E S I
I
ES
Excel Semiconductor inc.
ES29LV800E
8Mbit(1M x 8/512K x 16)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
GENERAL FEATURES
• Single power supply operation
- 2.7V -3.6V for read, program and erase operations
• Minimum 100,000 program/erase cycles per sector
• 20 Year data retention at 125
o
C
SOFTWARE FEATURES
• Sector Structure
- 16Kbyte x 1, 8Kbyte x 2, 32Kbyte x 1 boot sectors
- 64Kbyte x 15sectors
• Top or Bottom boot block
- ES29LV800ET for Top boot block device
- ES29LV800EB for Bottom boot block device
• Package Options
- 48-pin TSOP
- 48-ball FBGA ( 6 x 8 mm )
- Pb-free packages
- All Pb-free products are RoHS-Compliant
• Low Vcc write inhibit
• Manufactured on 0.18um process technology
• Compatible with JEDEC standards
- Pinout and software compatible with single-power
supply flash standard
•
•
•
•
•
Erase Suspend / Erase Resume
Data# poll and toggle for Program/erase status
Unlock Bypass program
Autoselect mode
Auto-sleep mode after t
ACC
+ 30ns
HARDWARE FEATURES
• Hardware reset input pin ( RESET#)
- Provides a hardware reset to device
- Any internal device operation is terminated and the
device returns to read mode by the reset
• Ready/Busy# output pin ( RY/BY#)
- Provides a program or erase operational status
about whether it is finished for read or still being
progressed
• Sector protection / unprotection ( RESET# , A9 )
- Hardware method of locking a sector to prevent
any program or erase operation within that sector
- Two methods are provided :
- In-system method by RESET# pin
- A9 high-voltage method for PROM programmers
• Temporary Sector Unprotection ( RESET# )
- Allows temporary unprotection of previously
protected sectors to change data in-system
DEVICE PERFORMANCE
• Read access time
- 70ns / 90ns / 120ns
• Program and erase time
- Program time : 6us/byte, 8us/word ( typical )
- Sector erase time : 0.7sec/sector ( typical )
• Power consumption (typical values)
- 200nA in standby or automatic sleep mode
- 7mA active read current at 5 MHz
- 15mA active write current during program or erase
ES29LV800E
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Rev. 0A January 5, 2006
E S I
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Excel Semiconductor inc.
GENERAL PRODUCT DESCRIPTION
The ES29LV800 is a 8 megabit, 3.0 volt-only flash
memory device, organized as 1M x 8 bits (Byte
mode) or 512K x 16 bits (Word mode) which is con-
figurable by BYTE#. Four boot sectors and fifteen
main sectors are provided : 16Kbytes x 1, 8Kbytes
x 2, 32Kbytes x 1 and 64Kbytes x 15. The device is
manufactured with ESI’s proprietary, high perfor-
mance and highly reliable 0.18um CMOS flash
technology. The device can be programmed or
erased in-system with standard 3.0 Volt Vcc supply
( 2.7V-3.6V) and can also be programmed in stan-
dard EPROM programmers. The device offers min-
imum endurance of 100,000 program/erase cycles
and more than 10 years of data retention.
The ES29LV800 offers access time as fast as 70ns
or 90ns, allowing operation of high-speed micropro-
cessors without wait states. Three separate control
pins are provided to eliminate bus contention : chip
enable (CE#), write enable (WE#) and output
enable (OE#).
All program and erase operation are automatically
and internally performed and controlled by embed-
ded program/erase algorithms built in the device.
The device automatically generates and times the
necessary high-voltage pulses to be applied to the
cells, performs the verification, and counts the num-
ber of sequences. Some status bits (DQ7, DQ6 and
DQ5) read by data# polling or toggling between
consecutive read cycles provide to the users the
internal status of program/erase operation: whether
it is successfully done or still being progressed.
The ES29LV800 is completely compatible with the
JEDEC standard command set of single power sup-
ply Flash. Commands are written to the internal
command register using standard write timings of
microprocessor and data can be read out from the
cell array in the device with the same way as used in
other EPROM or flash devices.
ES29LV800E
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Rev. 0A January 5, 2006
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Excel Semiconductor inc.
PRODUCT SELECTOR GUIDE
Family Part Number
Voltage Range
Speed Option
Max Access Time (ns)
CE# Access (ns)
OE# Access (ns)
70
70
70
30
ES29LV800
2.7 ~ 3.6V
90
90
90
35
120
120
120
50
FUNCTION BLOCK DIAGRAM
RY/BY#
Vcc
Vss
Vcc Detector
Timer/
Counter
DQ0-DQ15(A-1)
Analog Bias
Generator
WE
#
RESET#
Command
Register
Write
State
Machine
Input/Output
Buffers
Sector Switches
Data Latch/
Sense Amps
Y-Decoder
A<0:18>
Y-Decoder
Address Latch
CE#
OE#
BYTE#
X-Decoder
Cell Array
Chip Enable
Output Enable
Logic
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Excel Semiconductor inc.
PIN DESCRIPTION
Pin
A0-A18
DQ0-DQ14
DQ15/A-1
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
Vcc
Vss
NC
19 Addresses
15 Data Inputs/Outputs
DQ15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Chip Enable
Output Enable
Write Enable
Hardware Reset Pin, Active Low
Selects 8-bit or 16-bit mode
Ready/Busy Output
3.0 volt-only single power supply
(see Product Selector Guide for speed options and voltage supply tolerances)
Device Ground
Pin Not Connected Internally
Description
LOGIC SYMBOL
19
A0 ~ A18
DQ0 ~ DQ15
(A-1)
16 or 8
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
ES29LV800E
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Rev. 0A January 5, 2006
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Excel Semiconductor inc.
CONNECTION DIAGRAM
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-Pin Standard TSOP
ES29LV800
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
48-Ball FBGA (6 x 8 mm)
(Top View, Balls Facing Down)
A
B
C
D
E
F
G
H
6
A13
A12
A14
A15
A16
BYTE#
DQ15/
A-1
Vss
5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
4
WE#
RESET#
NC
NC
DQ5
DQ12
Vcc
DQ4
3
RY/
BY#
NC
A18
NC
DQ2
DQ10
DQ11
DQ3
2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
1
A3
A4
A2
A1
A0
CE#
OE#
Vss
ES29LV800E
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Rev. 0A January 5, 2006
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