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TST20H150CWMC0

器件型号:TST20H150CWMC0
器件类别:分立半导体    二极管   
厂商名称:Taiwan Semiconductor
厂商官网:http://www.taiwansemi.com/
下载文档

器件描述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 150V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

参数
参数名称属性值
厂商名称Taiwan Semiconductor
包装说明R-PSFM-T3
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOWER POWER LOSS
应用EFFICIENCY
外壳连接ISOLATED
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.9 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流120 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压150 V
最大反向电流100 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

文档预览

TST20H150CW thru TST20H200CW
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N with suffix "M" on P/N - commercial grade
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
Typ.
I
F
= 5A
Instantaneous forward voltage per diode
( Note1 )
I
F
= 10A
I
F
= 5A
I
F
= 10A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
F
V
F
I
R
R
θJC
T
J
T
STG
0.72
0.81
0.58
0.66
-
3
Max.
-
0.90
-
0.75
100
15.0
3
- 55 to +150
- 55 to +150
TST20H150CW
150
20
10
120
10000
Typ.
0.77
0.83
0.62
0.68
-
3
Max.
-
0.93
-
0.78
100
15
O
TST20H200CW
200
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
V
μA
mA
C/W
O
O
C
C
Document Number: DS_D1408067
Version: A14
TST20H150CW thru TST20H200CW
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TST20HxxxC
(Note 1)
PART NO.
SUFFIX
M
PACKING
CODE
C0
PACKING CODE
SUFFIX
G
ITO-220AB
50 / Tube
PACKAGE
PACKING
Note 1: "xxx" defines voltage from 150V (TST20H150CW) to 200V (TST20H200CW)
EXAMPLE
PREFERRED P/N
TST20H150CWMC0
TST20H150CWMC0G
PART NO.
TST20H150CW
TST20H150CW
PART NO.
SUFFIX
M
M
PACKING CODE
C0
C0
G
PACKING CODE
SUFFIX
DESCRIPTION
Commercial grade
Commercial grade
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25
o
C unless otherwise noted)
FIG. 1 FORWARD CURRENT DERATING CURVE
25
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100
TST20H150CW
10
T
J
=150
o
C
AVERAGE FORWARD CURRENT (A)
20
15
1
T
J
=125
o
C
T
J
=100
o
C
10
5
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
0.1
T
J
=25
o
C
0.01
0
0.2
0.4
0.6
0.8
1
0
0
25
50
75
100
125
150
CASE TEMPERATURE (
o
C)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
TST20H200CW
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
10
TST20H150CW
1
T
J
=150
o
C
T
J
=125
o
C
T
J
=100
o
C
10
T
J
=150
o
C
0.1
1
T
J
=125
o
C
0.01
0.1
T
J
=100
o
C
0.001
T
J
=25
o
C
0.01
0
0.2
0.4
0.6
0.8
1
0.0001
T
J
=25
o
C
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
Document Number: DS_D1407035
Version: A14
TST20H150CW thru TST20H200CW
Taiwan Semiconductor
FIG. 5 TYPICAL REVERSE CHARACTERISTICS
10
INSTANTANEOUS REVERSE CURRENT (mA)
FIG. 6 TYPICAL JUNCTION CAPACTIANCE
10000
TST20H200CW
1
0.1
0.01
0.001
0.0001
T
J
=150
o
C
TST20H150CW
JUNCTION CAPACITANCE (pF)
f=1.0MHz
Vsig=50mVp-p
T
J
=125
o
C
T
J
=100
o
C
1000
TST20H200CW
100
T
J
=25
o
C
0.00001
10
20
30
40
50
60
70
80
90
100
10
0.1
1
10
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
REVERSE VOLTAGE (V)
Document Number: DS_D1407035
Version: A14
TST20H150CW thru TST20H200CW
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
TO-220AB
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Unit (mm)
Min
-
2.54
2.80
0.68
3.54
14.60
13.19
2.41
4.42
1.14
5.84
2.20
0.35
0.95
Max
10.50
3.44
4.20
0.94
4.00
16.00
14.79
2.67
4.76
1.40
6.86
2.80
0.64
1.45
Unit (inch)
Min
-
0.100
0.110
0.027
0.139
0.575
0.519
0.095
0.174
0.045
0.230
0.087
0.014
0.037
Max
0.413
0.135
0.165
0.037
0.157
0.630
0.582
0.105
0.187
0.055
0.270
0.110
0.025
0.057
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1407035
Version:A14
TST20H150CW thru TST20H200CW
Taiwan Semiconductor
CREAT BY ART
Notice
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1407035
Version: A14

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