
d
= I
PP
2
20
25
30
17477
t - Time (
µ
s )
Figure 2. Pulse Waveform
100
Peak Pulse Power
8/20
µ
s
80
% Of Rated Power
60
40
20
Average Power
0
17478
0
25
50
75
100
125
150
T
L
- Lead Temperature
°C
Figure 3. Power Derating
www.vishay.com
2
Document Number 85807
Rev. 2, 02-Jun-03
VISHAY
Package Dimensions in Inches (mm)
GSOT03 to GSOT36
Vishay Semiconductors
.12 2 ( 3.1)
.110 (2.8)
.016 ( 0.4)
3
Top View
.056 ( 1.43 )
.052 ( 1.33 )
1
2
ma x . .004 ( 0.1)
.037( 0.95) .037( 0.95)
.007 ( 0.17 5)
.005 ( 0.125)
.045 ( 1.15)
.016 ( 0.4)
.016 ( 0.4)
.102 ( 2.6)
.094 ( 2.4)
17418
Document Number 85807
Rev. 2, 02-Jun-03
.037 ( 0.95)
www.vishay.com
3
GSOT03 to GSOT36
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85807
Rev. 2, 02-Jun-03
stm32/stm8
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