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2SC1345K

器件型号:2SC1345K
器件类别:分立半导体    晶体管   
文件大小:171KB,共11页
厂商名称:Renesas(瑞萨电子)
厂商官网:https://www.renesas.com/
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器件描述

Silicon NPN Epitaxial

参数
参数名称属性值
厂商名称Renesas(瑞萨电子)
包装说明CYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknown
JEDEC-95代码TO-92
JESD-30 代码O-PBCY-W3
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
认证状态Not Qualified
表面贴装NO
端子形式WIRE
端子位置BOTTOM
Base Number Matches1

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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
2SC1345(K)
Silicon NPN Epitaxial
ADE-208-1053 (Z)
1st. Edition
Mar. 2001
Application
Low frequency low noise amplifier
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1345 (K)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
55
50
5
100
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
55
50
5
250
Note:
D
250 to 500
Typ
2.3
230
Max
0.5
0.5
1200
0.75
0.5
3.5
8
1
V
V
pF
MHz
dB
dB
Unit
V
V
V
µA
µA
Test conditions
I
C
= 10 µA, I
E
= 0
I
C
= 1 mA, R
BE
=
I
E
= 10 µA, I
C
= 0
V
CB
= 18 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 6 V, I
C
= 0.1 mA,
f = 10 Hz, R
g
= 10 kΩ
V
CE
= 6 V, I
C
= 0.1 mA,
f = 1 kHz, R
g
= 10 kΩ
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Collector output capacitance
Gain bandwidth product
Noise figure
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
BE
V
CE(sat)
Cob
f
T
NF
1. The 2SC1345(K) is grouped by h
FE
as follows.
E
400 to 800
F
600 to 1200
2
2SC1345 (K)
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
250
10
Typical Output Characteristics
26
24
22
20
18
16
14
12
10
8
6
4
2
µA
I
B
= 0
P
C
=
20
0
m
200
Collector Current I
C
(mA)
8
W
150
6
100
4
50
2
0
100
150
50
Ambient Temperature Ta (°C)
0
4
8
12
16
20
Collector to Emitter Voltage V
CE
(V)
24
Collector Cutoff Current vs.
Collector to Base Voltage
Typical Transfer Characteristics
5
V
CE
= 12 V
Collector Current I
C
(mA)
4
Collector Cutoff Current
I
CBO
(nA)
30
10
3
1.0
0.3
0.1
0.03
0.01
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
0
10
20
30
40
50
Collector to Base Voltage V
CB
(V)
Ta = 25°C
50
100
100
75
3
2
1
3
与2SC1345K相近的元器件有:2SC1345、2SC1345_01。描述及对比如下:
型号 2SC1345K 2SC1345 2SC1345_01
描述 Silicon NPN Epitaxial Silicon NPN Epitaxial Silicon NPN Epitaxial
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) -
包装说明 CYLINDRICAL, O-PBCY-W3 TO-92(1), 3 PIN -
Reach Compliance Code unknown compliant -
JEDEC-95代码 TO-92 TO-92 -
JESD-30 代码 O-PBCY-W3 O-PBCY-T3 -
端子数量 3 3 -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 ROUND ROUND -
封装形式 CYLINDRICAL CYLINDRICAL -
认证状态 Not Qualified Not Qualified -
表面贴装 NO NO -
端子形式 WIRE THROUGH-HOLE -
端子位置 BOTTOM BOTTOM -
Base Number Matches 1 1 -

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