SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1870
DESCRIPTION
·With TO-3 package
·High switching speed
APPLICATIONS
·For power switching applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
MAXIMUN RATINGS
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
mb
*25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
300
250
7
10
3
100
150
-65~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.25
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ; I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=5A; I
B
=1A
I
C
=5A; I
B
=1A
V
CB
=300V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=10A ; V
CE
=5V
15
MIN
250
300
7
2SC1870
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
1.0
1.5
0.1
0.1
V
V
mA
mA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1870
Fig.2 Outline dimensions
3
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