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EDI7P007FLC0200I15

器件型号:EDI7P007FLC0200I15
器件类别:存储    存储   
厂商名称:Microsemi
厂商官网:https://www.microsemi.com
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器件描述

Flash Card, 3.5MX16, 150ns, CARD-68

参数
参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码CARD
包装说明,
针数68
Reach Compliance Codecompliant
ECCN代码3A991.B.1.A
最长访问时间150 ns
JESD-30 代码R-XXMA-X68
内存密度58720256 bit
内存集成电路类型FLASH CARD
内存宽度16
功能数量1
端子数量68
字数3670016 words
字数代码3500000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织3.5MX16
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
编程电压5 V
认证状态Not Qualified
最大供电电压 (Vsup)5.25 V
最小供电电压 (Vsup)4.75 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级INDUSTRIAL
端子形式UNSPECIFIED
端子位置UNSPECIFIED
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

White Electronic Designs
PCMCIA Flash Memory Card
FLC Series
1 MEGABYTE through 10 MEGABYTE (AMD based)
FEATURES
Low cost Medium/High Density Linear Flash Card
Based on AMD Am29F040 Components (equivalent
of AMD’s AmC0XXCFLKA)
Single supply operation, no additional programming
voltage required
• 5 V only for write, erase and read operations
Fast Read Performance
• 150ns Maximum Access Time
PCMCIA/JEIDA 68-pin standard
• x8/ x16 Data Interface
• type I Form Factor
Automated write and erase operations
• 64Kbyte memory sectors for faster automated
erase speed
• Typically 1.5 s per single memory sector erase
• Random address writes to previously erased
bytes; 16µs per byte typical
100,000 Erase/Program Cycles
The WEDC FLC series is based on AMD Am29F040
Flash memories; the FLC04 is a direct equivalent of
AMD’s AmC0XXCFLKA, however it offers wider range of
intermediate memory capacities.
Note:
Standard options include attribute memory. Cards without attribute memory are
available. Cards are also available with or without a hardware write protect switch.
ARCHITECTURE OVERVIEW
FLC Series Cards are based on the Am29F040 (4Mb)
components which work with single 5V applications.
Manufacture/Device code is 01h/A4h.
FLC series is designed to support from 2 to 20 components,
providing densities ranging from 1MB to 10MB in 1MB
increments. In support of the PC Card 95 standard for
word wide access devices are paired. Write, read and
erase operations can be performed as either a word or
byte wide operation . By multiplexing A0, CE1# and CE2#,
8-bit hosts can access all data on data lines DQ0 - DQ7.
The FLC series cards conform to the PC Card Standard
(PCMCIA) and JEIDA, providing electrical and physical
compatibility. The PC Card form factor offers an industry
standard pinout and mechanical outline, allowing density
upgrades without system design changes.
WEDC’s standard cards are shipped with WEDC’s Logo.
Cards are also available with blank housings (no Logo).
The blank housings are available in both a recessed
(for label) and flat housing. Please contact WEDC
sales representative for further information on Custom
artwork.
GENERAL DESCRIPTION
WEDC’s FLC Series Flash memory cards offer medium/
high density linear Flash solid state storage solutions for
code and data storage, high performance disk emulation
and execute in place (XIP) applications in mobile PC and
dedicated (embedded) equipment.
FLC series cards conform to PCMCIA international
standard.
The card’s control logic provides the system interface
and controls the internal Flash memories. Card can be
read/written in byte-wide or word-wide mode which allows
for flexible integration into various systems. Combined
with file management software, such as Flash Translation
Layer (FTL), FLC Flash cards provide removable high-
performance disk emulation.
The FLC series cards contain separate 2kB EEPROM
memory for Card Information Structure (CIS) which can be
used for easy identification of card characteristics.
Auguat 2000
Rev. 3
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
PCMCIA Flash Memory Card
FLC Series
BLOCK DIAGRAM
Vcc
Device Pair 9
Device 19
CSH9
Device 18
CSL9
Array Address
Bus A1-A19
ADDRESS
BUFFER
ADDRESS BUS
A1-A23
Control
Address
Bus
Vcc
C9
High
C0 Control Logic
PCMCIA
Interface
C9
Low
C0
Ctrl Att enable
CSH9
CSH0
Device Pair 1
CSL9
Device 3
CSH1
Device Pair 0
Device 1
CSH0
Device 0
CSL0
Device 2
CSL1
CSL0
WE#
OE#
CE2#
CE1#
REG#
A0
WP
Attrib. Mem
CIS
EEPROM 2kB
WR#
Vcc
DATA
BUS
Q8-Q15
DATA
BUS
Q0-Q7
RD#
Q0-Q7
control
Vcc
I/O buffer
DATA
BUS
D8-D15
DATA
BUS
D0-D7
SUPPORTED COMPONENTS (max 20 X):
CD1#
CD2#
WAIT#
BVD1
BVD2
VS1
VS2
Vpp1
Vpp2
open
open
open
open
GND
Vcc
Vcc
Am29F040
Device type
Am29F040
Manuf ID Device ID
01
H
A4
H
Auguat 2000
Rev. 3
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
PINOUT
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Signal name
GND
DQ3
DQ4
DQ5
DQ6
DQ7
CE1#
A10
OE#
A11
A9
A8
A13
A14
WE#
RDY/BSY#
V
CC
V
PP
1
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
WP
GND
I
I
I
I
I
I
I
I
I
I
I
I/O
I/O
I/O
O
I/O
I/O
I/O
I/O
I/O
I
I
I
I
I
I
I
I
I
O
I/O
Function
Ground
Data bit 3
Data bit 4
Data bit 5
Data bit 6
Data bit 7
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
Address bit 13
Address bit 14
Write Enable
Ready/Busy
Supply Voltage
Prog. Voltage
Address bit 16
Address bit 15
Address bit 12
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Address bit 0
Data bit 0
Data bit 1
Data bit 2
Write Potect
Ground
HIGH
N.C.
LOW
N.C.
LOW
LOW
Active
Pin
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
PCMCIA Flash Memory Card
FLC Series
Signal name
GND
CD1#
DQ11
DQ12
DQ13
DQ14
DQ15
CE2#
VS1
RFU
RFU
A17
A18
A19
A20
A21
V
CC
V
PP
2
A22
A23
A24
A25
VS2
RST
Wait#
RFU
REG#
BVD2
BVD1
DQ8
DQ9
DQ10
CD2#
GND
I/O
O
I/O
I/O
I/O
I/O
I
I
O
Function
Ground
Card Detect 1
Data bit 11
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card Enable 2
Voltage Sense 1
Reserved
Reserved
Active
LOW
LOW
N.C.
N.C.
N.C.
I
I
I
I
I
Address bit 17
Address bit 18
Address bit 19
Address bit 20
Address bit 21
Supply Voltage
Prog. Voltage
NC
8MB(2,3)
16/10MB(2,3)
N.C.
N.C.
N.C.
N.C.
LOW(1)
N.C.
LOW(1)
(1)
(1)
1MB(2)
2MB(2)
4MB(2.3)
I
I
I
I
O
I
O
I
O
O
I/O
I/O
O
O
Address bit 22
Address bit 23
Address bit 24
Address bit 25
Voltage Sense 2
Card Reset
Extended Bus cycle
Reserved
Attrib Mem Select
Bat. Volt. Detect 2
Bat. Volt. Detect 1
Data bit 8
Data bit 9
Data bit 10
Card Detect 2
Ground
LOW
Notes:
1. Wait#, BVD1 and BVD2 are driven high for compatibility
2. Shows density for which specified address bit is MSB. Higher order address bits are
N.C. (i.e. 4MB A21 is MSB A22 - A25 are NC).
3. For the 3MB card the memory will wrap at the 4MB boundary, for 5MB, 6MB, and &
7MB cards the memory will wrap at the 8MB boundary, for 9MB and 10MB cards the
memory will wrap at the 16MB boundary.
MECHANICAL
1.6mm
±
0.05
(0.063”)
10.0mm MIN
(0.400”)
3.0mm MIN
1.0mm
± 0.05
(0.039”)
Substrate area
54.0mm
±
0.10
(2.126”)
1.0mm
±
0.05
(0.039”)
Interconnect area
10.0mm MIN
(0.400”)
85.6mm
±
0.20
(3.370”)
3.3mm ± T1
(0.130”)
T1=0.10mm
interconnect area
T1=0.20mm
substrate area
Auguat 2000
Rev. 3
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
Symbol
A0 - A25
Type
INPUT
Name and Function
PCMCIA Flash Memory Card
FLC Series
CARD SIGNAL DESCRIPTION
ADDRESS INPUTS:
A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not used
in word access mode. The memory will wrap at the card density boundary (see PINOUT, note 3). The system should not try
to access memory beyond the card density. A25 is the most significant bit. A24 – A25 are not connected.
DQ0 - DQ15 INPUT/OUTPUT
DATA INPUT/OUTPUT:
DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ0 – DQ7 constitute the lower
(even) byte and DQ8 – DQ15 the upper (odd) byte. DQ15 is the MSB.
CE1#, CE2#
INPUT
CARD ENABLE 1 AND 2:
CE1# enables even byte accesses, CE2# enables odd byte accesses. Multiplexing A0, CE1#
and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7.
OE#
INPUT
OUTPUT ENABLE:
Active low signal gating read data from the memory card.
WE#
RDY/BSY#
CD1#, CD2#
WP
INPUT
N.C.
OUTPUT
OUTPUT
WRITE ENABLE:
Active low signal gating write data to the memory card.
READY/BUSY OUTPUT:
Indicates status of internally timed erase or program algorithms. This signal is not connected.
CARD DETECT 1 and 2:
Provide card insertion detection. These signals are internally connected to ground on the card.
The host shall monitor these signals to detect card insertion (pulled-up on host side).
WRITE PROTECT:
Write protect reflects the status of the Write Protect switch on the memory card. WP set to high = write
protected, providing internal hardware write lockout to the Flash array.
If card does not include optional write protect switch, this signal will be pulled low internally indicating write protect = “off”.
PROGRAM/ERASE POWER SUPPLY:
Provides programming voltages 12.0V for lower byte (D0 – D7) memory
components. This signal is not connected.
PROGRAM/ERASE POWER SUPPLY:
Provides programming voltages 12.0V for upper byte (D8 – D15) memory
components. This signal is not connected.
CARD POWER SUPPLY:
(5.0V).
CARD GROUND
INPUT
N.C.
OUTPUT
OUTPUT
OUTPUT
ATTRIBUTE MEMORY SELECT:
Active low signal, enables access to Attribute Memory Plane, occupied by Card
Information Structure and Card Registers.
RESET:
Active high signal for placing cards in Power-on default state. This signal is not connected.
WAIT:
This signal is pulled high internally for compatibility. No wait states are generated.
BATTERY VOLTAGE DETECT:
These signals are pulled high to maintain SRAM card compatibility.
VOLTAGE SENSE:
Notifies the host socket of the card’s V
CC
requirements. VS1 and VS2 are open to indicate a 5V card.
RESERVED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD:
pin may be driven or left floating
VPP1
VPP2
VCC
GND
REG#
RST
WAIT#
BVD1, BVD2
VS1, VS2
RFU
N.C.
N.C.
N.C.
Functional Truth Table
READ function
Function Mode
CE2#
CE1#
A
0
OE#
WE#
REG#
Common Memory
D15-D8
D
7
-D
0
REG#
Attribute Memory
D
15
-D
8
D
7
-D
0
Standby Mode
Byte Access (8 bits)
Word Access (16 bits)
Odd-Byte Only Access
WRITE function
Standby Mode
Byte Access (8 bits)
Word Access (16 bits)
Odd-Byte Only Access
Auguat 2000
Rev. 3
H
H
H
L
L
H
H
H
L
L
H
L
L
L
H
H
L
L
L
H
X
L
H
X
X
X
L
H
X
X
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
High-Z
High-Z
High-Z
Odd-Byte
Odd-Byte
X
X
X
Odd-Byte
Odd-Byte
High-Z
Even-Byte
Odd-Byte
Even-Byte
High-Z
X
Even-Byte
Odd-Byte
Even-Byte
X
X
L
L
L
L
X
L
L
L
L
High-Z
High-Z
High-Z
Not Valid
Not Valid
X
X
X
X
X
High-Z
Even-Byte
Not Valid
Even-Byte
High-Z
X
Even-Byte
X
Even-Byte
X
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
(2)
Operating Temperature T
A
(ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to V
SS
V
CC
supply Voltage relative to V
SS
0°C to +60°C
-40°C to +85°C
-30°C to +80°C
-40°C to +85°C
-0.5V to V
CC
+0.5V
-0.5V to +7.0V
PCMCIA Flash Memory Card
FLC Series
Note:
Stress greater than those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional operation
at these or any other conditions greater than those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
DC CHARACTERISTICS
(1)
Symbol
I
CCR
I
CCW
I
CCE
I
CCS
(CMOS)
Parameter
V
CC
Read Current
V
CC
Program Current
V
CC
Erase Current
V
CC
Standby Current
Density
All
All
All
1MB
2MB
4MB
10MB
Notes
Typ
(2)
Max
45
65
65
0.7
0.9
1.3
2.5
Units
mA
mA
mA
mA
Test Conditions
V
CC
= V
CC
max
tcycle = 150ns, CMOS levels
Programming in Progress
Erasure in Progress
V
CC
= V
CC
max
Control Signals = V
CC
CMOS levels
0.015
0.015
0.015
0.015
CMOS Test Conditions: V
CC
= 5V ± 5%, V
IL
= V
SS
± 0.2V, V
IH
= V
CC
± 0.2V
Notes:
1. All currents are RMS values unless otherwise specified. I
CCR
, I
CCW
and I
CCE
are based on Byte wide operations.
For 16 bit operation values are double.
2. Typical: V
CC
= 5V, T = +25°C.
Symbol
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
V
LKO
Parameter
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
CC
Erase/Program Lock Voltage
Notes
1
1
1
1
1
1
1
Min
Max
±20
±20
Units
µA
µA
V
V
V
V
V
Test Conditions
V
CC
= V
CC
MAX
V
IN
=V
CC
or V
SS
V
CC
= V
CC
MAX
V
OUT
=V
CC
or V
SS
0
0.7V
CC
V
CC
-0.4
3.2
0.8
V
CC
+0.5
0.4
V
CC
4.2
I
OL
= 3.2mA
I
OH
= -2.0mA
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage current on CE1#, CE2#, OE#, REG# and WE# will be <500 µA when V
IN
= GND due to internal pull-up resistors.
Auguat 2000
Rev. 3
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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