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MCP6H01T-E/OTVAO

器件型号:MCP6H01T-E/OTVAO
器件类别:模拟混合信号IC    放大器电路   
厂商名称:Microchip(微芯科技)
厂商官网:https://www.microchip.com
标准:
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器件描述

Operational Amplifier, 1 Func, 3500uV Offset-Max, CMOS, PDSO5

参数
参数名称属性值
是否Rohs认证符合
厂商名称Microchip(微芯科技)
包装说明LSSOP,
Reach Compliance Codecompliant
放大器类型OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)0.025 µA
标称共模抑制比100 dB
最大输入失调电压3500 µV
JESD-30 代码R-PDSO-G5
长度2.9 mm
功能数量1
端子数量5
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码LSSOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)NOT SPECIFIED
筛选级别AEC-Q100
座面最大高度1.45 mm
标称压摆率0.8 V/us
供电电压上限17 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子形式GULL WING
端子节距0.95 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
标称均一增益带宽1200 kHz
宽度1.55 mm

文档预览

MCP6H01/2/4
1.2 MHz, 16V Op Amps
Features:
Input Offset Voltage: ±0.7 mV (typical)
Quiescent Current: 135 µA (typical)
Common Mode Rejection Ratio: 100 dB (typical)
Power Supply Rejection Ratio: 102 dB (typical)
Rail-to-Rail Output
Supply Voltage Range:
- Single-Supply Operation: 3.5V to 16V
- Dual-Supply Operation: ±1.75V to ±8V
Gain Bandwidth Product: 1.2 MHz (typical)
Slew Rate: 0.8V/µs (typical)
Unity Gain Stable
Extended Temperature Range: -40°C to +125°C
No Phase Reversal
Description:
Microchip’s MCP6H01/2/4 family of operational amplifi-
ers (op amps) has a wide supply voltage range of 3.5V
to 16V and rail-to-rail output operation. This family is
unity gain stable and has a gain bandwidth product of
1.2 MHz (typical). These devices operate with a
single-supply voltage as high as 16V, while only
drawing 135 µA/amplifier (typical) of quiescent current.
The MCP6H01/2/4 family is offered in single
(MCP6H01), dual (MCP6H02) and quad (MCP6H04)
configurations. All devices are fully specified in
extended temperature range from -40°C to +125°C.
Package Types
MCP6H01
SC70-5, SOT 23-5
V
OUT
1
V
SS
2
V
IN
+ 3
4 V
IN
5 V
DD
Applications:
Automotive Power Electronics
Industrial Control Equipment
Battery Powered Systems
Medical Diagnostic Instruments
MCP6H01
SOIC
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 NC
7 V
DD
6 V
OUT
5 NC
MCP6H02
SOIC
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
7 V
OUTB
6 V
INB
5 V
INB
+
Design Aids:
SPICE Macro Models
FilterLab
®
Software
MAPS (Microchip Advanced Part Selector)
Analog Demonstration and Evaluation Boards
Application Notes
MCP6H01
2x3 TDFN
NC 1
V
IN
– 2
V
IN
+ 3
EP
9
8 NC
7 V
DD
5 NC
MCP6H02
2x3 TDFN
V
OUTA
1
V
INA
– 2
V
SS
4
EP
9
8 V
DD
7 V
OUTB
6 V
INB
5 V
INB
+
Typical Application
R
1
V
1
V
DD
MCP6H01
V
OUT
R
2
V
REF
6 V
OUT
V
INA
+ 3
V
SS
4
MCP6H04
SOIC, TSSOP
V
OUTA
1
V
INA
– 2
V
INA
+ 3
14 V
OUTD
13 V
IND
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
8 V
OUTC
V
2
R
1
R
2
V
DD
4
V
INB
+ 5
V
INB
– 6
V
OUTB
7
Difference Amplifier
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2010-2011 Microchip Technology Inc.
DS22243D-page 1
MCP6H01/2/4
NOTES:
DS22243D-page 2
2010-2011 Microchip Technology Inc.
MCP6H01/2/4
1.0
1.1
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
4.1.2 “Input Voltage Limits”.
V
DD
– V
SS
..........................................................................17V
Current at Input Pins......................................................±2 mA
Analog Inputs (V
IN
+, V
IN
-)††.............V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ............V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage..........................................V
DD
– V
SS
Output Short-Circuit Current...................................continuous
Current at Output and Supply Pins ..............................±65 mA
Storage Temperature.....................................-65°C to +150°C
Maximum Junction Temperature (T
J
)...........................+150°C
ESD protection on all pins (HBM; MM) 2 kV; 200V
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +3.5V to +16V, V
SS
= GND, T
A
= +25°C,
V
CM
= V
DD
/2 – 1.4V, V
OUT
V
DD
/2, V
L
= V
DD
/2 and R
L
= 10 kto V
L
. (Refer to
Figure 1-1).
Parameters
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
I
B
I
B
I
B
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Voltage Range
Common Mode Rejection Ratio
V
CMR
CMRR
V
SS
0.3
78
82
84
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
A
OL
95
115
dB
0.2V < V
OUT
<(V
DD
0.2V)
93
98
100
V
DD
2.3
V
dB
dB
dB
V
CM
= -0.3V to 1.2V,
V
DD
= 3.5V
V
CM
= -0.3V to 2.7V,
V
DD
= 5V
V
CM
= -0.3V to 12.7V,
V
DD
= 15V
I
OS
Z
CM
Z
DIFF
10
600
10
±1
10 ||6
10
13
||6
13
Sym
V
OS
V
OS
/T
A
PSRR
Min
-3.5
87
Typ
±0.7
±2.5
102
Max
+3.5
25
Units
mV
Conditions
µV/°C T
A
= -40°C to +125°C
dB
pA
pA
nA
pA
||pF
||pF
T
A
= +85°C
T
A
= +125°C
2010-2011 Microchip Technology Inc.
DS22243D-page 3
MCP6H01/2/4
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +3.5V to +16V, V
SS
= GND, T
A
= +25°C,
V
CM
= V
DD
/2 – 1.4V, V
OUT
V
DD
/2, V
L
= V
DD
/2 and R
L
= 10 kto V
L
. (Refer to
Figure 1-1).
Parameters
Output
High-Level Output Voltage
V
OH
3.490
4.985
14.970
Low-Level Output Voltage
V
OL
Output Short-Circuit Current
I
SC
Power Supply
Supply Voltage
Quiescent Current per Amplifier
V
DD
I
Q
3.5
±1.75
125
130
135
16
±8
175
180
185
V
V
µA
µA
µA
Single-supply operation
Dual-supply operation
I
O
= 0, V
DD
= 3.5V
V
CM
= V
DD
/4
I
O
= 0, V
DD
= 5V
V
CM
= V
DD
/4
I
O
= 0, V
DD
= 15V
V
CM
= V
DD
/4
3.495
4.993
14.980
0.005
0.007
0.020
±27
±45
±50
0.010
0.015
0.030
V
V
V
V
V
V
mA
mA
mA
V
DD
= 3.5V
0.5V input overdrive
V
DD
= 5V
0.5V input overdrive
V
DD
= 15V
0.5V input overdrive
V
DD
= 3.5V
0.5 V input overdrive
V
DD
= 5V
0.5 V input overdrive
V
DD
= 15V
0.5 V input overdrive
V
DD
= 3.5V
V
DD
= 5V
V
DD
= 15V
Sym
Min
Typ
Max
Units
Conditions
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +3.5V to +16V, V
SS
= GND,
V
CM
= V
DD
/2 - 1.4V, V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kto V
L
and C
L
= 60 pF. (Refer to
Figure 1-1).
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
12
35
30
1.9
µVp-p
nV/Hz
nV/Hz
fA/Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
f = 1 kHz
GBWP
PM
SR
1.2
57
0.8
MHz
°C
V/µs
G = +1V/V
Sym
Min
Typ
Max
Units
Conditions
DS22243D-page 4
2010-2011 Microchip Technology Inc.
MCP6H01/2/4
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +3.5V to +16V and V
SS
= GND.
Parameters
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
JA
JA
JA
JA
JA
JA
331
256
41
149.5
95.3
100
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
-40
-65
+125
+150
°C
°C
Note 1
Sym
Min
Typ
Max
Units
Conditions
Note 1:
The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +150°C.
1.2
Test Circuits
C
F
6.8 pF
R
G
100 k
V
P
V
IN+
MCP6H0X
V
IN–
V
M
R
G
100 k
R
F
100 k
C
F
6.8 pF
V
OUT
R
L
10 k
C
L
60 pF
C
B1
100 nF
R
F
100 k
V
DD
V
DD
/2
The circuit used for most DC and AC tests is shown in
Figure 1-1.
This circuit can independently set V
CM
and
V
OUT
(refer to
Equation 1-1).
Note that V
CM
is not the
circuit’s common mode voltage ((V
P
+ V
M
)/2), and that
V
OST
includes V
OS
plus the effects (on the input offset
error, V
OST
) of temperature, CMRR, PSRR and A
OL
.
EQUATION 1-1:
G
DM
=
R
F
R
G
V
CM
=
V
P
+
V
DD
2
 
2
V
OST
=
V
IN–
V
IN+
V
OUT
=
V
DD
2
+
V
P
V
M
+
V
OST
 
1
+
G
DM
Where:
G
DM
= Differential Mode Gain
V
CM
= Op Amp’s Common Mode
Input Voltage
V
OST
= Op Amp’s Total Input Offset
Voltage
(V/V)
(V)
(mV)
C
B2
1 µF
V
L
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
2010-2011 Microchip Technology Inc.
DS22243D-page 5
与MCP6H01T-E/OTVAO相近的元器件有:MCP6H04-E/SL、MCP6H02-E/SN、MCP6H02T-E/MNY、MCP6H02T-E/SN、MCP6H04T-E/SLVAO、MCP6H04T-E/STVAO、MCP6H02-E/SNVAO、MCP6H02T-E/SNVAO。描述及对比如下:
型号 MCP6H01T-E/OTVAO MCP6H04-E/SL MCP6H02-E/SN MCP6H02T-E/MNY MCP6H02T-E/SN MCP6H04T-E/SLVAO MCP6H04T-E/STVAO MCP6H02-E/SNVAO MCP6H02T-E/SNVAO
描述 Operational Amplifier, 1 Func, 3500uV Offset-Max, CMOS, PDSO5 增益带宽积(GBP):1.2MHz 放大器组数:4 运放类型:General Purpose 各通道功耗:- 压摆率(SR):0.8 V/us 电源电压:3.5V ~ 16V, ±1.75V ~ 8V 增益带宽积(GBP):1.2MHz 放大器组数:2 运放类型:General Purpose 各通道功耗:- 压摆率(SR):0.8 V/us 电源电压:3.5V ~ 16V, ±1.75V ~ 8V 增益带宽积(GBP):1.2MHz 放大器组数:2 运放类型:General Purpose 各通道功耗:- 压摆率(SR):0.8 V/us 电源电压:3.5V ~ 16V, ±1.75V ~ 8V 增益带宽积(GBP):1.2MHz 放大器组数:2 运放类型:General Purpose 各通道功耗:135uA 压摆率(SR):0.8 V/us 电源电压:3.5V ~ 16V, ±1.75V ~ 8V Operational Amplifier, 4 Func, 3500uV Offset-Max, CMOS, PDSO14 Operational Amplifier, 4 Func, 3500uV Offset-Max, CMOS, PDSO14 Operational Amplifier, 2 Func, 3500uV Offset-Max, CMOS, PDSO8 Operational Amplifier, 2 Func, 3500uV Offset-Max, CMOS, PDSO8
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合
包装说明 LSSOP, SOP, SOP14,.25 SOP, SOP8,.25 HVSON, SOLCC8,.11,20 SOP, SOP8,.25 SOP, TSSOP, SOP, SOP,
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compli compli
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB) 0.025 µA 0.025 µA 0.025 µA 0.025 µA 0.025 µA 0.025 µA 0.025 µA 0.025 µA 0.025 µA
标称共模抑制比 100 dB 100 dB 100 dB 100 dB 100 dB 100 dB 100 dB 100 dB 100 dB
最大输入失调电压 3500 µV 3500 µV 3500 µV 3500 µV 3500 µV 3500 µV 3500 µV 3500 µV 3500 µV
JESD-30 代码 R-PDSO-G5 R-PDSO-G14 R-PDSO-G8 R-PDSO-N8 R-PDSO-G8 R-PDSO-G14 R-PDSO-G14 R-PDSO-G8 R-PDSO-G8
长度 2.9 mm 8.65 mm 4.9 mm 3 mm 4.9 mm 8.65 mm 5 mm 4.9 mm 4.9 mm
功能数量 1 4 2 2 2 4 4 2 2
端子数量 5 14 8 8 8 14 14 8 8
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LSSOP SOP SOP HVSON SOP SOP TSSOP SOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, LOW PROFILE, SHRINK PITCH SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED 260 NOT SPECIFIED 260 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
座面最大高度 1.45 mm 1.75 mm 1.75 mm 0.8 mm 1.75 mm 1.75 mm 1.2 mm 1.75 mm 1.75 mm
标称压摆率 0.8 V/us 0.8 V/us 0.8 V/us 0.8 V/us 0.8 V/us 0.8 V/us 0.8 V/us 0.8 V/us 0.8 V/us
供电电压上限 17 V 17 V 17 V 17 V 17 V 17 V 17 V 17 V 17 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子形式 GULL WING GULL WING GULL WING NO LEAD GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.95 mm 1.27 mm 1.27 mm 0.5 mm 1.27 mm 1.27 mm 0.65 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 40 NOT SPECIFIED 40 40 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
标称均一增益带宽 1200 kHz 1200 kHz 1200 kHz 1200 kHz 1200 kHz 1200 kHz 1200 kHz 1200 kHz 1200 kHz
宽度 1.55 mm 3.9 mm 3.9 mm 2 mm 3.9 mm 3.9 mm 4.4 mm 3.9 mm 3.9 mm
厂商名称 Microchip(微芯科技) - Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技)
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