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1N4769A/TR

器件型号:1N4769A/TR
器件类别:半导体    分立半导体    二极管与整流器    稳压二极管   
厂商名称:Microsemi
厂商官网:https://www.microsemi.com
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器件描述

稳压二极管

参数
参数名称属性值
制造商Microsemi
产品种类稳压二极管
RoHSN
Vz - 齐纳电压9.1 V
安装风格Through Hole
封装 / 箱体DO-204AA-2
Pd-功率耗散0.5 W
电压容差5 %
电压温度系数0.0005 %/C
齐纳电流10 uA
Zz - 齐纳阻抗350 Ohms
最小工作温度- 65 C
最大工作温度+ 175 C
配置Single
测试电流0.5 mA
封装Reel
直径2.718 mm
长度7.62 mm
Ir - 反向电流 10 uA
工厂包装数量100

文档预览

1N4765 thru 1N4774A
9.1 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
DESCRIPTION
The 1N4765 thru 1N4774A series of Zero-TC Reference Diodes provides a
selection of 9.1 V nominal voltages and temperature coefficients to as low
as 0.0005%/
o
C for minimal voltage change with temperature when operated
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP respectively for part number
prefixes and high reliability screening. Microsemi also offers numerous
other Zener Reference Diode products for a variety of other voltages from
6.2 V to 200 V
APPEARANCE
WWW .
Microsemi
.C
OM
DO-7
(DO-204AA)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
JEDEC registered 1N935 thru 1N940 series
Standard reference voltage of 9.1V +/- 5%
Internal metallurgical bonds
JANS Equivalent available via SCD
Options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, and
JANS are available by adding MQ, MX, MV, or
MSP prefixes respectively to part numbers. For
example, designate “MX1N4769A” for a JANTX
screen
Radiation Hardened devices available by
changing “1N” prefix to “RH”, e.g. RH4769A, RH
4774A, etc. Also consult factory for “RH” data
sheet brochure for other radiation hardened
reference diode products.
APPLICATIONS / BENEFITS
Provides minimal voltage changes over a broad
temperature range for instrumentation and other
circuit designs requiring a voltage reference
Temperature coefficient selections available
from 0.01%/ºC to 0.0005%/ºC
Tight voltage tolerances available by adding
tolerance 1%, 2%, 3%, etc. after part number for
further identification, e.g. 1N4773A-2%,
1N4774A-1%, 1N4769-3%, 1N4769A-1%, etc.
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
MAXIMUM RATINGS
Operating & StorageTemperature: -65
o
C to
+175
o
C
DC Power Dissipation: 250 mW @ T
L
= 25
o
C
NOTE: For optimum voltage-temperature
stability, the test current I
ZT
= 0.5 or 1.0 mA as
shown in Electrical Characteristics (less than 10
mW in dissipated power)
Solder temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed glass case with
DO-7 (DO-204AA) package
TERMINALS: Tin-lead plated and solderable
per MIL-STD-750, Method 2026
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated
with the banded end positive with respect to the
opposite end
TAPE & REEL option: Standard per EIA-296
(add “TR” suffix to part number)
WEIGHT: 0.2 grams.
See package dimensions on last page
1N4765 – 1N4774A
4765 – 1N4774A
Copyright
2003
8-19-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N4765 thru 1N4774A
9.1 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
*ELECTRICAL CHARACTERISTICS @ 25
o
C
JEDEC
TYPE
NUMBER
ZENER
VOLTAGE
(Note 3)
V
Z
@ I
ZT
VOLTS
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
ZENER
TEST
CURRENT
I
ZT
mA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
DYNAMIC
IMPEDANCE
Z
ZT
OHMS
350
350
350
350
350
350
350
350
350
350
200
200
200
200
200
200
200
200
200
200
MAXIMUM
REVERSE
CURRENT
I
R
@ 6 V
I
R
µA
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
MAXIMUM
VOLTAGE
TEMPERATURE
STABILITY
(Note 2 & 3)
∆V
ZT
mV
68
141
34
70
14
28
7
14
3
7
68
141
34
70
14
28
7
14
3
7
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COMPENSIATIONS
α
VZ
%/ C
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.005
0.005
o
WWW .
Microsemi
.C
OM
1N4765
1N4765A
1N4766
1N4766A
1N4767
1N4767A
1N4768
1N4768A
1N4769
1N4769A
1N4770
1N4770A
1N4771
1N4771A
1N4772
1N4772A
1N4773
1N4773A
1N4774
1N4774A
C
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
o
*JEDEC Registered Data.
NOTES:
1.
2.
3.
4.
5.
Measured by superimposing I
Z
ac rms on I
Z
dc @ +25
o
C where I
Z
ac rms = 10% I
Z
dc.
Maximum allowable change between any two discrete temperatures over the specified temperature range.
Voltage measurements to be performed 15 seconds after application of dc current.
Designate Radiation Hardened devices with “RH” prefix instead of “1N”, i.e., RH4774A.
Consult factory for TX, TXV or JANS equivalent SCDs.
PACKAGE DIMENSIONS
1N4765 – 1N4774A
All dimensions in:
INCH
mm
Copyright
2003
8-19-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Microsemi
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1N4766A CDLL4765A/TR CDLL4771/TR CDLL4768A/TR CDLL4766A/TR CDLL4765/TR CDLL4774A/TR
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CDLL4768/TR CDLL4767A/TR CDLL4767/TR CDLL4773A/TR CDLL4772/TR CDLL4770A/TR CDLL4766/TR
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