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BR25H020F-WCE2

器件型号:BR25H020F-WCE2
器件类别:存储    存储   
文件大小:1MB,共32页
厂商名称:ROHM(罗姆半导体)
厂商官网:https://www.rohm.com/
标准:  
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器件描述

EEPROM, 256X8, Serial, CMOS, PDSO8, SOP-8

参数
参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码SOIC
包装说明LSOP, SOP8,.25
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
最大时钟频率 (fCLK)5 MHz
数据保留时间-最小值40
耐久性1000000 Write/Erase Cycles
JESD-30 代码R-PDSO-G8
长度5 mm
内存密度2048 bit
内存集成电路类型EEPROM
内存宽度8
功能数量1
端子数量8
字数256 words
字数代码256
工作模式SYNCHRONOUS
最高工作温度125 °C
最低工作温度-40 °C
组织256X8
封装主体材料PLASTIC/EPOXY
封装代码LSOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE, LOW PROFILE
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
电源3/5 V
认证状态Not Qualified
筛选级别AEC-Q100
座面最大高度1.71 mm
串行总线类型SPI
最大待机电流0.00001 A
最大压摆率0.003 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)2.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度4.4 mm
最长写入周期时间 (tWC)5 ms
写保护HARDWARE
Base Number Matches1

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Datasheet
Automotive Series Serial EEPROMs
125°C SPI BUS ICs
BR25xxxxFamily
BR25Hxxx-WC Series
(1K 2K 4K 8K 16K 32K)
Description
BR25Hxxx-WC series is a serial EEPROM of SPI BUS interface method.
Features
High Speed Clock Action Up to 5MHz (Max)
Wait Function by HOLDB Terminal.
Part or Whole of Memory Arrays Settable as Read
Only Memory Area by Program.
2.5
to
5.5V single power source action most suitable
for battery use.
Page Write Mode Useful for Initial Value Write at
Factory Shipment.
Highly Reliable Connection by Au Pad and Au Wire.
For SPI Bus Interface (CPOL, CPHA)=(0, 0), (1, 1)
Auto Erase and Auto End Function at Data Rewrite.
Low Current Consumption
At Write Action (5V)
: 1.5mA (Typ)
At Read Action (5V)
: 1.0mA (Typ)
At Standby Action (5V) : 0.1µA (Typ)
Address Auto Increment Function at Read Action
Write Mistake Prevention Function
Write Prohibition at Power on.
Write Prohibition by Command Code (WRDI).
Write Prohibition by WPB Pin.
Write Prohibition Block Setting by Status
Registers (BP1, BP0)
Write Mistake Prevention Function at Low
Voltage.
Data at Shipment Memory Array: FFh, Status
Register WPEN, BP1, BP0 : 0
Data Kept for 40 Years.
Data Rewrite Up to 1,000,000 Times.
AEC-Q100 Qualified
Packages
W(Typ) x D(Typ) x H(Max)
SOP8
5.00mm x 6.20mm x 1.71mm
SOP-J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
Page Write
Number of pages
Product Number
16 Byte
BR25H010-WC
BR25H020-WC
BR25H040-WC
32 Byte
BR25H080-WC
BR25H160-WC
BR25H320-WC
BR25Hxxx-WC Series
Capacity
1Kbit
2Kbit
4Kbit
8Kbit
16Kbit
32Kbit
Bit Format
128×8
256×8
512×8
1K×8
2K×8
4Kx8
Type
BR25H010-WC
BR25H020-WC
BR25H040-WC
BR25H080-WC
BR25H160-WC
BR25H320-WC
Power Source Voltage
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
SOP8
SOP-J8
TSSOP-B8
○Product
structure:Silicon monolithic integrated circuit
.
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This
product is not designed protection against radioactive rays
1/29
TSZ02201-0R1R0G100060-1-2
31.Oct.2013 Rev.002
BR25Hxxx-WC Series
(1K 2K 4K 8K 16K 32K)
Datasheet
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Impressed Voltage
Permissible
Dissipation
Storage Temperature Range
Operating Temperature
Range
Terminal Voltage
Symbol
V
CC
Pd
Tstg
Topr
-
Limits
-0.3
to
+6.5
0.56 (SOP8)
0.56 (SOP-J8)
0.41 (TSSOP-B8)
-65
to
+150
-40
to
+125
-0.3
to
V
CC
+0.3
°C
°C
V
W
Unit
V
When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C
When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C
When using at Ta=25°C or higher, 3.3mW to be reduced per 1°C
Remarks
Caution:
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Memory Cell Characteristics
(V
CC
=2.5V
to
5.5V)
Parameter
Limits
Min
1,000,000
Number of Data Rewrite Times
(Note1)
500,000
300,000
Data Hold Years
(Note1)
(Note1) Not 100% TESTED
Typ
-
-
-
-
-
Max
-
-
-
-
-
Unit
Times
Times
Times
Years
Years
Condition
Ta≤85°C
Ta≤105°C
Ta≤125°C
Ta≤25°C
Ta≤125°C
40
20
Recommended Operating Ratings
Parameter
Power Source Voltage
Input Voltage
Symbol
V
CC
V
IN
Limits
2.5
to
5.5
0
to
V
CC
Unit
V
Input / Output Capacity
(Ta=25°C, Frequency=5MHz)
Parameter
Input Capacity
(Note1)
Output Capacity
(Note1)
(Note1) Not 100% TESTED
Symbol
C
IN
C
OUT
Min
-
-
Max
8
8
Unit
pF
V
IN
=GND
V
OUT
=GND
Conditions
Electrical Characteristics
(Unless otherwise specified, Ta=-40°C
to
+125°C, V
CC
=2.5V
to
5.5V)
Parameter
“H” Input Voltage
“L” Input Voltage
“L” Output Voltage
“H” Output Voltage
Input Leak Current
Output Leak Current
Current Consumption at Write
Action
I
CC2
I
CC3
Current Consumption at Read
Action
I
CC4
Standby Current
I
SB
-
-
-
-
2.0
10
mA
µA
-
-
-
-
3.0
1.5
mA
mA
Symbol
V
IH
V
IL
V
OL
V
OH
I
LI
I
LO
I
CC1
Limits
Min
0.7xV
CC
-0.3
0
V
CC
-0.5
-10
-10
-
Typ
-
-
-
-
-
-
-
Max
V
CC
+0.3
0.3xV
CC
0.4
V
CC
10
10
2.0
Unit
V
V
V
V
µA
µA
mA
2.5V≤V
CC
≤5.5V
2.5V≤V
CC
≤5.5V
I
OL
=2.1mA
I
OH
=-0.4mA
V
IN
=0
to
V
CC
V
OUT
=0
to
V
CC
, CSB=V
CC
V
CC
=2.5V, f
SCK
=5MHz, t
E/W
=5ms
V
IH
/V
IL
=0.9V
CC
/0.1V
CC
, SO=OPEN
Byte write, Page write, Write status register
V
CC
=5.5V, f
SCK
=5MHz, t
E/W
=5ms
V
IH
/V
IL
=0.9V
CC
/0.1V
CC
, SO=OPEN
Byte write, Page write, Write status register
V
CC
=2.5V, f
SCK
=5MHz
V
IH
/V
IL
=0.9V
CC
/0.1V
CC
, SO=OPEN
Read, Read status register
V
CC
=5.5V, f
SCK
=5MHz
V
IH
/V
IL
=0.9V
CC
/0.1V
CC
, SO=OPEN
Read, Read status register
V
CC
=5.5V
CSB=HOLDB=WPB=V
CC
, SCK=SI=V
CC
or =GND,
SO=OPEN
Conditions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
2/29
TSZ02201-0R1R0G100060-1-2
31.Oct.2013 Rev.002
BR25Hxxx-WC Series
(1K 2K 4K 8K 16K 32K)
Datasheet
Operating Timing Characteristics
(Ta=-40°C
to
+125°C, unless otherwise specified, load capacity C
L1
=100pF)
Parameter
SCK Frequency
SCK High Time
SCK Low Time
CSB High Time
CSB Setup Time
CSB Hold Time
SCK Setup Time
SCK Hold Time
SI Setup Time
SI Hold Time
Data Output Delay Time1
Data Output Delay Time2 (C
L2
=30pF)
Output Hold Time
Output Disable Time
HOLDB Setting Setup Time
HOLDB Setting Hold Time
HOLDB Release Setup Time
HOLDB Release Old Time
Time from HOLDB to Output High-Z
Time from HOLDB To Output Change
SCK Rise Time
(Note1)
SCK Fall Time
(Note1)
OUTPUT Rise Time
(Note1)
OUTPUT Fall Time
(Note1)
Write Time
(Note1) NOT 100% TESTED
Symbol
f
SCK
t
SCKWH
t
SCKWL
t
CS
t
CSS
t
CSH
t
SCKS
t
SCKH
t
DIS
t
DIH
t
PD1
t
PD2
t
OH
t
OZ
t
HFS
t
HFH
t
HRS
t
HRH
t
HOZ
t
HPD
t
RC
t
FC
t
RO
t
FO
t
E/W
2.5≤V
CC
≤5.5V
Min
-
85
85
85
90
85
90
90
20
30
-
-
0
-
0
40
0
70
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
5
-
-
-
-
-
-
-
-
-
70
55
-
100
-
-
-
-
100
70
1
1
50
50
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ms
Sync Data Input / Output Timing
tCS
tCSS
tCS
CSB
tSCKS
tSCKWL
tSCKWH
tRC
tFC
CSB
SCK
tCSH tSCKH
SCK
tDIS tDIH
SI
SO
High-Z
SI
tPD
tOH
tRO,tFO
tOZ
High-Z
SO
Figure 1. Input Timing
SI is taken into IC inside in sync with data rise
edge of SCK. Input address and data from the
most significant bit MSB.
"H"
Figure 2. Input / Output Timing
SO is output in sync with data fall edge of SCK.
Data is output from the most significant bit MSB.
AC Measurement Conditions
CSB
"L"
tHFS
tHFH
tHRS tHRH
Parameter
tDIS
Symbol
C
L1
C
L2
-
-
-
-
Limits
Min
-
-
-
-
Typ
-
-
-
-
Max
100
30
50
50
Unit
pF
pF
ns
ns
V
V
SCK
Load Capacity 1
n
n-1
SI
n+1
tHOZ
tHPD
High-Z
Dn+1
Dn
Load Capacity 2
Input Rise Time
Input Fall Time
Input Voltage
Input / Output
Judgment Voltage
SO
Dn
Dn-1
HOLDB
0.2V
CC
/0.8V
CC
0.3V
CC
/0.7V
CC
Figure 3. HOLD timing
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
3/29
TSZ02201-0R1R0G100060-1-2
31.Oct.2013 Rev.002
BR25Hxxx-WC Series
Block Diagram
(1K 2K 4K 8K 16K 32K)
Datasheet
CSB
SCK
VOLTAGE
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
(Note1) 7bit: BR25H010-WC
8bit: BR25H020-WC
9bit: BR25H040-WC
10bit: BR25H080-WC
11bit: BR25H160-WC
12bit: BR25H320-WC
DETECTION
SI
HOLDB
INSTRUCTION
REGISTER
ADDRESS
REGISTER
( Note1)
STATUS REGISTER
7½12bit
ADDRESS
DECODER
(Note1)
7½12bit
1½32K
EEPROM
WPB
SO
DATA
REGISTER
8bit
READ/WRITE
AMP
8bit
Figure 4. Block diagram
Pin
Configuration
Vcc
HOLDB SCK
SI
BR25H010-WC
BR25H020-WC
BR25H040-WC
BR25H080-WC
BR25H160-WC
BR25H320-WC
CSB
SO
WPB
GND
Figure 5. Pin
Configuration
Pin Description
Terminal name
V
CC
GND
CSB
SCK
SI
SO
HOLDB
Input/Output
-
-
Input
Input
Input
Output
Input
Function
Power source to be connected
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output
Hold input
Command communications may be suspended temporarily (HOLD
status)
Write protect input
Write command is prohibited
(Note1)
Write status register command is prohibited.
WPB
Input
(Note1) BR25H010/020/040-WC
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
4/29
TSZ02201-0R1R0G100060-1-2
31.Oct.2013 Rev.002
BR25Hxxx-WC Series
Typical Performance Curves
(1K 2K 4K 8K 16K 32K)
Datasheet
Figure 6. “H” Input Voltage vs Supply Voltage
Figure 7. “L” Input Voltage vs Supply Voltage
Figure 8. “L” Output Voltage vs Output Current (Vcc=2.5V)
Figure 9. "H" Output Voltage vs Output Current (Vcc=2.5V)
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/29
TSZ02201-0R1R0G100060-1-2
31.Oct.2013 Rev.002

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