电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索
 

MQLC45E3TR

器件型号:MQLC45E3TR
器件类别:分立半导体    二极管   
文件大小:190KB,共4页
厂商名称:Microsemi
厂商官网:https://www.microsemi.com
标准:
下载文档

器件描述

Trans Voltage Suppressor Diode, 1500W, 45V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

参数
参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
零件包装代码DO-13
包装说明O-MALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
最大击穿电压61.1 V
最小击穿电压50 V
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-202AA
JESD-30 代码O-MALF-W2
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料METAL
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散1 W
参考标准MIL-19500
最大重复峰值反向电压45 V
表面贴装NO
技术AVALANCHE
端子形式WIRE
端子位置AXIAL

文档预览

LC6.5 thru LC170A, e3
1500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
This hermetically sealed Transient Voltage Suppressor (TVS) product family
includes a rectifier diode element in series and opposite direction to achieve low
capacitance performance below 100 pF (see Figure 2). The low level of TVS
capacitance may be used for protecting higher frequency applications in inductive
switching environments or electrical systems involving secondary lightning effects
per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne
avionics. With virtually instantaneous response, they also protect from ESD and
EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient capability is
required, two of these low capacitance TVS devices may be used in parallel in
opposite directions (anti
-
parallel) for complete ac protection as shown in Figure 4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-13
(DO-202AA)
FEATURES
Unidirectional low-capacitance TVS series for flexible
thru-hole mounting (for bidirectional see Figure 4)
Suppresses transients up to 1500 watts @ 10/1000 µs
(see Figure 1)*
Clamps transient in less than 100 pico seconds
Working voltage (V
WM
) range 6.5 V to 170 V
Hermetic sealed DO-13 metal package
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, MSP prefixes
respectively to part numbers, e.g. MXLC6.5A, etc.
Surface mount equivalent packages also available as
SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -
SMCGLCE170A in separate data sheet (consult factory
for other surface mount options)
Plastic axial-leaded equivalents available in the LCE6.5
- LCE170A series in separate data sheet
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Low capacitance for data line protection up to 1 MHz
Protection for aircraft fast data rate lines up to Level 5
Waveform 4 and Level 2 Waveform 5A in RTCA/DO-
160D (also see MicroNote 130) & ARINC 429 with bit
rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1:
Class 2:
Class 3:
Class 4:
LC6.5 to LC170A
LC6.5 to LC150A
LC6.5 to LC70A
LC6.5 to LC36A
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 :
Class 2:
Class 3:
Class 4:
LC6.5
LC6.5
LC6.5
LC6.5
to LC90A
to LC45 A
to LC22A
to LC11A
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: LC6.5 to LC20A
Class 3: LC6.5 to LC10A
Inherently radiation hard per Microsemi MicroNote 050
MAXIMUM RATINGS
1500 Watts at 10/1000
μs
with repetition rate of 0.01% or
o
less*
at lead temperature (T
L
) 25 C (see Figs. 1, 2, & 4)
o
o
Operating & Storage Temperatures: -65 to +175 C
THERMAL RESISTANCE: 50
o
C/W (Typical) junction to
lead at 0.375 inches (10 mm) from body or 110
o
C/W
junction to ambient when mounted on FR4 PC board with
4 mm
2
copper pads (1 oz) and track width 1 mm, length
25 mm
DC Power Dissipation
*
: 1 Watt at T
L
< +125
o
C 3/8” (10
mm) from body (see derating in Fig 3 and note below)
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method 2026
POLARITY: Cathode connected to case as shown by
diode symbol (cathode positive for normal operation)
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
LC6.5 thru LC170A
*
TVS devices are not typically used for dc power dissipation and are instead operated < V
WM
(rated standoff voltage) except for transients that briefly
drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak
pulse power for unidirectional and bidirectional configurations respectively.
Copyright
©
2008
10-29-2008 REV E
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
LC6.5 thru LC170A, e3
1500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS @ 25
o
C
BREAKDOWN VOLTAGE
REVERSE
STANDOFF
VOLTAGE
MAXIMUM
STANDBY
CURRENT
MAXIMUM
CLAMPING
VOLTAGE
MAXIMUM
PEAK
PULSE
CURRENT
MAXIMUM
CAPACITANCE
WORKING
INVERSE
BLOCKING
VOLTAGE
INVERSE
BLOCKING
LEAKAGE
CURRENT
PEAK
INVERSE
BLOCKING
VOLTAGE
VOLTS
WWW .
Microsemi
.C
OM
MICROSEMI
PART
NUMBER
LC6.5
LC6.5A
LC7.0
LC7.0A
LC7.5
LC7.5A
LC8.0
LC8.0A
LC8.5
LC8.5A
LC9.0
LC9.0A
LC10
LC10A
LC11
LC11A
LC12
LC12A
LC13
LC13A
LC14
LC14A
LC15
LC15A
LC16
LC16A
LC17
LC17A
LC18
LC18A
LC20
LC20A
LC22
LC22A
LC24
LC24A
LC26
LC26A
LC28
LC28A
LC30
LC30A
LC33
LC33A
LC36
LC36A
LC40
LC40A
LC43
LC43A
LC45
LC45A
LC48
LC48A
LC51
LC51A
V
WM
VOLTS
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
43
43
45
45
48
48
51
51
V
(BR)
VOLTS
@
MAX
I
D @
V
WM
μA
1000
1000
500
500
250
250
100
100
50
50
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
C
@ I
PP
VOLTS
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
58.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
MIN
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
I
(BR)
mA
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
I
PP
@
10/1000 µs
@ 0 Volts,
f = 1 MHz
pF
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
V
WIB
VOLTS
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
150
150
150
150
150
150
150
150
I
IB
@
V
WIB
µA
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
AMPS
100
100
100
100
100
100
100
100
94
100
89
97
80
88
74
82
68
75
63
70
58
65
56
61
52
57
49
54
46
51
42
46
38
42
35
39
32
36
30
33
28
31
25.4
28.1
23.3
25.8
21.0
23.3
19.5
21.6
18.7
20.6
17.5
19.4
16.5
18.2
V
PIB
VOLTS
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
200
200
200
200
200
200
200
200
Page 2
LC6.5 thru LC170A
Copyright
©
2008
10-29-2008 REV E
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
LC6.5 thru LC170A, e3
1500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
BREAKDOWN VOLTAGE
REVERSE
STANDOFF
VOLTAGE
MAXIMUM
STANDBY
CURRENT
MAXIMUM
CLAMPING
VOLTAGE
MAXIMUM
PEAK
PULSE
CURRENT
CAPACI-
TANCE
V
WIB
I
IB
@
V
WIB
V
(BR)
V
WM
I
(BR)
V
PIB
10/1000 µs
VOLTS
VOLTS
VOLTS
μA
pF
AMPS
VOLTS
µA
VOLTS
mA
MIN
MAX
200
10
150
100
15.6
96.3
5
1
73.3
60.0
54
LC54
200
10
150
100
17.2
87.1
5
1
66.3
60.0
54
LC54A
200
10
150
100
14.6
103.0
5
1
78.7
64.4
58
LC58
200
10
150
100
16.0
93.6
5
1
71.2
64.4
58
LC58A
200
10
150
90
14.0
107.0
5
1
81.5
66.7
60
LC60
200
10
150
90
15.5
96.8
5
1
73.7
66.7
60
LC60A
200
10
150
90
13.2
114.0
5
1
86.9
71.1
64
LC64
200
10
150
90
14.6
103.0
5
1
78.6
71.1
64
LC64A
200
10
150
90
12.0
125
5
1
95.1
77.8
70
LC70
200
10
150
90
13.3
113
5
1
86.0
77.8
70
LC70A
200
10
150
90
11.2
134
5
1
102.0
83.3
75
LC75
200
10
150
90
12.4
121
5
1
92.1
83.3
75
LC75A
200
10
150
90
10.6
142
5
1
108
88.7
80
LC80
200
10
150
90
11.6
129
5
1
98.0
88.7
80
LC80A
200
10
300
90
9.4
160
5
1
122
100
90
LC90
200
10
300
90
10.3
146
5
1
111
100
90
LC90A
200
10
300
90
8.4
179
5
1
136
111
100
LC100
200
10
300
90
9.3
162
5
1
123
111
100
LC100A
400
10
300
90
7.7
196
5
1
149
122
110
LC110
400
10
300
90
8.4
178
5
1
135
122
110
LC110A
400
10
300
90
7.0
214
5
1
163
133
120
LC120
400
10
300
90
7.8
193
5
1
147
133
120
LC120A
400
10
300
90
6.5
231
5
1
176
144
130
LC130
400
10
300
90
7.2
209
5
1
159
144
130
LC130A
400
10
300
90
5.6
268
5
1
204
167
150
LC150
400
10
300
90
6.2
243
5
1
185
167
150
LC150A
400
10
300
90
5.2
287
5
1
218
178
160
LC160
400
10
300
90
5.8
259
5
1
197
178
160
LC160A
LC170
170
189
231
1
5
304
4.9
90
300
10
400
LC170A
170
189
209
1
5
275
5.4
90
300
10
400
NOTE:
TVS are normally selected according to the reverse “Standoff Voltage” (V
WM
) that should be equal to or greater than the dc or continuous
peak operating voltage level.
MICROSEMI
PART
NUMBER
@
I
D @
V
WM
V
C
@ I
PP
I
PP
@
@0
Volts
WORKING
INVERSE
BLOCKING
VOLTAGE
INVERSE
BLOCKING
LEAKAGE
CURRENT
PEAK
INVERSE
BLOCKING
VOLTAGE
VOLTS
WWW .
Microsemi
.C
OM
GRAPHS
LC6.5 thru LC170A
FIGURE 1
Peak Pulse Power vs.
Pulse Time (t
W
) in
μs
Copyright
©
2008
10-29-2008 REV E
Pulse Time (tw) in
μs
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
LC6.5 thru LC170A, e3
1500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 2. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 3. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a
low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating
than the TVS clamping voltage V
C
. The Microsemi recommended rectifier part number is the “LCR80” for the application in Figure 5. If using two
(2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the
reverse of each rectifier diode) is also provided. The unidirectional and bidirectional configurations in Figure 3 and 4 will both result in twice the
capacitance of Figure 2.
WWW .
Microsemi
.C
OM
FIGURE 2
TVS with internal Low
Capacitance Diode
FIGURE 3
Optional Unidirectional
configuration (TVS and
separate rectifier diode)
in parallel)
FIGURE 4
Optional Bidirectional
configuration (two TVS
devices in anti-parallel)
PACKAGE DIMENSIONS
LC6.5 thru LC170A
DO-13 (or DO-202AA)
Copyright
©
2008
10-29-2008 REV E
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区知春路23号集成电路设计园量子银座1305 电话:(010)82350740 邮编:100191

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2023 EEWORLD.com.cn, Inc. All rights reserved