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US1DR2G

器件型号:US1DR2G
器件类别:分立半导体    二极管   
文件大小:222KB,共4页
厂商名称:Taiwan Semiconductor
厂商官网:http://www.taiwansemi.com/
标准:
下载文档

器件描述

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC, SMA, 2 PIN

参数
参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明GREEN, PLASTIC, SMA, 2 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
最大重复峰值反向电压200 V
最大反向恢复时间0.05 µs
表面贴装YES
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30

文档预览

US1A thru US1M
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- Ultrafast recovery time for high efficiency
- Built-in strain relief
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
High Efficient Surface Mount Rectifiers
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θjL
R
θjA
T
J
T
STG
50
15
27
75
- 55 to +150
- 55 to +150
1.0
5
150
75
10
O
US
1A
50
35
50
US
1B
100
70
100
US
1D
200
140
200
US
1G
400
280
400
1
30
US
1J
600
420
600
US
1K
800
560
800
US
1M
1000
700
1000
UNIT
V
V
V
A
A
1.7
V
μA
ns
pF
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
C
C
Document Number: DS_D1405051
Version: J14
US1A thru US1M
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
R3
R2
US1x
(Note 1)
Prefix "H"
M2
F3
F2
F4
N/A
E3
E2
Suffix "G"
PACKING CODE
GREEN COMPOUND
CODE
SMA
SMA
SMA
Folded SMA
Folded SMA
Folded SMA
Clip SMA
Clip SMA
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "x" defines voltage from 50V (US1A) to 1000V (US1M)
EXAMPLE
PREFERRED P/N
US1M R3
US1M R3G
US1MHR3
PART NO.
US1M
US1M
US1M
H
AEC-Q101
QUALIFIED
PACKING CODE
R3
R3
R3
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
PEAK FORWARD SURGE
CURRENT (A)
175
AVERAGE FORWARD CURRENT (A)
1.5
50
40
30
20
10
0
1
1
0.5
RESISTIVE OR
INDUCTIVE LOAD
0
0
25
50
75
100
125
o
C)
LEAD TEMPERATURE (
150
10
NUMBER OF CYCLES AT 60 Hz
100
INSTANTANEOUS FORWARD CURRENT
(A)
10
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT (μA)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
TJ=100℃
10
US1A-US1G
1
1
TJ=25℃
0.1
US1J-US1M
PULSE WIDTH=300μs
1% DUTY CYCLE
0.4
0.6
0.8
1
1.2
1.4
1.6
FORWARD VOLTAGE (V)
1.8
2
0.1
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1405051
Version: J14
US1A thru US1M
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
100
TRANSIENT THERMAL IMPEDANCE
A
(℃/W)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
US1A-US1G
CAPACITANCE (pF)
f=1.0MHz
Vsig=50mVp-p
10
10
US1J-US1M
1
1
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
T-PULSE DURATION(s)
10
100
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
1.27
4.06
2.29
1.99
0.90
4.95
0.10
0.15
Max
1.58
4.60
2.83
2.50
1.41
5.33
0.20
0.31
Unit (inch)
Min
0.050
0.160
0.090
0.078
0.035
0.195
0.004
0.006
Max
0.062
0.181
0.111
0.098
0.056
0.210
0.008
0.012
DIM.
A
B
C
D
E
F
G
H
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.68
1.52
3.93
2.41
5.45
Unit (inch)
0.066
0.060
0.155
0.095
0.215
MARKING DIAGRAM
P/N =
G=
YW =
F=
Document Number: DS_D1405051
Specific Device Code
Green Compound
Date Code
Factory Code
Version: J14
US1A thru US1M
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405051
Version: J14

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