Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220 package
・High
voltage
・Low
saturation voltage
APPLICATIONS
Suited for line-operated switchmode
applications such as:
・Fluorescent
lamp ballasts
・Inverters
・Solenoid
and relay drivers
・Motor
controls
・Deflection
circuits
PINNING
PIN
1
2
3
Base
Collector
DESCRIPTION
MJE12007
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
j
T
stg
固电
Emitter
导½
半
PARAMETER
CH
IN
Collector-base voltage
ANG
MIC
E SE
Open emitter
Open base
Open collector
OR
CT
NDU
O
VALUE
1500
750
9
2.5
5
UNIT
V
V
V
A
A
W
℃
℃
CONDITIONS
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Total power dissipation
T
C
=25℃
80
150
-65~150
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.56
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CEV
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=1A ;I
B
=0.5A
I
C
=2A ;I
B
=1A
I
C
=1A ;I
B
=0.5A
I
C
=2A ;I
B
=1A
V
CEV
=RatedValue
;
V
BE(off)
=-1.5V
T
C
=100℃
V
EB
=9V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=2A ; V
CE
=5V
3
MIN
750
MJE12007
TYP.
MAX
UNIT
V
1.0
2.5
1.5
2.8
0.25
2.5
0.25
V
V
V
V
mA
mA
固电
DC current gain
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
2.5
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE12007
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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