S29GLxxxM MirrorBit
TM
Flash Family
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 µm MirrorBit process technology
Data Sheet
DATA SHEET
For new designs, S29GL128N supersedes S29GL128M, and S29GL256N supersedes S29GL256M. These are factory-recommended product migrations. Please refer to the S29GLxxxN
Datasheet for specifications and ordering information.
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 µm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— 256 Mb: 512 32-Kword (64 Kbyte) sectors
— 128 Mb: 256 32-Kword (64 Kbyte) sectors
— 64 Mb (uniform sector models): 128 32-Kword
(64-Kbyte) sectors or 128 32 Kword sectors
— 64 Mb (boot sector models): 127 32-Kword
(64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
— 32 Mb (uniform sector models): 64 32-Kword
(64-Kbyte) sectors of 64 32-Kword sectors
— 32 Mb (boot sector models): 63 32-Kword (64 Kbyte)
sectors + 8 4-Kword (8-Kbyte) boot sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
100,000 erase cycles typical per sector
20-year data retention typical
Low power consumption (typical values at 3.0 V,
5 MHz)
— 18 mA typical active read current (64 Mb, 32 Mb)
— 25 mA typical active read current (256 Mb, 128 Mb)
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 40-pin TSOP
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
— 63-ball fine-pitch BGA
Software & Hardware Features
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
— Unlock Bypass Program command reduces overall
multiple-word programming time
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
charging code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Performance Characteristics
High performance
— 90 ns access time (128 Mb, 64 Mb, 32 Mb),
100 ns access time (256 Mb)
— 4-word/8-byte page read buffer
— 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
— 30 ns page read times (256 Mb)
— 16-word/32-byte write buffer
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Publication Number
S29GLxxxM
Revision
B
Amendment
4
Issue Date
January 10, 2005
D a t a
S h e e t
General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufac-
tured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as
16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608
words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or
8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304
bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide
data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using
the BYTE# input. The devices can be programmed either in the host system or in standard EPROM
programmers.
Access times as fast as 90 ns (S29GL128M, S29GL064M, S29GL032M) or 100 ns (S29GL256M)
are available. Note that each access time has a specific operating voltage range (V
CC
) as specified
in
Product Selector Guide
and
Ordering Information.
Package offerings include 40-pin TSOP, 48-
pin TSOP, 56-pin TSOP, 48-ball fine-pitch BGA, 63-ball fine-pitch BGA and 64-ball Fortified BGA,
depending on model number. Each device has separate chip enable (CE#), write enable (WE#)
and output enable (OE#) controls.
Each device requires only a
single 3.0 volt power supply
for both read and write functions. In
addition to a V
CC
input, a high-voltage
accelerated program (ACC)
feature provides shorter
programming times through increased current on the WP#/ACC input. This feature is intended to
facilitate factory throughput during system production, but may also be used in the field if desired.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash
standard.
Commands are written to the device using standard microprocessor write timing.
Write cycles also internally latch addresses and data needed for the programming and erase
operations.
The
sector erase architecture
allows memory sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The device is fully erased when shipped from the
factory.
Device programming and erasure are initiated through command sequences. Once a program or
erase operation starts, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle)
status bits
or monitor the
Ready/Busy# (RY/BY#)
output to determine whether the opera-
tion is complete. To facilitate programming, an
Unlock Bypass
mode reduces command
sequence overhead by requiring only two write cycles to program data instead of four.
Hardware data protection
measures include a low V
CC
detector that automatically inhibits write
operations during power transitions. The hardware sector protection feature disables both pro-
gram and erase operations in any combination of sectors of memory. This can be achieved in-
system or via programming equipment.
The
Erase Suspend/Erase Resume
feature allows the host system to pause an erase operation
in a given sector to read or program any other sector and then complete the erase operation. The
Program Suspend/Program Resume
feature enables the host system to pause a program op-
eration in a given sector to read any other sector and then complete the program operation.
The
hardware RESET# pin
terminates any operation in progress and resets the device, after
which it is then ready for a new operation. The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the device, enabling the host system to read boot-
up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode
when it detects specific voltage
levels on CE# and RESET#, or when addresses are stable for a specified period of time.
2
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00_B4 January 10, 2005
D a t a
S h e e t
The
Write Protect (WP#)
feature protects the first or last sector by asserting a logic low on the
WP#/ACC pin or WP# pin, depending on model number. The protected sector is still protected
even during accelerated programming.
The
Secured Silicon Sector
provides a 128-word/256-byte area for code or data that can be
permanently protected. Once this sector is protected, no further changes within the sector can
occur.
Spansion MirrorBit flash technology combines years of Flash memory manufacturing experience
to produce the highest levels of quality, reliability and cost effectiveness. The device electrically
erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed
using hot electron injection.
January 10, 2005 S29GLxxxM_00_B4
S29GLxxxM MirrorBit
TM
Flash Family
3
D a t a
S h e e t
Table of Contents
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .6
S29GL256M, S29GL128M, S29GL064M, and S29GL032M .........................6
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .8
For S29GL064M (model R0) only. ..................................................................13
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Logic Symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
S29GL064M (Models R1, R2, R8, R9) .............................................................17
S29GL064M (Models R3, R4) ...........................................................................17
S29GL064M (Model R5) .................................................................................... 18
S29GL064M (Model R6, R7) ............................................................................ 18
S29GL128M ............................................................................................................ 18
Ordering Information-S29GL032M . . . . . . . . . . . . 19
S29GL032M Standard Products ...................................................................... 19
Table 1. S29GL032M Ordering Options ................................. 20
Ordering Information-S29GL064M . . . . . . . . . . . . 21
S29GL064M Standard Products ...................................................................... 21
Table 2. S29GL064M Ordering Options ................................. 22
Table 21. S29GL032M (Models R3, R5) Sector Group Protection/
Unprotection Address Table .................................................44
Table 22. S29GL032M (Models R4, R6) Sector Group Protection/
Unprotection Address Table .................................................45
Table 23. S29GL064M (Model 00) Sector Group Protection/
Unprotection Address Table .................................................45
Table 24. S29GL064M (Models R1, R2, R8, R9) Sector Group
Protection/Unprotection Addresses .......................................45
Table 25. S29GL064M (Model R3) Sector Group Protection/
Unprotection Address Table .................................................45
Table 26. S29GL064M (Model R4) Sector Group Protection/
Unprotection Addresses ......................................................46
Table 27. S29GL064M (Model R5) Sector Group Protection/
Unprotection Addresses ......................................................46
Table 28. S29GL064M (Models R6, R7) Sector Group Protection/
Unprotection Address .........................................................46
Table 29. S29GL128M Sector Group Protection/Unprotection
Addresses .........................................................................46
Table 30. S29GL256M Sector Group Protection/Unprotection
Addresses .........................................................................47
Ordering Information-S29GL128M . . . . . . . . . . . . 23
Table 3. S29GL128M Ordering Options ................................. 24
Temporary Sector Group Unprotect .......................................................... 47
Figure 1. Temporary Sector Group Unprotect Operation .......... 48
Figure 2. In-System Sector Group Protect/Unprotect
Algorithms ........................................................................ 49
Ordering Information-S29GL256M . . . . . . . . . . . . 25
Table 4. S29GL256M Ordering Options ................................. 25
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .26
Table 5. Device Bus Operations ........................................... 26
Word/Byte Configuration ............................................................................... 26
Requirements for Reading Array Data ........................................................ 26
Page Mode Read ..................................................................................................27
Writing Commands/Command Sequences .................................................27
Write Buffer .....................................................................................................27
Accelerated Program Operation ...............................................................27
Autoselect Functions .................................................................................... 28
Standby Mode ...................................................................................................... 28
Automatic Sleep Mode ..................................................................................... 28
RESET#: Hardware Reset Pin ........................................................................ 28
Output Disable Mode ....................................................................................... 29
Table 6. S29GL032M (Model R0) Sector Addresses ................ 29
Table 7. S29GL032M (Models R1, R2) Sector Addresses ......... 29
Table 8. S29GL032M (Models R3, R5) Top Boot Sector
Addresses ........................................................................ 30
Table 9. S29GL032M (Models R4, R6) Bottom Boot
Sector Addresses .............................................................. 30
Table 10. S29GL064M (Model R0) Sector Addresses ............... 31
Table 11. S29GL064M (Models R1, R2, R8, R9) Sector
Addresses ........................................................................ 32
Table 12. S29GL064M (Model R3) Top Boot Sector Addresses
....................................................................................... 33
Table 13. S29GL064M (Model R4) Bottom Boot Sector
Addresses ........................................................................ 34
Table 14. S29GL064M (Model R5) Sector Addresses ............... 35
Table 15. S29GL064M (Model R6, R7) Sector Addresses ......... 36
Table 16. S29GL128M Sector Address Table ......................... 37
Table 17. S29GL256M Sector Address Table ......................... 39
Secured Silicon Sector Flash Memory Region ........................................... 50
Write Protect (WP#) ........................................................................................ 51
Hardware Data Protection .............................................................................. 51
Low VCC Write Inhibit ................................................................................ 51
Write Pulse “Glitch” Protection ................................................................ 51
Logical Inhibit .................................................................................................... 51
Power-Up Write Inhibit ................................................................................ 51
Common Flash Memory Interface (CFI) . . . . . . . 52
Table 31. CFI Query Identification String ...............................52
Table 32. System Interface String ........................................52
Table 33. Device Geometry Definition ...................................53
Table 34. Primary Vendor-Specific Extended Query ................53
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 54
Reading Array Data ........................................................................................... 54
Reset Command ................................................................................................. 54
Autoselect Command Sequence ................................................................... 55
Enter/Exit Secured Silicon Sector Command Sequence ......................... 55
Word Program Command Sequence ...................................................... 55
Unlock Bypass Command Sequence ........................................................ 56
Write Buffer Programming ......................................................................... 56
Accelerated Program .................................................................................... 57
Figure 3. Write Buffer Programming Operation....................... 58
Figure 4. Program Operation ............................................... 59
Program Suspend/Program Resume Command Sequence .................... 59
Figure 5. Program Suspend/Program Resume ........................ 60
Chip Erase Command Sequence ...................................................................60
Sector Erase Command Sequence ................................................................. 61
Figure 6. Erase Operation ................................................... 62
Autoselect Mode .................................................................................................43
Table 18. Autoselect Codes, (High Voltage Method) ............... 43
Erase Suspend/Erase Resume Commands .................................................. 62
Command Definitions ....................................................................................... 64
Write Operation Status ................................................................................... 66
DQ7: Data# Polling ........................................................................................... 66
RY/BY#: Ready/Busy# ....................................................................................... 67
Table 35. Command Definitions( x16 Mode, BYTE# = V
IH
) ......64
Table 36. Command Definitions (x8 Mode, BYTE# = V
IL
) .........65
Sector Group Protection and Unprotection ..............................................44
Table 19. S29GL032M (Model R0) Sector Group Protection/
Unprotection Addresses ...................................................... 44
Table 20. S29GL032M (Models R1, R2) Sector Group Protection/
Unprotection Addresses ...................................................... 44
Figure 7. Data# Polling Algorithm ........................................ 67
4
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00_B4 January 10, 2005
D a t a
S h e e t
DQ6: Toggle Bit I ................................................................................................67
Figure 8. Toggle Bit Algorithm.............................................. 69
DQ2: Toggle Bit II .............................................................................................. 69
DQ5: Exceeded Timing Limits ....................................................................... 70
DQ3: Sector Erase Timer ................................................................................ 70
DQ1: Write-to-Buffer Abort ............................................................................71
Table 37. Write Operation Status ......................................... 71
Figure 22. Temporary Sector Group Unprotect Timing
Diagram .......................................................................... 86
Figure 23. Sector Group Protect and Unprotect Timing
Diagram .......................................................................... 86
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . 72
Figure 9. Maximum Negative Overshoot Waveform ................. 72
Figure 10. Maximum Positive Overshoot Waveform................. 72
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 73
CMOS Compatible .............................................................................................73
Alternate CE# Controlled Erase and Program Operations
-S29GL256M ......................................................................................................... 87
Alternate CE# Controlled Erase and Program Operations
-S29GL128M ......................................................................................................... 87
Alternate CE# Controlled Erase and Program Operations
-S29GL064M ........................................................................................................88
Alternate CE# Controlled Erase and Program Operations
-S29GL032M .........................................................................................................88
Figure 24. Alternate CE# Controlled Write (Erase/
Program) Operation Timings................................................ 89
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . .74
Figure 11. Test Setup ......................................................... 74
Table 38. Test Specifications ............................................... 74
Key to Switching Waveforms . . . . . . . . . . . . . . . .74
Figure 12. Input Waveforms and Measurement Levels............. 74
Erase and Programming Performance . . . . . . . . 90
TSOP Pin and BGA Package Capacitance . . . . . .91
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 92
TS040—40-Pin Standard Thin Small Outline Package ............................ 92
TSR040—40-Pin Standard/Reverse Thin Small Outline Package
(TSOP) ................................................................................................................... 93
TS048—48-Pin Standard/Reverse Thin Small Outline Package
(TSOP) ................................................................................................................... 94
TSR048—48-Pin Standard/Reverse Thin Small Outline Package
(TSOP) ................................................................................................................... 95
TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline Package
(TSOP) ................................................................................................................... 96
LAA064—64-Ball Fortified Ball Grid Array (FBGA) ............................... 97
LAC064—64-Pin 18 x 12 mm Package ..........................................................98
FBA048—48-Pin 6.15 x 8.15 mm Package .................................................... 99
FBC048—48-Pin 8 x 9 mm Package .......................................................... 100
FBE063—63-Pin 12 x 11 mm Package .............................................................101
FPT-48P-M19 .......................................................................................................102
FPT-56P-M01 .......................................................................................................102
FBG048—48-Pin 8 x 6 mm Package ...........................................................103
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 75
Read-Only Operations-S29GL256M Only ...................................................75
Read-Only Operations-S29GL128M only .....................................................75
Read-Only Operations-S29GL064M Only ..................................................75
Read-Only Operations-S29GL032M only ....................................................76
Figure 13. Read Operation Timings ....................................... 76
Figure 14. Page Read Timings .............................................. 77
Hardware Reset (RESET#) ...............................................................................77
Figure 15. Reset Timings..................................................... 78
Erase and Program Operations-S29GL256M Only ...................................79
Erase and Program Operations-S29GL128M Only ..................................80
Erase and Program Operations-S29GL064M Only .................................. 81
Erase and Program Operations-S29GL032M Only .................................. 82
Figure 16. Program Operation Timings .................................. 83
Figure 17. Accelerated Program Timing Diagram .................... 83
Figure 18. Chip/Sector Erase Operation Timings ..................... 84
Figure 19. Data# Polling Timings (During Embedded Algorithms) .
84
Figure 20. Toggle Bit Timings (During Embedded Algorithms) .. 85
Figure 21. DQ2 vs. DQ6 ...................................................... 85
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 104
Temporary Sector Unprotect ........................................................................ 85
January 10, 2005 S29GLxxxM_00_B4
S29GLxxxM MirrorBit
TM
Flash Family
5
京公网安备 11010802033920号
Copyright © 2005-2023 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
