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Datasheet> 器件分类 > 分立半导体> 二极管> BAS70-06E3
 

BAS70-06E3

器件型号：BAS70-06E3
器件类别：分立半导体    二极管   
文件大小：122KB，共2页
厂商名称：Microsemi
厂商官网：https://www.microsemi.com
下载文档

器件描述

Rectifier Diode, Schottky, 2 Element, 0.2A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3

参数
参数名称属性值
厂商名称Microsemi
包装说明PLASTIC PACKAGE-3
Reach Compliance Codeunknown
ECCN代码EAR99
配置COMMON ANODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-G3
元件数量2
端子数量3
最大输出电流0.2 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大功率耗散0.2 W
最大重复峰值反向电压70 V
最大反向恢复时间0.005 µs
表面贴装YES
技术SCHOTTKY
端子形式GULL WING
端子位置DUAL

文档预览

BAS40
8700 E. Thomas Road
Scottsdale, AZ 85251
Tel: (480) 941-6300
Fax: (480) 947-1503
and
BAS70
SCHOTTKYarray™ SERIES
DESCRIPTION
Various configurations of Schottky barrier's diodes in SOT-23 packages are
provided for general-purpose use in high-speed switching, mixers and
detector applications. They may also be used for signal terminations at the
board level. This helps maintain signal integrity and counteract the
transmission-line effects with (PC) board traces by clamping over/and
undershoot from signal reflections with the schottky-low-threshold voltages.
This type of termination also does not depend on matching the transmission
line characteristic impedance, making it particularly useful where line
impedance is unknown or a variable. This method of termination can
control distortions of clock, data, address, and control lines as well as
provides a stabilizing effect on signal jitter. It can also significantly reduce
power consumption compared to standard resistor- based termination methods.
FEATURES
•
•
•
•
•
•
•
•
•
•
Protects from line to V
CC
and line to ground
Clamps within one forward diode threshold voltage
Low forward voltage and reverse recovery
characteristics
Bidirectional-low-forward available with “-04” suffix (Figure 2)
SOT-23 Surface Mount packaging for small foot print
PACKAGING
•
•
•
Tape & Reel EIA Standard 481
7 inch reel 3,000 pieces
13 inch reel 10,000 pieces
MAXIMUM RATINGS
Operating Temperatures: -55 C to +125 C
Storage Temperature: -55
0
C to +150
0
C
Power dissipation at T
amb
= 25
0
C is 200 mW
Forward Continuous Current at T
amb
= 25
0
C is 200 mA
Surge Forward Current At t
p
< 1 s, T
amb
= 25
0
C is 600 mA
0
0
MECHANICAL
•
•
•
Molded SOT-23 Surface Mount
Weight: .008 grams (approximate)
Body Marked with device number
ELECTRICAL CHARACTERISTICS PER DIODE @ 25
0
C Unless otherwise specified
Repetitive
Peak Reverse
Voltage
DEVICE
TYPE
DEVICE
FIGURE
MARKING
V
RRM
(VOLTS)
TYP
BAS40
BAS40-04
BAS40-05
BAS40-06
BAS70
BAS70-04
BAS70-05
BAS70-06
43
44
45
46
73
74
75
76
1
2
3
4
1
2
3
4
40
40
40
40
70
70
70
70
V
(BR)R
(VOLTS)
MIN
40
40
40
40
70
70
70
70
Reverse
Breakdown
Voltage
Tested with
10µA Pulse
Leakage Current
Pulse test
tp < 300µs @
For BAS40
V
R
= 30 V
For BAS70
V
R
= 50 V
I
R
(nA)
TYP
20
20
20
20
20
20
20
20
MAX
100
100
100
100
100
100
100
100
I
F
=1mA
380
380
380
380
410
410
410
410
1000
1000
1000
1000
I
F
=15mA I
F
=40mA
1000
1000
1000
1000
MAX
5
5
5
5
5
5
5
5
MAX
430
430
430
430
430
430
430
430
MAX
5
5
5
5
2
2
2
2
Forward Voltage Pulse Test
tp < 300µs
at I
F
= 1 mA
at I
F
= 40 mA
Reverse
Recovery
Time from
I
F
= 10 mA
through
I
R
=10mA to
I
R
=1mA
t
rr
(ns)
Thermal
Resistance
Junction to
Ambient Air
Capacitance
At V
R
= 0V
F = 1 MHz
C
tot
V
F
(mV)
R
thJA
(K/W)
pF
MSC1380.PDF
ISO 9001 CERTIFIED
REV C 2/02/2000
BAS40 and BAS70
Figure 1
Figure 2
Figure 3
Figure 4
PACKAGE OUTLINE
PAD DIMENSIONS
MSC1380.PDF ISO 9001 CERTIFIED
REV C 2/02/2000
查看更多（仅显示前5页内容，查看全部内容请下载文档。）>
与BAS70-06E3相近的元器件有：BAS40-06E3、BAS40-05E3、BAS40E3、BAS70-05E3、BAS70E3、BAS70-04E3。描述及对比如下：
型号 BAS70-06E3 BAS40-06E3 BAS40-05E3 BAS40E3 BAS70-05E3 BAS70E3 BAS70-04E3
描述 Rectifier Diode, Schottky, 2 Element, 0.2A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3 Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, PLASTIC PACKAGE-3 Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, PLASTIC PACKAGE-3 Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, PLASTIC PACKAGE-3 Rectifier Diode, Schottky, 2 Element, 0.2A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3 Rectifier Diode, Schottky, 1 Element, 0.2A, Silicon, PLASTIC, SOT-23, 3 PIN Rectifier Diode, Schottky, 2 Element, 0.2A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3
厂商名称 Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
包装说明 PLASTIC PACKAGE-3 R-PDSO-G3 R-PDSO-G3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC, SOT-23, 3 PIN PLASTIC PACKAGE-3
Reach Compliance Code unknown unknown unknown compliant unknown compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
配置 COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS SINGLE COMMON CATHODE, 2 ELEMENTS SINGLE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 2 2 2 1 2 1 2
端子数量 3 3 3 3 3 3 3
最大输出电流 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
最大功率耗散 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
最大反向恢复时间 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs
表面贴装 YES YES YES YES YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
最大重复峰值反向电压 70 V 40 V 40 V 40 V 70 V - 70 V

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