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EGF1B-1HE3/5CA

器件型号:EGF1B-1HE3/5CA
器件类别:半导体    分立半导体   
文件大小:90KB,共4页
厂商名称:Vishay(威世)
厂商官网:http://www.vishay.com
标准:
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器件描述

DIODE GEN PURP 100V 1A DO214BA

参数
参数名称属性值
二极管类型标准
电压 - DC 反向(Vr)(最大值)100V
电流 - 平均整流(Io)1A
不同 If 时的电压 - 正向(Vf1V @ 1A
速度快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr)50ns
不同 Vr 时的电流 - 反向漏电流5µA @ 100V
不同 Vr,F 时的电容15pF @ 4V,1MHz
安装类型表面贴装
封装/外壳DO-214BA
供应商器件封装DO-214BA(GF1)
工作温度 - 结-65°C ~ 175°C

文档预览

EGF1A, EGF1B, EGF1C, EGF1D
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Ultrafast Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
Superectifier
®
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
GF1 (DO-214BA)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variations
1.0 A
50 V, 100 V, 150 V, 200 V
30 A
50 ns
1.0 V
175 °C
GF1 (DO-214BA)
Single
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case:
GF1 (DO-214BA), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 125 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
EGF1A
EA
50
35
50
EGF1B
EB
100
70
100
1.0
30
-65 to +175
EGF1C
EC
150
105
150
EGF1D
ED
200
140
200
V
V
V
A
A
°C
UNIT
Revision: 25-Aug-17
Document Number: 88579
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
EGF1A, EGF1B, EGF1C, EGF1D
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
TEST CONDITIONS
1.0 A
T
A
= 25 °C
T
A
= 125 °C
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
SYMBOL
V
F (1)
I
R (1)
t
rr
C
J
EGF1A
EGF1B
1.0
5.0
50
50
15
EGF1C
EGF1D
UNIT
V
μA
ns
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JL
(1)
EGF1A
EGF1B
85
30
EGF1C
EGF1D
UNIT
°C/W
(1)
Note
Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION
(Example)
PREFERRED P/N
EGF1D-E3/67A
EGF1D-E3/5CA
EGF1DHE3_A/I
(1)
UNIT WEIGHT (g)
0.104
0.104
0.104
PREFERRED PACKAGE CODE
67A
5CA
I
BASE QUANTITY
1500
6500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C
unless otherwise specified)
1.0
30
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
25
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
20
0.5
15
10
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
0
25
50
75
100
125
150
175
5
0
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 25-Aug-17
Document Number: 88579
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
EGF1A, EGF1B, EGF1C, EGF1D
www.vishay.com
Vishay General Semiconductor
70
60
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
Instantaneous Forward Current (A)
10
T
J
= 150 °C
1
T
J
= 25 °C
Junction Capacitance (pF)
1.8
50
40
30
20
10
0
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
100
100
T
J
= 150 °C
10
T
J
= 100 °C
Transient Thermal Impedance (°C/W)
80
100
Instantaneous Reverse Leakage
Current (µA)
10
1
1
0.1
T
J
= 25 °C
0.01
0
20
40
60
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
GF1
(DO-214BA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
0.040 (1.02)
0.066 (1.68)
MIN.
0.076 (1.93)
MAX.
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
0.060 (1.52)
MIN.
0.118 (3.00)
0.100 (2.54)
0.108 (2.74)
0.098 (2.49)
0.220 (5.58)
REF.
0.060 (1.52)
0.030 (0.76)
0.006 (0.152) TYP.
0.226 (5.74)
0.196 (4.98)
0.114 (2.90)
0.094 (2.39)
Revision: 25-Aug-17
Document Number: 88579
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
与EGF1B-1HE3/5CA相近的元器件有:EGF1B-1HE3/67A、EGF1D-2HE3/67A。描述及对比如下:
型号 EGF1B-1HE3/5CA EGF1B-1HE3/67A EGF1D-2HE3/67A
描述 DIODE GEN PURP 100V 1A DO214BA DIODE GEN PURP 100V 1A DO214BA DIODE GEN PURP 200V 1A DO214BA
二极管类型 标准 标准 标准
电压 - DC 反向(Vr)(最大值) 100V 100V 200V
电流 - 平均整流(Io) 1A 1A 1A
不同 If 时的电压 - 正向(Vf 1V @ 1A 1V @ 1A 1V @ 1A
速度 快速恢复 =< 500 ns,> 200mA(Io) 快速恢复 =< 500 ns,> 200mA(Io) 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr) 50ns 50ns 50ns
不同 Vr 时的电流 - 反向漏电流 5µA @ 100V 5µA @ 100V 5µA @ 200V
不同 Vr,F 时的电容 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz
安装类型 表面贴装 表面贴装 表面贴装
封装/外壳 DO-214BA DO-214BA DO-214BA
供应商器件封装 DO-214BA(GF1) DO-214BA(GF1) DO-214BA(GF1)
工作温度 - 结 -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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