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FST8345M

器件型号:FST8345M
器件类别:分立半导体    二极管   
文件大小:842KB,共2页
厂商名称:Daco Semiconductor Co Ltd
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器件描述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 45V V(RRM), Silicon,

参数
参数名称属性值
厂商名称Daco Semiconductor Co Ltd
包装说明R-XSFM-T3
Reach Compliance Codeunknown
ECCN代码EAR99
应用GENERAL PURPOSE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.72 V
JESD-30 代码R-XSFM-T3
最大非重复峰值正向电流600 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流40 A
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压45 V
最大反向电流1000 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

文档预览

DACO SEMICONDUCTOR CO., LTD.
SCHOTTKY DIODE MODULE TYPE S 80A
FST8320M
T HRU
FST83100M
Features
Types Up to 100 V V
RRM
High Surge Capability
80 Amp Recti er
20-100 Volts
MINI MOD
D61-3M
Maximum Ratings
P
1
A
2
3
E
Operating Temperature: -55 C to +150
Storage Temperature: -55 C to +150
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum
RMS Voltage
14V
21V
25V
28V
32V
42V
56V
70V
L
N
B
Part Number
FST8320M
FST8330M
FST8335M
FST8340M
FST8345M
FST8360M
FST8380M
FST83100M
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
M
1
2
3
G
J
D
C
K
F
Electrical Characteristics
@
25
Average Forward
Current
(Per pkg)
Peak Forward Surge
Current
(Per leg)
DIMENSIONS
Unless Otherwise Specified
80A
600A
0.72V
0.78V
0.84V
1mA
10mA
30mA
1.10
I
F(AV)
I
FSM
V
F
TC =125
8.3ms , half sine
I
FM
=40 A; T
J
=25
Maximum
20V~45V
Instantaneous
Forward Voltage
50V~60V
(Per leg)
80V~100V
Maximum
Instantaneous
Reverse Current At
Rated DC Blocking
Voltage
(Per leg)
Maximum Thermal
Resistance Junction
To Case
(Per leg)
I
R
TJ = 25
TJ = 100
TJ = 150
DIM
A
B
C
D
E
F
G
J
K
L
M
N
P
IN CH ES
MIN
MAX
1.180
1.195
.200
NOM
.027
.037
.088
.098
.350
.370
1.490
1.510
.715
.695
.24
.26
.115
.135
.457
.477
.065
.085
.151
.161
.015
.025
MM
MIN
29.97
5.08
0.69
2.24
8.89
37.85
17.65
6.1
2.92
11.61
1.65
3.84
0.38
MAX
30.35
NOM
0.94
2.49
9.40
38.35
18.16
6.6
3.43
12.12
2.16
4.09
0.64
NOTE
2PL
R jc
/W
NOTE :
(1)
Pulse Test: Pulse Width 300
μsec.
Duty Cycle
<
2%
www.dacosemi.com.tw
-1-
DACO SEMICONDUCTOR CO.,LTD.
Fi gure .1-
Typical Forward Characteristics
FST8320M THRU FST83100M
Fi gure .2- Forward Derat ing Curve
300
200
T
J
=25
Average Forward Rectifer Current - Ampere
500
50
40
30
20
10
0
I nS tantaneous F orward C urrent
- Ampere
Amp
Per leg
100
50
40
30
20
15
10
6.0
4.0
2.0
1.0
FST8320M
FST8330M
FST8335M
FST8340M
FST8345M
FST8360M
FST8380M~
FST83100M
Amp
Per leg
S ingle P hase, Hal f Wave
60Hz Resis tive or Inductive Load
0
30
60
90
120
150
180
Case Te mperature -
0
0.2
0.4
0.6
Vo lts
0.8
1.0
1.2
100
60
40
20
10
6
4
2
Fi gure .4-
Typical Reverse Characteristics
Ins tantaneous Forward V oltage - V olts
T j =125 C
Figure .3- Peak Forward Surge Current
Instantaneous R everse
Leakage
C urrent -
m
A
Peak Forward Surge Current -Ampere
Amp
Per leg
m
A
1
0.6
0.4
0.2
0.1
T j =125 C
800
600
400
200
0
1
2
8 10
20
40
60 80 100
T
J
=25
.06
.04
.02
.01
20
30
40
50
60
70
80
90
100
4
6
Cyc les
Number Of Cycles At 60Hz - Cycles
Vo lts
Reverse V oltage - V olts(%)
www.dacosemi.com.tw
-2-
与FST8345M相近的元器件有:FST83100M、FST8320M、FST8330M、FST8335M、FST8340M、FST8360M、FST8380M。描述及对比如下:
型号 FST8345M FST83100M FST8320M FST8330M FST8335M FST8340M FST8360M FST8380M
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 45V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 100V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 20V V(RRM), Silicon Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 30V V(RRM), Silicon Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 40V V(RRM), Silicon Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 60V V(RRM), Silicon Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 80V V(RRM), Silicon
包装说明 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.72 V 0.84 V 0.72 V 0.72 V 0.72 V 0.72 V 0.78 V 0.84 V
JESD-30 代码 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3 R-XSFM-T3
最大非重复峰值正向电流 600 A 600 A 600 A 600 A 600 A 600 A 600 A 600 A
元件数量 2 2 2 2 2 2 2 2
相数 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 40 A 40 A 40 A 40 A 40 A 40 A 40 A 40 A
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 45 V 100 V 20 V 30 V 35 V 40 V 60 V 80 V
最大反向电流 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA
表面贴装 NO NO NO NO NO NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
厂商名称 Daco Semiconductor Co Ltd - Daco Semiconductor Co Ltd Daco Semiconductor Co Ltd Daco Semiconductor Co Ltd Daco Semiconductor Co Ltd Daco Semiconductor Co Ltd Daco Semiconductor Co Ltd

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