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CMLDM7003T

器件型号:CMLDM7003T
器件类别:分立半导体    晶体管   
文件大小:166KB,共2页
厂商名称:Central Semiconductor
标准:  
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器件描述

Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6

参数
参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Central Semiconductor
包装说明SMALL OUTLINE, R-PDSO-F6
针数6
Reach Compliance Codecompliant
ECCN代码EAR99
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压50 V
最大漏极电流 (ID)0.28 A
最大漏源导通电阻2.3 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)5 pF
JESD-30 代码R-PDSO-F6
JESD-609代码e3
湿度敏感等级1
元件数量2
端子数量6
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子面层MATTE TIN (315)
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间10
晶体管应用SWITCHING
晶体管元件材料SILICON

文档预览

CMLDM7003T
CMLDM7003TG*
SURFACE MOUNT PICOmini
TM
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
Central
TM
Semiconductor Corp.
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are dual
Enhancement-mode N-Channel Field Effect Transistors,
manufactured by the N-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. These devices offer low rDS(ON), low
VGS(th), and ESD protection up to 2kV.
MARKING CODES: CMLDM7003T:
C7T
CMLDM7003TG*: CTG
SOT-563 CASE
*
Device is
Halogen Free
by design
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IDM
PD
PD
PD
TJ, Tstg
Θ
JA
50
50
12
280
1.5
350
300
150
-65 to +150
357
UNITS
V
V
V
mA
A
mW
mW
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IGSSF, IGSSR
VGS=5.0V
50
IGSSF,
IGSSF,
IDSS
IGSSR
IGSSR
VGS=10V
VGS=12V
VDS=50V, VGS=0V
VGS=0V, ID=10μA
VDS=VGS, ID=250μA
VGS=0V, IS=115mA
VGS=1.8V,
VGS=2.5V,
VGS=5.0V,
ID=50mA
ID=50mA
ID=50mA
200
5.0
50
25
0.5
1.0
50
50
0.75
1.6
1.3
1.1
1.2
1.4
2.3
1.9
1.5
UNITS
nA
μA
μA
nA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
VDS
=10V,
ID=200mA
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm
2
R1 (8-January 2009)
Central
TM
Semiconductor Corp.
CMLDM7003T
CMLDM7003TG*
SURFACE MOUNT PICOmini
TM
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) GATE Q1
2) SOURCE Q1
3) DRAIN Q2
4) GATE Q2
5) SOURCE Q2
6) DRAIN Q1
MARKING CODES: CMLDM7003T: C7T
CMLDM7003TG*: CTG
*
Device is
Halogen Free
by design
R1 (8-January 2009)
与CMLDM7003T相近的元器件有:CMLDM7003TGTR、CMLDM7003TBK、CMLDM7003TGBK、CMLDM7003TTR。描述及对比如下:
型号 CMLDM7003T CMLDM7003TGTR CMLDM7003TBK CMLDM7003TGBK CMLDM7003TTR
描述 Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6 Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6 Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6 Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6 Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6
是否Rohs认证 符合 不符合 不符合 不符合 不符合
厂商名称 Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
包装说明 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 PACKAGE-6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
针数 6 6 6 6 6
Reach Compliance Code compliant not_compliant unknown not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压 50 V 50 V 50 V 50 V 50 V
最大漏极电流 (ID) 0.28 A 0.28 A 0.28 A 0.28 A 0.28 A
最大漏源导通电阻 2.3 Ω 2.3 Ω 2.3 Ω 2.3 Ω 2.3 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss) 5 pF 5 pF 5 pF 5 pF 5 pF
JESD-30 代码 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
元件数量 2 2 2 2 2
端子数量 6 6 6 6 6
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES
端子形式 FLAT FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 10 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING AMPLIFIER SWITCHING AMPLIFIER SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
JESD-609代码 e3 e0 - e0 e0
端子面层 MATTE TIN (315) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
最大漏极电流 (Abs) (ID) - 0.28 A 0.28 A 0.28 A 0.28 A
最大功率耗散 (Abs) - 0.35 W 0.35 W 0.35 W 0.35 W

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