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EN29LV640L-90TI

器件型号:EN29LV640L-90TI
器件类别:存储    存储   
文件大小:443KB,共45页
厂商名称:Eon
厂商官网:http://www.essi.com.tw/
下载文档

器件描述

64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory

参数
参数名称属性值
是否Rohs认证不符合
厂商名称Eon
包装说明TSSOP, TSSOP48,.8,20
Reach Compliance Codeunknow
最长访问时间90 ns
命令用户界面YES
通用闪存接口YES
数据轮询YES
JESD-30 代码R-PDSO-G48
JESD-609代码e0
内存密度67108864 bi
内存集成电路类型FLASH
内存宽度16
部门数/规模128
端子数量48
字数4194304 words
字数代码4000000
最高工作温度85 °C
最低工作温度-40 °C
组织4MX16
封装主体材料PLASTIC/EPOXY
封装代码TSSOP
封装等效代码TSSOP48,.8,20
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行PARALLEL
电源3/3.3 V
认证状态Not Qualified
就绪/忙碌YES
部门规模32K
最大待机电流0.000005 A
最大压摆率0.03 mA
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
切换位YES
类型NOR TYPE

文档预览

EN29LV640
EN29LV640
64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only,
Uniform Sector Flash Memory
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts for read,
erase and program operations
Low power cons
umption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
μA
current in standby or automatic
sleep mode.
Software features:
Sector Group Protection
- Provide locking of sectors to prevent program
or erase operations within individual sectors
- Additionally, temporary Sector Group
Unprotect allows code changes in previously
protected sectors.
Standard DATA# polling and toggle bits
feature
Unlock Bypass Program command supported
Sector Erase Suspend / Resume modes:
Read and program another Sector during
Sector Erase Suspend Mode
Support JEDEC Common Flash Interface
(CFI).
Hardware features:
Pin compatible to lower density, easy
replacement for code expansion.
RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
WP#/ACC input pin
- Write Protect (WP#) function allows
protection of first or last 32K-word sector,
regardless of previous sector protect status
- Acceleration (ACC) function provides
accelerated program times
JEDEC standards compatible
- Pinout and software compatible with single-
power supply Flash standard
Manufactured on 0.18μm process
technology
Flexible Sector Architecture:
- One hundred and twenty-eight 32K-Word /
64K-byte sectors.
Minimum 100K program/erase endurance
cycles.
-
-
-
High performance for program and erase
Word program time: 8µs typical
Sector Erase time: 500ms typical
Chip Erase time: 64s typical
Package Options
- 48-pin TSOP
- 48-ball FBGA
GENERAL DESCRIPTION
The EN29LV640H/L / EN29LV640U is a 64-Megabit ( 4Mx16 ), electrically erasable, read/write non-
volatile flash memory. Any word can be programmed typically in 8µs. This device is entirely
command set compatible with the JEDEC single-power-supply Flash standard.
The EN29LV640H/L / EN29LV640U is designed to allow either single Sector or full Chip erase
operation, where each Sector Group can be protected against program/erase operations or
temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2007/01/23
EN29LV640
PRODUCT SELECTOR GUIDE
Product Number
Speed Option
Full Voltage Range: V
CC
=2.7 – 3.6 V
EN29LV640H/L
90
90
90
35
EN29LV640U
90
90
90
35
Max Access Time (ns)
Max CE# Access Time (ns)
Max OE# Access Time (ns)
BLOCK DIAGRAM
V
CC
V
SS
RESET#
State
Control
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB
RY/BY#
Sector Protect Switches
DQ15-DQ0
Erase Voltage Generator
Input/Output Buffers
WE#
WP#/
ACC
CE#
OE#
Command
Register
Data Latch
Y-Decoder
Address Latch
STB
Y-Gating
V
CC
Detector
Timer
X-Decoder
Cell Matrix
A21-A0
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2007/01/23
EN29LV640
CONNECTION DIAGRAMS
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2007/01/23
EN29LV640
TABLE 1. PIN DESCRIPTION
LOGIC DIAGRAM
Pin Name
A21-A0
DQ15-DQ0
CE#
OE#
WE#
WP#/ACC
RY/BY#
RESET#
V
cc
V
ss
NC
Function
22 Address inputs
16 Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Write Protect / Acceleration Pin
Ready/Busy status output
Hardware Reset Input Pin
Supply Voltage (2.7-3.6V)
Ground
Not Connected to anything
RESET#
WP# / ACC
RY/BY#
A21 – A0
CE#
OE#
WE#
DQ15 – DQ0
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2007/01/23
EN29LV640
ORDERING INFORMATION
EN29LV640
H
90
T
C
P
PACKAGING CONTENT
(Blank) = Conventional
P = Pb Free
TEMPERATURE RANGE
I = Industrial (-40°C to +85°C)
C = Commercial (0°C to +70°C)
PACKAGE
T = 48-pin TSOP
B = 48-Ball Fine Pitch Ball Grid Array (FBGA)
0.80mm pitch
SPEED OPTION
See Product Selector Guide and Valid Combinations
SECTOR for WRITE PROTECT (WP#/ACC=0)
H = highest address sector protected
L = lowest address sector protected
BASE PART NUMBER
EN29LV640 / EN29LV640U
64 Megabit(4M x 16-Bit) Uniform Sector Flash
3V Read, Erase and Program
PRODUCT SELECTOR GUIDE
Valid Combinations
EN29LV640H–90
EN29LV640L–90
TI, TC
BI,BC
Vcc
V
cc
= 2.7V-3.6V
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2007/01/23
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