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HZM18NB2TL

器件型号:HZM18NB2TL
器件类别:分立半导体    二极管   
文件大小:37KB,共10页
厂商名称:Hitachi (Renesas )
厂商官网:http://www.renesas.com/eng/
下载文档

器件描述

Zener Diode, 17.955V V(Z), 2.2%, 0.2W, Silicon, Unidirectional, SC-59A, 3 PIN

参数
参数名称属性值
是否Rohs认证不符合
零件包装代码SC-59A
包装说明R-PDSO-G3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性UNIDIRECTIONAL
最大功率耗散0.2 W
认证状态Not Qualified
标称参考电压17.955 V
表面贴装YES
技术ZENER
端子形式GULL WING
端子位置DUAL
最大电压容差2.2%
工作测试电流5 mA
Base Number Matches1

文档预览

HZM-N Series
Silicon Epitaxial Planar Zener Diode for Stabilizer
ADE-208-130C (Z)
Rev. 3
Features
Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.
MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HZM-N Series
Laser Mark
Let to Mark Code
Package Code
MPAK
Outline
3
2
1
(Top View)
1 NC
2 Anode
3 Cathode
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Note: See Fig. 3.
Symbol
Pd*
Tj
Tstg
Value
200
150
–55 to +150
Unit
mW
°C
°C
HZM-N Series
Electrical Characteristics
(Ta = 25°C)
Zener Voltage*
V
Z
(V)
Type
HZM2.0N
HZM2.2N
HZM2.4N
HZM2.7N
Grade
B
B
B
B
B1
B2
HZM3.0N
B
B1
B2
HZM3.3N
B
B1
B2
HZM3.6N
B
B1
B2
HZM3.9N
B
B1
B2
HZM4.3N
B
B1
B2
B3
HZM4.7N
B
B1
B2
B3
HZM5.1N
B
B1
B2
B3
Min
1.90
2.10
2.30
2.50
2.50
2.65
2.80
2.80
2.95
3.10
3.10
3.25
3.40
3.40
3.55
3.70
3.70
3.87
4.01
4.01
4.15
4.28
4.42
4.42
4.55
4.69
4.84
4.84
4.98
5.14
Max
2.20
2.40
2.60
2.90
2.75
2.90
3.20
3.05
3.20
3.50
3.35
3.50
3.80
3.65
3.80
4.10
3.97
4.10
4.48
4.21
4.34
4.48
4.90
4.61
4.75
4.90
5.37
5.04
5.20
5.37
5
5
1.5
130
5
5
10
1.0
130
5
5
10
1.0
130
5
5
10
1.0
130
5
5
10
1.0
130
5
5
20
1.0
130
5
5
50
1.0
120
5
Test
Condition
I
Z
(mA)
5
5
5
5
Reverse Current
I
R
(µA)
Max
120
120
120
120
Test
Condition
V
R
(V)
0.5
0.7
1.0
1.0
Dynamic Resistance
r
d
(Ω)
Max
100
100
100
110
Test
Condition
I
Z
(mA)
5
5
5
5
Note: Tested with pulse (P
W
= 40ms)
HZM-N Series
Electrical Characteristics
(Ta = 25°C) (cont)
Zener Voltage*
V
Z
(V)
Type
HZM5.6N
Grade
B
B1
B2
B3
HZM6.2N
B
B1
B2
B3
HZM6.8N
B
B1
B2
B3
HZM7.5N
B
B1
B2
B3
HZM8.2N
B
B1
B2
B3
HZM9.1N
B
B1
B2
B3
HZM10N
B
B1
B2
B3
Min
5.31
5.31
5.49
5.67
5.86
5.86
6.06
6.26
6.47
6.47
6.65
6.86
7.06
7.06
7.28
7.52
7.76
7.76
8.02
8.28
8.56
8.56
8.85
9.15
9.45
9.45
9.77
10.11
Max
5.92
5.55
5.73
5.92
6.53
6.12
6.33
6.53
7.14
6.73
6.93
7.14
7.84
7.36
7.60
7.84
8.64
8.10
8.36
8.64
9.55
8.93
9.23
9.55
10.55
9.87
10.21
10.55
5
2
7.0
30
5
5
2
6.0
30
5
5
2
5.0
30
5
5
2
4.0
30
5
5
2
3.5
30
5
5
2
3.0
50
5
Test
Condition
I
Z
(mA)
5
Reverse Current
I
R
(µA)
Max
5
Test
Condition
V
R
(V)
2.5
Dynamic Resistance
r
d
(Ω)
Max
80
Test
Condition
I
Z
(mA)
5
Note: Tested with pulse (P
W
= 40ms)
HZM-N Series
Electrical Characteristics
(Ta = 25°C) (cont)
Zener Voltage *
V
Z
(V)
Type
HZM11N
Grade
B
B1
B2
B3
HZM12N
B
B1
B2
B3
HZM13N
B
B1
B2
B3
HZM15N
B
B1
B2
B3
HZM16N
B
B1
B2
B3
HZM18N
B
B1
B2
B3
HZM20N
B
B1
B2
B3
Min
10.44
10.44
10.76
11.10
11.42
11.42
11.74
12.08
12.47
12.47
12.91
13.37
13.84
13.84
14.34
14.85
15.37
15.37
15.85
16.35
16.94
16.94
17.56
18.21
18.86
18.86
19.52
20.21
Max
11.56
10.88
11.22
11.56
12.60
11.90
12.24
12.60
13.96
13.03
13.49
13.96
15.52
14.46
14.98
15.52
17.09
16.01
16.51
17.09
19.03
17.70
18.35
19.03
21.08
19.70
20.39
21.08
5
2
15.0
50
5
5
2
13.0
45
5
5
2
12.0
40
5
5
2
11.0
40
5
5
2
10.0
35
5
5
2
9.0
35
5
Test
Condition
I
Z
(mA)
5
Reverse Current
I
R
(µA)
Max
2
Test
Condition
V
R
(V)
8.0
Dynamic Resistance
r
d
(Ω)
Max
30
Test
Condition
I
Z
(mA)
5
Note: Tested with pulse (P
W
= 40ms)
HZM-N Series
Electrical Characteristics
(Ta = 25°C) (cont)
Zener Voltage*
V
Z
(V)
Type
HZM22N
Grade
B
B1
B2
B3
HZM24N
B
B1
B2
B3
HZM27N
HZM30N
HZM33N
HZM36N
B
B
B
B
Min
20.88
20.88
21.54
22.23
22.93
22.93
23.72
24.54
25.10
28.00
31.00
34.00
Max
23.17
21.77
22.47
23.17
25.57
23.96
24.78
25.57
28.90
32.00
35.00
38.00
2
2
2
2
2
2
2
2
21.0
23.0
25.0
27.0
70
80
80
90
2
2
2
2
5
2
19.0
60
5
Test
Condition
I
Z
(mA)
5
Reverse Current
I
R
(µA)
Max
2
Test
Condition
V
R
(V)
17.0
Dynamic Resistance
r
d
(Ω)
Max
55
Test
Condition
I
Z
(mA)
5
Note: Tested with pulse (P
W
= 40ms)

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