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MCM69R820CZP4R

器件型号:MCM69R820CZP4R
器件类别:存储    存储   
厂商名称:Motorola ( NXP )
厂商官网:https://www.nxp.com
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器件描述

4M Late Write 2.5 V I/O

参数
参数名称属性值
厂商名称Motorola ( NXP )
零件包装代码BGA
包装说明BGA,
针数119
Reach Compliance Codeunknow
ECCN代码3A991.B.2.A
最长访问时间2 ns
JESD-30 代码R-PBGA-B119
JESD-609代码e0
长度22 mm
内存密度4718592 bi
内存集成电路类型LATE-WRITE SRAM
内存宽度18
功能数量1
端子数量119
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX18
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
认证状态Not Qualified
座面最大高度2.4 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术BICMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距1.27 mm
端子位置BOTTOM
宽度14 mm

文档预览

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCM69R738C/D
4M Late Write 2.5 V I/O
The MCM69R738C/820C is a 4M–bit synchronous late write fast static RAM
designed to provide high performance in secondary cache and ATM switch,
Telecom, and other high speed memory applications. The MCM69R820C
(organized as 256K words by 18 bits) and the MCM69R738C (organized as 128K
words by 36 bits) are fabricated in Motorola’s high performance silicon gate
BiCMOS technology.
The differential clock (CK) inputs control the timing of read/write operations of
the RAM. At the rising edge of CK, all addresses, write enables, and synchronous
selects are registered. An internal buffer and special logic enable the memory to
accept write data on the rising edge of CK, a cycle after address and control
signals. Read data is also driven on the rising edge of CK.
The RAM uses 2.5 V inputs and outputs.
The synchronous write and byte enables allow writing to individual bytes or the
entire word.
Byte Write Control
Single 3.3 V +10%, –5% Operation
2.5 V I/O (VDDQ)
Register to Register Synchronous Operation
Asynchronous Output Enable
Boundary Scan (JTAG) IEEE 1149.1 Compatible
Differential Clock Inputs
Optional x18 or x36 Organization
MCM69R738C/820C–4 = 4 ns
MCM69R738C/820C–4.4 = 4.4 ns
MCM69R738C/820C–5 = 5 ns
MCM69R738C/820C–6 = 6 ns
Sleep Mode Operation (ZZ Pin)
119–Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Plastic Ball Grid Array
(PBGA) Package
MCM69R738C
MCM69R820C
ZP PACKAGE
PBGA
CASE 999–02
Freescale Semiconductor, Inc...
REV 1
8/13/99
©
Motorola, Inc. 1999
MOTOROLA FAST SRAM
For More Information On This Product,
Go to: www.freescale.com
MCM69R738C•MCM69R820C
1
Freescale Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
DATA IN
REGISTER
DQ
DATA OUT
REGISTER
SA
ADDRESS
REGISTERS
MEMORY
ARRAY
SW
SBx
SW
REGISTERS
CONTROL
LOGIC
CK
G
Freescale Semiconductor, Inc...
SS
SS
REGISTERS
PIN ASSIGNMENTS
TOP VIEW
MCM69R738C
1
A
B
C
D
E
DQc
F
G
DQc
H
J
K
L
DQd
M
VDDQ DQd
N
P
R
T
U
DQd
DQd
NC
NC
DQd
DQd
SA
NC
VSS
VSS
VSS
VSS
SA
TDI
SW
SA
SA
VDD
SA
TCK
VSS
VSS
VSS
VDD
SA
TDO
DQa VDDQ
DQa
DQa
SA
NC
DQa
DQa
NC
ZZ
N
P
R
T
NC
U
SA
SA
TDI
NC
TCK
SA
TDO
SA
ZZ
VDDQ TMS
NC VDDQ
DQd
SBd
CK
SBa
DQa
DQa
M
VDDQ DQb
DQb
NC
NC
NC
DQb
SA
VSS
VSS
VSS
VSS
SW
SA
SA
VDD
VSS
VSS
VSS
VDD
NC VDDQ
DQa
NC
SA
NC
DQa
NC
DQc
DQc
DQc
SBc
VSS
NC
VSS
NC
NC
VDD
CK
SBb
VSS
NC
VSS
DQb
DQb
DQb
DQb
H
J
K
L
DQb
NC
DQc
VSS
VSS
SS
G
VSS
VSS
DQb
DQb
F
G
NC
DQb
DQb
NC
SBb
VSS
NC
VSS
VSS
NC
NC
VDD
CK
CK
VSS
VSS
NC
VSS
SBa
NC
DQa
DQa
NC
VDDQ DQc
DQb VDDQ
VDDQ
NC
NC
DQc
2
SA
NC
SA
DQc
3
SA
SA
SA
VSS
4
NC
NC
VDD
NC
5
SA
SA
SA
VSS
6
SA
NC
SA
DQb
7
VDDQ
NC
NC
DQb
A
B
C
D
E
NC
VDDQ
DQb
NC
VSS
VSS
SS
G
VSS
VSS
NC
DQa
DQa VDDQ
1
VDDQ
NC
NC
DQb
2
SA
NC
SA
NC
MCM69R820C
3
SA
SA
SA
VSS
4
NC
NC
VDD
NC
5
SA
SA
SA
VSS
6
SA
NC
SA
DQa
7
VDDQ
NC
NC
NC
VDDQ VDD
DQd
DQd
VDD VDDQ
DQa
DQa
VDDQ VDD
NC
DQb
VDD VDDQ
NC
DQa
DQa
NC
VDDQ TMS
NC VDDQ
MCM69R738C•MCM69R820C
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA FAST SRAM
Freescale Semiconductor, Inc.
MCM69R738C PIN DESCRIPTIONS
PBGA Pin Locations
4K
4L
(a) 6K, 7K, 6L, 7L, 6M, 6N, 7N, 6P, 7P
(b) 6D, 7D, 6E, 7E, 6F, 6G, 7G, 6H, 7H
(c) 1D, 2D, 1E, 2E, 2F, 1G, 2G, 1H, 2H
(d) 1K, 2K, 1L, 2L, 2M, 1N, 2N, 1P, 2P
4F
2A, 3A, 5A, 6A, 3B, 5B, 2C, 3C, 5C, 6C,
4N, 4P, 2R, 6R, 3T, 4T, 5T
5L, 5G, 3G, 3L
(a), (b), (c), (d)
4E
Symbol
CK
CK
DQx
Type
Input
Input
I/O
Description
Address, data in, and control input register clock. Active high.
Address, data in, and control input register clock. Active low.
Synchronous Data I/O.
G
SA
SBx
Input
Input
Input
Output Enable: Asynchronous pin, active low.
Synchronous Address Inputs: Registered on the rising clock edge.
Synchronous Byte Write Enable: Enables writes to byte x in
conjunction with the SW input. Has no effect on read cycles, active
low.
Synchronous Chip Enable: Registered on the rising clock edge,
active low.
Synchronous Write: Registered on the rising clock edge, active low.
Writes all enabled bytes.
Test Clock (JTAG).
Test Data In (JTAG).
Test Data Out (JTAG).
Test Mode Select (JTAG).
Enables sleep mode, active high.
Core Power Supply.
Output Power Supply: Provides operating power for output buffers.
Ground.
No Connection: There is no connection to the chip.
Note: 3J and 5J are tied common.
SS
SW
TCK
TDI
TDO
TMS
ZZ
VDD
VDDQ
VSS
NC
Input
Input
Input
Input
Output
Input
Input
Supply
Supply
Supply
Freescale Semiconductor, Inc...
4M
4U
3U
5U
2U
7T
4C, 2J, 4J, 6J, 4R, 5R
1A, 7A, 1F, 7F, 1J, 7J, 1M, 7M, 1U, 7U
3D, 5D, 3E, 5E, 3F, 5F, 3H, 5H, 3K, 5K,
3M, 5M, 3N, 5N, 3P, 5P, 3R
4A, 1B, 2B, 4B, 6B, 7B, 1C, 7C, 4D, 4G,
4H, 3J, 5J, 1R, 7R, 1T, 2T, 6T, 6U
MOTOROLA FAST SRAM
For More Information On This Product,
Go to: www.freescale.com
MCM69R738C•MCM69R820C
3
Freescale Semiconductor, Inc.
MCM69R820C PIN DESCRIPTIONS
PBGA Pin Locations
4K
4L
(a) 6D, 7E, 6F, 7G, 6H, 7K, 6L, 6N, 7P
(b) 1D, 2E, 2G, 1H, 2K, 1L, 2M, 1N, 2P
4F
2A, 3A, 5A, 6A, 3B, 5B, 2C, 3C, 5C, 6C,
4N, 4P, 2R, 6R, 2T, 3T, 5T, 6T
5L, 3G
(a), (b)
4E
4M
Symbol
CK
CK
DQx
G
SA
SBx
Type
Input
Input
I/O
Input
Input
Input
Description
Address, data in, and control input register clock. Active high.
Address, data in, and control input register clock. Active low.
Synchronous Data I/O.
Output Enable: Asynchronous pin, active low.
Synchronous Address Inputs: Registered on the rising clock edge.
Synchronous Byte Write Enable: Enables writes to byte x in
conjunction with the SW input. Has no effect on read cycles, active
low.
Synchronous Chip Enable: Registered on the rising clock edge, active
low.
Synchronous Write: Registered on the rising clock edge, active low.
Writes all enabled bytes.
Test Clock (JTAG).
Test Data In (JTAG).
Test Data Out (JTAG).
Test Mode Select (JTAG).
Enables sleep mode, active high.
Core Power Supply.
Output Power Supply: Provides operating power for output buffers.
Ground.
No Connection: There is no connection to the chip.
Note: 3J and 5J are tied common.
SS
SW
TCK
TDI
TDO
TMS
ZZ
VDD
VDDQ
VSS
NC
Input
Input
Input
Input
Output
Input
Input
Supply
Supply
Supply
Freescale Semiconductor, Inc...
4U
3U
5U
2U
7T
4C, 2J, 4J, 6J, 4R, 5R
1A, 7A, 1F, 7F, 1J, 7J, 1M, 7M, 1U, 7U
3D, 5D, 3E, 5E, 3F, 5F, 5G, 3H, 5H, 3K,
5K, 3L, 3M, 5M, 3N, 5N, 3P, 5P, 3R
4A, 1B, 2B, 4B, 6B, 7B, 1C, 7C, 2D, 4D,
7D, 1E, 6E, 2F, 1G, 4G, 6G, 2H, 4H, 7H,
3J, 5J, 1K, 6K, 2L, 7L, 6M, 2N, 7N, 1P,
6P, 1R, 7R, 1T, 4T, 6U
MCM69R738C•MCM69R820C
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA FAST SRAM
Freescale Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS
(Voltages Referenced to VSS, See Note)
Rating
Core Supply Voltage
Output Supply Voltage
Voltage On Any Pin
Input Current (per I/O)
Output Current (per I/O)
Operating Temperature
Temperature Under Bias
Storage Temperature
Symbol
VDD
VDDQ
Vin
Iin
Iout
TA
Tbias
Tstg
Value
–0.5 to 4.6
–0.5 to VDD + 0.5
–0.5 to VDD + 0.5
±50
±70
0 to 70
–10 to 85
–55 to 125
Unit
V
V
V
mA
mA
°C
°C
°C
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
This BiCMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.
This device contains circuitry that will ensure
the output devices are in High–Z at power up.
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
Freescale Semiconductor, Inc...
PBGA PACKAGE THERMAL CHARACTERISTICS
Rating
Junction to Ambient (Still Air)
Junction to Ambient (@200 ft/min)
Junction to Ambient (@200 ft/min)
Junction to Board (Bottom)
Junction to Case (Top)
Single–Layer Board
Four–Layer Board
Symbol
R
θJA
R
θJA
R
θJA
R
θJB
R
θJC
Max
53
38
22
14
5
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
3
4
Notes
1, 2
1, 2
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC–883
Method 1012.1).
CLOCK TRUTH TABLE
K
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
X
ZZ
L
L
L
L
L
L
L
L
L
H
SS
L
L
L
L
L
L
L
H
H
X
SW
H
L
L
L
L
L
L
H
L
X
SBa
X
L
H
H
H
L
H
X
X
X
SBb
X
H
L
H
H
L
H
X
X
X
SBc
X
H
H
L
H
L
H
X
X
X
SBd
X
H
H
H
L
L
H
X
X
X
DQ (n)
X
High–Z
High–Z
High–Z
High–Z
High–Z
High–Z
X
High–Z
High–Z
DQ (n + 1)
Dout 0 – 35
Din 0 – 8
Din 9 – 17
Din 18 – 26
Din 27 – 35
Din 0 – 35
High–Z
High–Z
High–Z
High–Z
Mode
Read Cycle All Bytes
Write Cycle 1st Byte
Write Cycle 2nd Byte
Write Cycle 3rd Byte
Write Cycle 4th Byte
Write Cycle All Bytes
Abort Write Cycle
Deselect Cycle
Deselect Cycle
Sleep Mode
MOTOROLA FAST SRAM
For More Information On This Product,
Go to: www.freescale.com
MCM69R738C•MCM69R820C
5
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