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531AA85M0000BGR

器件型号:531AA85M0000BGR
器件类别:无源元件    振荡器   
厂商名称:Silicon Laboratories Inc
标准:  
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器件描述

LVPECL Output Clock Oscillator, 85MHz Nom, ROHS COMPLIANT, SMD, 6 PIN

参数
参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Silicon Laboratories Inc
Reach Compliance Codeunknown
其他特性TAPE AND REEL
最长下降时间0.35 ns
频率调整-机械NO
频率稳定性50%
JESD-609代码e4
制造商序列号531
安装特点SURFACE MOUNT
标称工作频率85 MHz
最高工作温度85 °C
最低工作温度-40 °C
振荡器类型LVPECL
物理尺寸7.0mm x 5.0mm x 1.85mm
最长上升时间0.35 ns
最大供电电压3.63 V
最小供电电压2.97 V
标称供电电压3.3 V
表面贴装YES
最大对称度55/45 %
端子面层Nickel/Gold (Ni/Au)
Base Number Matches1

文档预览

S i 5 3 0 / 5 31
C
R Y S TA L
O
S C I L L A T O R
(XO)
(10 M H
Z T O
1.4 G H
Z
)
Features
Available with any-rate output
frequencies from 10 MHz to 945 MHz
and select frequencies to 1.4 GHz
3rd generation DSPLL
®
with superior
jitter performance
3x better frequency stability than
SAW-based oscillators
Internal fixed crystal frequency
ensures high reliability and low
aging
Available CMOS, LVPECL,
LVDS, and CML outputs
3.3, 2.5, and 1.8 V supply options
Industry-standard 5 x 7 mm
package and pinout
Pb-free/RoHS-compliant
Si5602
Ordering Information:
See page 7.
Applications
SONET/SDH
Networking
SD/HD video
Test and measurement
Clock and data recovery
FPGA/ASIC clock generation
Pin Assignments:
See page 6.
(Top View)
NC
OE
GND
1
2
3
6
5
4
V
DD
Description
The Si530/531 XO utilizes Silicon Laboratories’ advanced DSPLL circuitry
to provide a low jitter clock at high frequencies. The Si530/531 is available
with any-rate output frequency from 10 to 945 MHz and select frequencies to
1400 MHz. Unlike a traditional XO, where a different crystal is required for
each output frequency, the Si530/531 uses one fixed crystal to provide a
wide range of output frequencies. This IC based approach allows the crystal
resonator to provide exceptional frequency stability and reliability. In addition,
DSPLL clock synthesis provides superior supply noise rejection, simplifying
the task of generating low jitter clocks in noisy environments typically found in
communication systems. The Si530/531 IC based XO is factory configurable
for a wide variety of user specifications including frequency, supply voltage,
output format, and temperature stability. Specific configurations are factory
programmed at time of shipment, thereby eliminating long lead times
associated with custom oscillators.
®
CLK–
CLK+
Si530 (LVDS/LVPECL/CML)
OE
NC
GND
1
2
3
6
5
4
V
DD
Functional Block Diagram
V
DD
CLK– CLK+
NC
CLK
Si530 (CMOS)
Fixed
Frequency
XO
Any-rate
10–1400 MHz
DSPLL
®
Clock
Synthesis
OE
NC
GND
1
2
3
6
5
4
V
DD
CLK–
CLK+
Si531 (LVDS/LVPECL/CML)
OE
GND
Rev. 1.0 7/06
Copyright © 2006 by Silicon Laboratories
Si530/531
Si530/531
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Supply Voltage
1
Symbol
V
DD
Test Condition
3.3 V option
2.5 V option
1.8 V option
Supply Current
I
DD
Output enabled
LVPECL
CML
LVDS
CMOS
TriState mode
Output Enable (OE)
2
Operating Temperature Range
3
V
IH
V
IL
T
A
Min
2.97
2.25
1.71
0.75 x V
DD
–40
Typ
3.3
2.5
1.8
111
99
90
81
60
Max
3.63
2.75
1.89
121
108
98
88
70
0.5
85
V
ºC
V
Units
mA
Notes:
1.
Selectable parameter specified by part number. See Section 3. "Ordering Information" on page 7 for further details.
2.
OE pin includes a 17 kΩ pullup resistor to V
DD
. Pulling OE to ground causes outputs to tristate.
3.
If the device is powered up below –20 ºC and the ambient temperature rises by approximately 105 ºC during normal
operation, the device will perform a one-time recalibration. The output is squelched for approximately 2–3 ms during
this recalibration.
Table 2. CLK± Output Frequency Characteristics
Parameter
Nominal Frequency
1,2
Symbol
f
O
Test Condition
LVPECL/LVDS/CML
CMOS
Min
10
10
–20
–50
Typ
±1.5
Max
945
160
+20
+50
±10
10
Units
MHz
ppm
ppm
ppm
ms
Initial Accuracy
Temperature Stability
1,3
Aging
Powerup Time
4
f
i
Measured at +25 °C at
time of shipping
∆f/f
O
f
a
t
OSC
Frequency drift over
projected 15 year life
Notes:
1.
See Section 3. "Ordering Information" on page 7 for further details.
2.
Specified at time of order by part number. Also available in frequencies from 970 to 1134 MHz and 1213 to 1417 MHz.
3.
Selectable parameter specified by part number.
4.
Time from powerup or tristate mode to f
O
.
2
Rev. 1.0
Si530/531
Table 3. CLK± Output Levels and Symmetry
Parameter
LVPECL Output Option
1
Symbol
V
O
V
OD
V
SE
Test Condition
mid-level
swing (diff)
swing (single-ended)
mid-level
swing (diff)
Min
V
DD
– 1.42
1.1
0.5
1.125
0.32
Typ
Max
V
DD
– 1.25
1.9
0.93
1.275
0.50
Units
V
V
PP
V
PP
V
V
PP
1.20
0.40
LVDS Output Option
2
V
O
V
OD
CML Output Option
2
CMOS Output Option
3
V
O
V
OD
V
OH
V
OL
mid-level
swing
(diff)
I
OH
= 32 mA
I
OL
= 32 mA
0.70
0.8 x V
DD
V
DD
– 0.75
0.95
1
1.20
V
DD
V
V
PP
V
45
0.4
350
55
Rise/Fall time (20/80%)
t
R,
t
F
LVPECL/LVDS/CML
CMOS with CL = 15 pF
ps
ns
%
Symmetry (duty cycle)
SYM
LVPECL:
LVDS:
CMOS:
V
DD
– 1.3 V (diff)
1.25 V (diff)
V
DD
/2
Notes:
1.
50
to V
DD
– 2.0 V.
2.
R
term
= 100
(differential).
3.
C
L
= 15 pF
Table 4. CLK± Output Phase Jitter
Parameter
Phase Jitter (RMS)*
for F
OUT
> 500 MHz
Symbol
Test Condition
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
LVPECL
CML
LVDS
Min
Typ
0.40
0.30
0.35
0.40
0.40
0.45
0.45
Max
0.50
0.40
0.47
0.49
0.50
0.50
0.52
Units
ps
ps
φ
J
Phase Jitter (RMS)*
for F
OUT
of 125 to 500 MHz
φ
J
12 kHz to 20 MHz (OC-48)
LVPECL
CML
LVDS
ps
*Note:
Differential Modes: LVPECL/LVDS/CML. Refer to AN256 for further information.
Rev. 1.0
3
Si530/531
Table 5. CLK± Output Period Jitter
Parameter
Period Jitter*
for F
OUT
< 160 MHz
Symbol
J
PER
Test Condition
RMS
Peak-to-Peak
Min
Typ
1
5
Max
Units
ps
*Note:
Any output mode, including CMOS, LVPECL, LVDS, CML. N = 1000 cycles. Refer to AN279 for further information.
Table 6. CLK± Output Phase Noise (Typical)
Configuration
Offset Frequency (f)
100 Hz
1 kHz
10 kHz
100 kHz
1 MHz
10 MHz
100 MHz
–110
–127
–134
–136
–143
–147
n/a
f
C
Output
81.25 MHz
LVDS
L
(f)
–100
–115
–119
–123
–135
–144
–147
–87
–102
–107
–111
–121
–135
–142
312.5 MHz
LVPECL
1066 MHz
LVPECL
Units
dBc/Hz
Table 7. Absolute Maximum Ratings
1
Parameter
Supply Voltage
Input Voltage (any input pin)
Storage Temperature
ESD Sensitivity (HBM, per JESD22-A114)
Soldering Temperature (Pb-free profile)
2
Soldering Temperature Time @ T
PEAK
(Pb-free profile)
2
Symbol
V
DD
V
I
T
S
ESD
T
PEAK
t
P
Rating
–0.5 to +3.8
–0.5 to V
DD
+ 0.3
–55 to +125
>2500
260
10
Units
Volts
Volts
ºC
Volts
ºC
seconds
Notes:
1.
Stresses beyond those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional
operation or specification compliance is not implied at these conditions.
2.
Refer to Si5xx Packaging FAQ available for download at
www.silabs.com/VCXO
for further information, including
soldering profiles.
4
Rev. 1.0
Si530/531
Table 8. Environmental Compliance
The Si530/531 meets the following qualification test requirements.
Parameter
Mechanical Shock
Mechanical Vibration
Solderability
Gross & Fine Leak
Resistance to Solvents
Conditions/ Test Method
MIL-STD-883F, Method 2002.3 B
MIL-STD-883F, Method 2007.3 A
MIL-STD-883F, Method 203.8
MIL-STD-883F, Method 1014.7
MIL-STD-883F, Method 2016
Rev. 1.0
5
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