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CMLDM7003T: 器件型号：CMLDM7003T; 器件类别：分立半导体晶体管; 文件大小：166KB，共2页; 厂商名称：Central Semiconductor; 标准：

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器件描述

Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6

参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-F6
针数	6
Reach Compliance Code	compliant
ECCN代码	EAR99
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	50 V
最大漏极电流 (ID)	0.28 A
最大漏源导通电阻	2.3 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	5 pF
JESD-30 代码	R-PDSO-F6
JESD-609代码	e3
湿度敏感等级	1
元件数量	2
端子数量	6
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子面层	MATTE TIN (315)
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	10
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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CMLDM7003T

CMLDM7003TG*

SURFACE MOUNT PICOmini

DUAL N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

Central

Semiconductor Corp.

DESCRIPTION:

These CENTRAL SEMICONDUCTOR devices are dual

Enhancement-mode N-Channel Field Effect Transistors,

manufactured by the N-Channel DMOS Process,

designed for high speed pulsed amplifier and driver

applications. These devices offer low rDS(ON), low

VGS(th), and ESD protection up to 2kV.

MARKING CODES: CMLDM7003T:

C7T

CMLDM7003TG*: CTG

SOT-563 CASE

Device is

Halogen Free

by design

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Maximum Pulsed Drain Current

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VDS

VDG

VGS

IDM

TJ, Tstg

280

1.5

350

300

150

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

IGSSF, IGSSR

VGS=5.0V

IGSSF,

IDSS

IGSSR

VGS=10V

VGS=12V

VDS=50V, VGS=0V

VGS=0V, ID=10μA

VDS=VGS, ID=250μA

VGS=0V, IS=115mA

VGS=1.8V,

VGS=2.5V,

VGS=5.0V,

ID=50mA

200

5.0

0.5

1.0

0.75

1.6

1.3

1.1

1.2

1.4

2.3

1.9

1.5

UNITS

μA

BVDSS

VGS(th)

VSD

rDS(ON)

gFS

Crss

Ciss

Coss

VDS

=10V,

ID=200mA

VDS=25V, VGS=0, f=1.0MHz

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm

R1 (8-January 2009)

Central

Semiconductor Corp.

CMLDM7003T

CMLDM7003TG*

SURFACE MOUNT PICOmini

DUAL N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

SOT-563 CASE - MECHANICAL OUTLINE

PIN CONFIGURATION

LEAD CODE:

1) GATE Q1

2) SOURCE Q1

3) DRAIN Q2

4) GATE Q2

5) SOURCE Q2

6) DRAIN Q1

MARKING CODES: CMLDM7003T: C7T

CMLDM7003TG*: CTG

Device is

Halogen Free

by design

R1 (8-January 2009)

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与CMLDM7003T相近的元器件有：CMLDM7003TGTR、CMLDM7003TBK、CMLDM7003TGBK、CMLDM7003TTR。描述及对比如下：

型号	CMLDM7003T	CMLDM7003TGTR	CMLDM7003TBK	CMLDM7003TGBK	CMLDM7003TTR
描述	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6
是否Rohs认证	符合	不符合	不符合	不符合	不符合
厂商名称	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	PACKAGE-6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
针数	6	6	6	6	6
Reach Compliance Code	compliant	not_compliant	unknown	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	50 V	50 V	50 V	50 V	50 V
最大漏极电流 (ID)	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A
最大漏源导通电阻	2.3 Ω	2.3 Ω	2.3 Ω	2.3 Ω	2.3 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	5 pF	5 pF	5 pF	5 pF	5 pF
JESD-30 代码	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
元件数量	2	2	2	2	2
端子数量	6	6	6	6	6
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	260	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	10	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	AMPLIFIER	SWITCHING	AMPLIFIER	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
JESD-609代码	e3	e0	-	e0	e0
端子面层	MATTE TIN (315)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
最大漏极电流 (Abs) (ID)	-	0.28 A	0.28 A	0.28 A	0.28 A
最大功率耗散 (Abs)	-	0.35 W	0.35 W	0.35 W	0.35 W

器件捷径: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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