电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SI7848DP-T1

器件型号:SI7848DP-T1
器件类别:分立半导体    晶体管   
文件大小:78KB,共5页
厂商名称:Vishay(威世)
厂商官网:http://www.vishay.com
下载文档

SI7848DP-T1在线购买

供应商 器件名称 价格 最低购买 库存  
SI7848DP-T1 - - 点击查看 点击购买

器件描述

MOSFET 40V 17A 5W

参数
参数名称属性值
是否Rohs认证不符合
厂商名称Vishay(威世)
包装说明,
Reach Compliance Codecompliant

文档预览

Si7848DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
40
r
DS(on)
(Ω)
0.009 at V
GS
= 10 V
0.012 at V
GS
= 4.5 V
I
D
(A)
17
15
FEATURES
• TrenchFET
®
Power MOSFETS
• New Low Thermal Resistance
PowerPAK
®
Package with Low 1.07-mm
Profile
• PWM Optimized for Fast Switching
• 100 % R
g
Tested
Pb-free
Available
RoHS*
COMPLIANT
PowerPAK SO-8
APPLICATIONS
• DC/DC Converters
- Synchronous Buck
- Synchronous Rectifier
D
6.15 mm
S
1
2
3
S
S
5.15 mm
G
4
D
8
7
6
5
D
D
D
G
Bottom View
S
Ordering Information:
Si7848DP-T1
Si7848DP-T1—E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b,c
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
I
S
P
D
T
J
, T
stg
10 secs
Steady State
40
± 20
17
13.7
50
30
4.5
5
3.2
– 55 to 150
260
1.67
1.83
1.2
W
°C
10.4
8.3
Unit
V
A
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
t
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
20
55
1.8
Maximum
25
68
2.2
Unit
°C/W
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71450
S-52554-Rev. D, 19-Dec-05
www.vishay.com
1
Si7848DP
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.8 A, di/dt = 100 A/µs
V
DD
= 20 V, R
L
= 20
Ω
I
D
1 A, V
GEN
= 10 V, R
G
= 6
Ω
0.1
V
DS
= 20 V, V
GS
= 5 V, I
D
= 14 A
18.5
6
7.5
0.8
15
10
50
20
30
1.1
30
20
100
40
60
ns
Ω
28
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 14 A
V
GS
= 4.5 V, I
D
= 12 A
V
DS
= 15 V, I
D
= 14 A
I
S
= 2.8 A, V
GS
= 0 V
50
0.0075
0.0095
50
0.75
1.1
0.009
0.012
1.0
3.0
± 100
1
5
µA
A
Ω
S
V
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Notes
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless noted
50
V
GS
= 10 thru 4 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
40
50
30
3V
20
30
20
T
C
= 125 °C
10
25 °C
10
2 thru 0 V
0
0
1
2
3
4
5
6
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 71450
S-52554-Rev. D, 19-Dec-05
Si7848DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
0.020
r
DS(on)
- On-Resistance (
Ω
)
25 °C, unless noted
3000
C - Capacitance (pF)
0.016
2500
C
iss
2000
0.012
V
GS
= 4.5 V
0.008
V
GS
= 10 V
1500
1000
C
oss
C
rss
0.004
500
0.000
0
10
20
30
40
50
0
0
8
16
24
32
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 20 V
I
D
= 14 A
8
r
DS(on)
- On-Resistance
(Normalized)
1.6
2.0
V
GS
= 10 V
I
D
= 14 A
Capacitance
6
1.2
4
0.8
2
0.4
0
0
7
14
21
28
35
Q
g
- Total Gate Charge (nC)
0.0
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
0.04
T
J
= 150 °C
I
S
- Source Current (A)
On-Resistance vs. Junction Temperature
50
r
DS(on)
- On-Resistance (
Ω
)
I
D
= 14 A
0.03
10
0.02
T
J
= 25 °C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71450
S-52554-Rev. D, 19-Dec-05
www.vishay.com
3
Si7848DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless noted
0.6
0.4
0.2
V
GS(th)
Variance (V)
0.0
- 0.2
- 0.4
- 0.6
20
- 0.8
- 1.0
- 50
0
0.001
I
D
= 250
μA
Power (W)
- 25
0
25
50
75
100
125
150
80
100
60
40
0.01
T
J
- Temperature (°C)
0.1
Time (sec)
1
10
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 55 °C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
http://www.vishay.com/ppg?71450.
www.vishay.com
4
Document Number: 71450
S-52554-Rev. D, 19-Dec-05
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
现场抽取PS5等诸多好礼 SiFive RISC-V 中国技术论坛报名中!
2023 SiFive RISC-V 中国技术论坛三城(上海/北京/深圳)巡讲线下活动开放报名!RISCV 主要发明人、SiFive 共同创办人兼首席架构师 Krste Asanović 教授与 SiFive 执行高层 Jack Kang (刚至坚) 将亲临现场,畅聊全球 RISC-V 趋势与 RISC-V 在中国半导体行业的发展。谷歌、三星、高通...
EEWORLD社区 综合技术交流
最新储能新闻分享~~
1、《光伏电站储能系统配置技术规范》征求意见5月30日,新疆维吾尔自治区市场监督管理局发布《光伏电站储能系统配置技术规范》征求意见稿,针对储能系统技术要求,提出锂离子电池储能系统能量转换效率不应低于92%,铅炭电池储能系统能量转换效率不应低于86%,液流电池储能系统能量转换效率不应低于65%。2、6月第一周,超过600MWh储能项目进入并网投运/在建状态。青...
okhxyyo 电源技术
PCB多层电路板为什么大多数是偶数层
PCB多层电路板为什么大多数是偶数层PCB线路板有单面、双面和多层的,其中多层板的层数不限,目前已经有超过100层的PCB,而常见的多层PCB是四层和六层板。那为何PCB多层板为什么都是偶数层?相对来说,偶数层的PCB线路板确实要多于奇数层的PCB线路板,也更有优势。1、成本较低因为少一层介质和敷箔,奇数PCB板原材料的成本略低于偶数层PCB。但是奇数层PC...
瑞兴诺pcb PCB设计
带你了解 Vicor 汽车48V供电解决方案
加速汽车电气化汽车 OEM 制造商正在制定积极的目标,在未来 5-10 年内使其车队电气化。要做到这一点,他们需要克服障碍,更重要的是如何在不占用宝贵的封装空间和增加重量的情况下,提供现有燃油车(ICE)近 20 倍的电力。他们需要确保每辆电动汽车都与公路沿线的直流快速充电站兼容,以消除里程焦虑。他们需要向消费者展示电动汽车拥有燃油车所有的舒适性、安全性以及...
eric_wang 汽车电子
某鱼买了一个小热成像传感器
这个SMH-01B01-01传感器是日本NPC生产的一款8*8点阵测温传感器模块,NPC看手册好像是精工的,板子上有一颗PIC单片机,把模块信号转找成I2C输出。8*8还有日本的AMG8833,不过SMH-01B01-01的镜头看起来要比AMG8833好很多。产品页面有一些应用介绍SMH-01B01 [Infrared Array Sensor Module...
littleshrimp 传感器
测评汇总:雅特力AT-START-F435和AT-START-F437
活动详情:【雅特力AT-START-F435和AT-START-F437】更新至 2023-06-04测评报告汇总:@宜城龙山 【雅特力AT-START-F435开发板试用】1-构建RTT-Stdio开发环境@caizhiwei 【雅特力AT-START-F437评测】3. 通过HTTP给设备升级【雅特力AT-START-F437评测】2.QSPI Flas...
EEWORLD社区 测评中心专版

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2023 EEWORLD.com.cn, Inc. All rights reserved