NTMFS4935N
Power MOSFET
Features
30 V, 93 A, Single N−Channel, SO−8 FL
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
V
(BR)DSS
30 V
R
DS(ON)
MAX
3.2 mW @ 10 V
4.2 mW @ 4.5 V
93 A
I
D
MAX
Applications
•
CPU Power Delivery, DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s (Note 1)
Power Dissipation
R
qJA
≤
10 s
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
Steady
State
P
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
21.8
13.8
2.63
40
25
8.7
W
W
A
Unit
V
V
A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
I
D
13
8.2
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
P
D
I
D
0.93
93
59
W
A
4935N
AYWZZ
D
D
D
P
D
I
DM
I
Dmax
T
J
,
T
STG
I
S
dV/d
t
E
AS
48
275
100
−55
to
+150
44
6
110
W
A
A
°C
A
V/ns
mJ
= Assembly Location
= Year
= Work Week
= Lot Traceability
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
ORDERING INFORMATION
Device
NTMFS4935NT1G
NTMFS4935NCT1G
NTMFS4935NT3G
NTMFS4935NCT3G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Single Pulse Drain−to−Source Avalanche
Energy T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
I
L
= 47 A
pk
, L = 0.1 mH, R
G
= 25
W
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
May, 2012
−
Rev. 10
1
Publication Order Number:
NTMFS4935N/D
NTMFS4935N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
2.6
47.5
134.8
14.4
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
(transient)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSSt
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
g
FS
C
ISS
C
OSS
C
RSS
C
RSS
/
C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 1.5 V, I
D
= 15 A
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
16.3
20
27.5
6.6
ns
3579
1264
39
0.011
22
5.6
10.2
3.0
49.4
nC
nC
4850
1710
59
0.022
pF
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V, I
D(aval)
= 19.5 A,
T
case
= 25°C, t
transient
= 100 ns
30
34
15
1.0
10
±100
V
V
Symbol
Test Condition
Min
Typ
Max
Unit
mV/°C
mA
nA
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.2
1.63
4.0
2.7
2.7
3.7
3.7
32
2.2
V
mV/°C
3.2
mW
4.2
S
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTMFS4935N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.85
0.72
44.4
21.6
22.8
45
nC
ns
1.1
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
11.2
18.7
28.3
12.1
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.65
0.005
1.84
1.1
1.4
nH
nH
nH
W
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
NTMFS4935N
TYPICAL CHARACTERISTICS
180
160
I
D
, DRAIN CURRENT (A)
140
120
100
80
60
40
20
0
0
1
2
160
V
GS
= 4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
3
2.4 V
4
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
140
120
100
80
60
40
20
0
1.0
1.5
T
J
= 25°C
V
DS
= 10 V
10 V
7V
4.5
4.2 V
T
J
= 125°C
T
J
=
−55°C
2.0
2.5
3.0
3.5
4.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
2.0
0.0050
0.0048
0.0046
0.0044
0.0042
0.0040
0.0038
0.0036
0.0034
0.0032
0.0030
0.0028
0.0026
0.0024
0.0022
0.0020
Figure 2. Transfer Characteristics
I
D
= 30 A
T
J
= 25°C
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
3.0
4.0
5.0
6.0
V
GS
(V)
7.0
8.0
9.0
10
20
40
60
80
100
120
140
160
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.9
1.8 I
D
= 30 A
1.7 V
GS
= 10 V
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
−50 −25
0
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
I
DSS
, LEAKAGE (nA)
1000
T
J
= 125°C
T
J
= 85°C
100
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
25
50
75
100
125
150
10
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
NTMFS4935N
TYPICAL CHARACTERISTICS
4500
4000
C, CAPACITANCE (pF)
3500
3000
2500
2000
1500
1000
500
0
0
5
10
C
rss
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
iss
11
10
9
8
7
6
5
4
3
2
1
0
Qgs
Qgd
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
10
15
20
25
30
35
40
45
50
QT
V
GS
= 0 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
0
5
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
t
d(on)
10
30
25
20
15
10
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 125°C
T
J
= 25°C
5
0
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
100
10
1
0.1
0.01
0.01
0
≤
V
GS
≤
20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
130
120
110
100
90
80
70
60
50
40
30
20
10
0
Figure 10. Diode Forward Voltage vs. Current
I
D
= 29 A
I
D
, DRAIN CURRENT (A)
10
ms
100
ms
1 ms
10 ms
dc
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2023 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
